High-efficient spin injection in GaN through a lattice-matched tunnel layer
Mingyu Chen,
Shiming Huang,
Wei Jiang
et al.
Abstract:Semiconductor spintronics has brought about revolutionary application prospects in future electronic devices. The tunnel junction plays a key role in achieving efficient spin injection in semiconductors. This work employed the GaN semiconductor as a room-temperature spin injection system, taking advantage of its weak spin–orbit coupling and spin scattering. By introducing a lattice-matched AlN barrier layer to improve the tunneling interface, advanced spin injection and transport were realized compared with tr… Show more
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