High electron mobility lattice-matched AlInN∕GaN field-effect transistor heterostructures

Gonschorek, M.; Carlin, J.-F.; Feltin, E.; Py, M.A.; Grandjean, N.

doi:10.1063/1.2335390

Cited by 318 publications

(248 citation statements)

References 14 publications

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“…A thin AlN interlayer between the GaN buffer and the quaternary barrier layer was grown under barrier reactor conditions at about 825°C in all heterostructures to enhance the carrier mobility in the HEMT structures. 7,12 The AlInGaN/ GaN heterostructures of sample series 1 were capped with a thin (12 nm to 36 nm) GaN film for process-relevant issues, as reviewed elsewhere. 8 Rutherford backscattering spectrometry (RBS) using 1.4-MeV He + ions at scattering angle of 170°w as performed to acquire reliable information about the AlInGaN thickness and the exact depthresolved composition.…”

Section: Growth Conditions and Characterization Methodsmentioning

confidence: 99%

“…4,5 Tensilestrained AlInGaN layers with high Al contents and lattice-matched pure AlInN both generate high twodimensional electron gas (2DEG) densities. 6,7 Compressively strained AlInN and AlInGaN layers have been used to generate a piezoelectric polarization which compensates a high spontaneous polarization to lower the 2DEG density and realize e-mode operation. 8,9 However, device performance is limited by the inferior crystal quality caused by the high In content.…”

Section: Introductionmentioning

confidence: 99%

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Polarization-Engineered Enhancement-Mode High-Electron-Mobility Transistors Using Quaternary AlInGaN Barrier Layers

Reuters

Wille

Ketteniss

et al. 2013

Journal of Elec Materi

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Group III nitride heterostructures with low polarization difference recently moved into the focus of research for realization of enhancement-mode (e-mode) transistors. Quaternary AlInGaN layers as barriers in GaN-based high-electron-mobility transistors (HEMTs) offer the possibility to perform polarization engineering, which allows control of the threshold voltage over a wide range from negative to positive values by changing the composition and strain state of the barrier. Tensile-strained AlInGaN layers with high Al contents generate high two-dimensional electron gas (2DEG) densities, due to the large spontaneous polarization and the contributing piezoelectric polarization. To lower the 2DEG density for e-mode HEMT operation, the polarization difference between the barrier and the GaN buffer has to be reduced. Here, two different concepts are discussed. The first is to generate compressive strain with layers having high In contents in order to induce a positive piezoelectric polarization compensating the large negative spontaneous polarization. Another novel approach is a lattice-matched Ga-rich AlInGaN/GaN heterostructure with low spontaneous polarization and improved crystal quality as strain-related effects are eliminated. Both concepts for e-mode HEMTs are presented and compared in terms of electrical performance and structural properties.

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Section: Growth Conditions and Characterization Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Polarization-Engineered Enhancement-Mode High-Electron-Mobility Transistors Using Quaternary AlInGaN Barrier Layers

Reuters

Wille

Ketteniss

et al. 2013

Journal of Elec Materi

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“…It would allow for structures that are both polarization balanced and lattice matched (or the more relaxed strain-balance condition), for instance, by combining Al 82 In 18 N and GaN. 46,47 Since strain is zero, we balance only the spontaneous part of the polarization.…”

Section: B Prospects and Challengesmentioning

confidence: 99%

Polarization-balanced design of heterostructures: Application to AlN/GaN double-barrier structures

2011

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Inversion and depletion regions generally form at the interfaces between doped leads (cladding layers) and the active region of polar heterostructures like AlN/GaN and other nitride compounds. The band bending in the depletion region sets up a barrier that may seriously impede perpendicular electronic transport. This may ruin the performance of devices such as quantum-cascade lasers and resonant-tunneling diodes. Here we introduce the concepts of polarization balance and polarization-balanced designs: A structure is polarization balanced when the applied bias match the voltage drop arising from spontaneous and piezeolectric fields. Devices designed to operate at this bias have polarization-balanced designs. These concepts offer a systematic approach to avoid the formation of depletion regions. As a test case, we consider the design of AlN/GaN double-barrier structures with AlxGa 1−x N leads. To guide our efforts, we derive a simple relation between the intrinsic voltage drop arising from polar effects, average alloy composition of the active region, and the alloy concentration of the leads. Polarization-balanced designs secure good filling of the ground state for unbiased structures, while for biased structures with efficient emptying of the active region they remove the depletion barriers.

