High electron mobility in nearly-dislocation-free hexagonal InN

Chen, Ling; Sheng, Shanshan; Sheng, Bowen; Wang, Tao; Yang, Liuyun; Zhang, Baoqing; Yang, Jiajia; Zheng, Xiantong; Chen, Zhaoying; Wang, Ping; Ge, Weikun; Shen, Bo; Wang, Xinqiang

doi:10.35848/1882-0786/ac4449

Cited by 4 publications

(5 citation statements)

References 35 publications

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“…5,13,17 In solar cells, this feature is also relevant to enable the utilization of a wider range of the solar emission spectrum to generate electricity. [6][7][8][9] Moreover, the high value predicted (4400 -14000 cm 2 V -1 s -1 ) [18][19][20] and experimentally measured (3640-4850 cm 2 V −1 s −1 ) 12,21 for electron mobility constitute a key property for the future use in electronic devices.…”

Section: -Introductionmentioning

confidence: 93%

“…Tables 1 and 2 summarize the thermokinetic data obtained for the reaction pathways described previously by Eq. (7)(8)(9)(10)(11)(12)(13)(14), as calculated at p= 1 bar and different temperature conditions. In Subsection 2.1.1, it is first discussed the choice of theory level for the theoretical calculations.…”

Section: 1-trimethylindiummentioning

confidence: 99%

“…In the past decades, the wurtzite form of indium nitride (InN) has been widely investigated for a vast set of applications, such as light-emitting diodes (LEDs) [1][2][3][4][5] , solar cells [6][7][8][9] and high-speed electronics [10][11][12] . In particular, the major revision in its band gap in 2002, from 1.9 to ~ 0.7 eV, [12][13][14][15][16] has triggered the interest for its incorporation to the metal alloys from group-III nitrides, in which the light emission could be broadened from the ultraviolet to the near-infrared spectral region in LEDs and lasers. 5,13,17 In solar cells, this feature is also relevant to enable the utilization of a wider range of the solar emission spectrum to generate electricity.…”

Section: -Introductionmentioning

confidence: 99%

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Thermal Decomposition of Trimethylindium and Indium Trisguanidinate Precursors for InN Growth: An Ab-Initio and Kinetic Modelling Study

Damas¹,

Rönnby

Pedersen

et al. 2023

Preprint

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Indium nitride (InN) is an interesting material for future electronic and photonic-related applications, as it combines high electron mobility and low-energy band gap for photoabsorption or emission-driven processes. In this context, atomic layer deposition (ALD) techniques have been previously employed for InN growth at low temperatures (typically < 350 C), reportedly yielding crystals with high quality and purity. In general, this technique is assumed to not involve any gas phase reactions as a result from the time-resolved insertion of volatile molecular sources into the gas chamber. Nonetheless, such temperatures could still favour the precursor decomposition in gas phase during the In half-cycle, therefore altering the molecular species that undergoes physisorption and, ultimately, driving the reaction mechanism to pursue other pathways. Thence, we herein evaluate the thermal decomposition of relevant In precursors in gas phase, namely trimethylindium (TMI) and tris(N,N-diisopropyl-2-dimethylamido-guanidinato) (III) (ITG), by means of thermodynamic and kinetic modelling. According to the results, at T= 593 K, TMI should exhibit partial decomposition of ~8% after 400 s to first generate methylindium (MI) and ethane (C2H6), a percentage that increases to ~34% after 1 hour of exposure inside the gas chamber. Therefore, this precursor should be present in an intact form to undergo physisorption during the In half-cycle of the deposition experiment (< 10 s). On the other hand, the ITG decomposition starts already at the temperatures used in the bubbler and it will slowly decompose as it is evaporated during the deposition process. At T= 300 C, the decomposition is a fast process that reaches 90% completeness after 1 s, and where equilibrium, at which almost no ITG remains, is achieved before 10 s. In this case, the decomposition pathway is likely to occur via elimination of carbodiimide ligand. Ultimately, these results should contribute for a better understanding of the reaction mechanism involved in the InN growth from these precursors.

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Section: -Introductionmentioning

confidence: 93%

Section: 1-trimethylindiummentioning

confidence: 99%

Section: -Introductionmentioning

confidence: 99%

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Thermal Decomposition of Trimethylindium and Indium Trisguanidinate Precursors for InN Growth: An Ab-Initio and Kinetic Modelling Study

Damas¹,

Rönnby

Pedersen

et al. 2023

Preprint

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“…Nitride semiconductors have become key materials in the development of new technologies in fields of nanoengineering . In particular, indium nitride (InN) offers remarkable features that are especially desirable for use in high-performance optoelectronic devices, such as a low electron mass (0.07 m 0 ); a narrow direct bandgap (0.6 – 0.7 eV); a high electron mobility (4850 cm 2 /Vs); and a widely tunable low-loss plasmon frequency in a large range of electron concentrations (10 17 – 10 21 cm –3 ), covering a broad region of the mid-infrared spectral range . As a consequence, several InN-based materials are especially attractive for use in high-electron-mobility transistors; two-dimensional electron gas systems; transducers in biocompatible chemical-sensing devices; infrared plasmonic devices; and most recently as tribo-piezoelectric nanogenerators .…”

Section: Introductionmentioning

confidence: 99%

Electron Accumulation Tuning by Surface-to-Volume Scaling of Nanostructured InN Grown on GaN(001) for Narrow-Bandgap Optoelectronics

Oliveira

Kuchuk

Lytvyn

et al. 2023

ACS Appl. Nano Mater.

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The existence of an uncontrolled electron accumulation layer near the surface of InN thin films is an obstacle for the development of reliable InN-based devices for use in narrowbandgap optoelectronics. In this article, we show that this can be regulated by modulating the surface of the InN grown on GaN(001). By increasing the surface-to-volume ratio, we can demonstrate a reduction in the surface carrier concentration from ∼10 18 to ∼10 17 cm −3 . These controlled changes are despite the idea that donor-type surface states, which contribute to conduction band electrons are reported to be the main origin of the surface charge density. Additionally, by evaluating the surface carrier concentration through modeling of photoluminescence (PL) spectroscopy, we have found a failure of the Burstein−Moss theory. Conversely, modeling of the longitudinal optical phonon−plasmon coupled modes measured using Raman spectroscopy, simulations of InN structures using the k•p method, and Hall effect measurements, where possible, showed an excellent correlation of the surface electron concentrations. The large inhomogeneous broadening in the PL, which overwhelms any broadening due to the Burstein−Moss effect, is understood to be the result of varying Stark shifts due to varying strain throughout high surface-to-volume nanostructures, which dramatically affects the spatially indirect nature of the electron−hole recombination. Finally, our findings demonstrate how the electron population of 2D and 3D InN nanostructures can be tuned by structural features, such as porosity and/or the surface-to-volume ratio.

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“…However, the experimentally achieved mobility of InN is still far behind the theoretical estimation. [7][8][9][10] The mobility is limited due to carrier scattering phenomena occurring at the scattering centers generated from the crystal imperfections in the hetero-epitaxial InN layer. [11,12] The growth of high quality InN is challenging due to impurity incorporation, low dissociation temperature, narrow growth window and lack of suitable substrate.…”

Section: Introductionmentioning

confidence: 99%

Growth of High Mobility InN Film on Ga‐Polar GaN Substrate by Molecular Beam Epitaxy for Optoelectronic Device Applications

Imran

Sulaman

Yousaf

et al. 2022

Adv Materials Inter

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The fabrication of high‐speed electronic and communication devices has rapidly grown the demand for high mobility semiconductors. However, their high cost and complex fabrication process make them less attractive for the consumer market and industrial applications. Indium nitride (InN) can be a potential candidate to fulfill industrial requirements due to simple and low‐cost fabrication process as well as unique electronic properties such as narrow direct bandgap and high electron mobility. In this work, 3 µm thick InN epilayer is grown on (0001) gallium nitride (GaN)/Sapphire template under In‐rich conditions with different In/N flux ratios by molecular beam epitaxy. The sharp InN/GaN interface monolayers with the In‐polar growth are observed, which assure the precise control of the growth parameters. The directly probed electron mobility of 3610 cm2 V‐1 s‐1 is measured with an unintentionally doped electron density of 2.24 × 1017 cm‐3. The screw dislocation and edge dislocation densities are calculated to be 2.56 × 108 and 0.92 × 1010 cm‐2, respectively. The step‐flow growth with the average surface roughness of 0.23 nm for 1 × 1 µm2 is confirmed. The high quality and high mobility InN film make it a potential candidate for high‐speed electronic/optoelectronic devices.

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High electron mobility in nearly-dislocation-free hexagonal InN

Cited by 4 publications

References 35 publications

Thermal Decomposition of Trimethylindium and Indium Trisguanidinate Precursors for InN Growth: An Ab-Initio and Kinetic Modelling Study

Thermal Decomposition of Trimethylindium and Indium Trisguanidinate Precursors for InN Growth: An Ab-Initio and Kinetic Modelling Study

Electron Accumulation Tuning by Surface-to-Volume Scaling of Nanostructured InN Grown on GaN(001) for Narrow-Bandgap Optoelectronics

Growth of High Mobility InN Film on Ga‐Polar GaN Substrate by Molecular Beam Epitaxy for Optoelectronic Device Applications

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