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“…HEMTs with nearly lattice matched AlInN barrier layers were essentially predicted to provide higher carrier densities than in those with an AlGaN barrier layer [8], which is promising for high power and high frequency transistor operations [14]. Gonschorek et al [10] reported a high density of carriers (2.6 × 10 13 cm − 2 ) with the electron mobility of 1170 cm 2 /Vs resulting in a low sheet resistance of 210 Ω/sq at room temperature (RT) for an AlInN/GaN heterostructure. Similarly, Tulek et al [14] reported a very high electron density of 4.23 × 10 13 cm −2 with a corresponding electron mobility of 812 cm 2 /Vs which yielded a record two-dimensional sheet resistance of 182 Ω/sq for heterostructure with an Al 0.88 In 0.12 N barrier layer.…”

Section: Introductionmentioning

confidence: 99%

“…Many studies have been performed to improve the performance of devices, such as increasing the Al composition of an AlGaN barrier [2], using a thin AlN spacer layer at the AlGaN/GaN interface [3,4], and replacing the GaN with InGaN as the channel [5,6] and AlGaN with AlInN [7][8][9][10][11][12][13][14][15][16] as the barrier. Among these, the lattice-matched AlInN barrier is considered to be the most promising barrier alternative for improving the HEMT performance.…”

Section: Introductionmentioning

confidence: 99%

The effect of GaN thickness inserted between two AlN layers on the transport properties of a lattice matched AlInN/AlN/GaN/AlN/GaN double channel heterostructure

et al. 2014

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One AlInN/AlN/GaN single channel heterostructure sample and four AlInN/AlN/GaN/AlN/GaN double channel heterostructure samples with different values of the second GaN layer were studied. The interface profiles, crystalline qualities, surface morphologies, and dislocation densities of the samples were investigated using high resolution transmission electron microscopy, atomic force microscopy, and high-resolution X-ray diffraction. Some of the data provided by these measurements were used as input parameters in the calculation of the scattering mechanisms that govern the transport properties of the studied samples. Experimental transport data were obtained using temperature dependent Hall effect measurements (10-300 K) at low (0.5 T) and high (8 T) magnetic fields to exclude the bulk transport from the two-dimensional one. The effect of the thickness of the second GaN layer inserted between two AlN barrier layers on mobility and carrier concentrations was analyzed and the dominant scattering mechanisms in the low and high temperature regimes were determined. It was found that Hall mobility increases as the thickness of GaN increases until 5 nm at a low temperature where interface roughness scattering is observed as one of the dominant scattering mechanisms. When GaN thicknesses exceed 5 nm, Hall mobility tends to decrease again due to the population of the second channel in which the interface becomes worse compared to the other one. From these analyses, 5 nm GaN layer thicknesses were found to be the optimum thicknesses required for high electron mobility.

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High electron mobility lattice-matched AlInN∕GaN field-effect transistor heterostructures

Cited by 318 publications

References 14 publications

Polarization-Engineered Enhancement-Mode High-Electron-Mobility Transistors Using Quaternary AlInGaN Barrier Layers

Polarization-Engineered Enhancement-Mode High-Electron-Mobility Transistors Using Quaternary AlInGaN Barrier Layers

Polarization-balanced design of heterostructures: Application to AlN/GaN double-barrier structures

The effect of GaN thickness inserted between two AlN layers on the transport properties of a lattice matched AlInN/AlN/GaN/AlN/GaN double channel heterostructure

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