High-Efficient Spin Injection in GaN at Room Temperature Through A Van der Waals Tunnelling Barrier

Lin, Di; Kang, Wenyu; Wu, Qipeng; Song, Anke; Wu, Xuefeng; Liu, Guozhen; Wu, Jianfeng; Wu, Yaping; Li, Xu; Wu, Zhiming; Cai, Duanjun; Yin, Jun; Kang, Junyong

doi:10.1186/s11671-022-03712-5

Cited by 5 publications

(1 citation statement)

References 37 publications

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“…Based on the rapid development of semiconductors, it is straightforward to develop magnetic semiconductors to fabricate multifunctional devices. Using spin injection into magnetic semiconductors, spintronic devices could be practical. − However, massive attempts have proved that magnetic semiconductors are still far from expectations. Alternatively, organic semiconductors without any magnetic elements offer a new route.…”

Section: Introductionmentioning

confidence: 99%

Photocontrolled All-Organic Magnetoelectric Switch Based on Two Types of Charge Transfer Complexes at Room Temperature

Qu,

Qiao,

Zhou

et al. 2024

J. Phys. Chem. C

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Integrating all optical, electrical, and magnetic properties into a single device is still difficult in the construction of multifunctional spintronic devices. Herein, by combining two kinds of charge transfer (CT) complexes in a single organic device, a polarity-adjustable room-temperature magnetoconductance (MC) has been achieved at a fixed bias voltage. Specifically, the interfacial ground-state charge transfer (GSCT) complex and the excited-state charge transfer (ESCT) complex exhibit different MC profiles and hence together generate an optical-incentive MC without any ferromagnetic electrodes. The simulation of the MC profiles suggests that the GSCT-induced hyperfine interaction (HFI) dominates in the negative MC in the dark, while the ESCT-induced Δg mechanism dominates in the positive MC with illumination. Furthermore, an ultrahigh-amplitude MC (over 10 000%) is obtained near the turn-on voltage at room temperature. More importantly, the MC responses can be controlled and manipulated by magnetic field, applied electric field, and variable intensity and wavelength of light excitation. Finally, the universality of the design principle in devices is demonstrated by the change of the series of materials, in which the electron and hole transport layers are replaced by other corresponding materials of the same type, respectively. This work offers some clues for realizing pure organic multifunctional devices coupling light-electricity-magnetism in the future.

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Section: Introductionmentioning

confidence: 99%

Photocontrolled All-Organic Magnetoelectric Switch Based on Two Types of Charge Transfer Complexes at Room Temperature

Qu,

Qiao,

Zhou

et al. 2024

J. Phys. Chem. C

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High-efficient and gate-tunable spin transport in GaN thin film at room temperature

Lin

Chen

et al. 2023

Applied Physics Letters

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The emerging semiconductor spintronics has offered a practical routine for developing high-speed and energy-efficient electronic and optoelectronic devices. GaN holds broad prospects for room-temperature spintronic applications due to its weak spin scattering and moderate spin–orbit coupling. However, the development of GaN-based spintronic devices is still hindered by the relatively low spin injection efficiency and gate controllability. In this study, gate-modulated spin transport was achieved in a highly spin-polarized GaN-based non-local spin valve. A maximum spin diffusion length of 510 nm and a high spin polarization of 14.1% was obtained with the CoFeB/MgO tunnel spin injector. By applying gate voltages from −3 to +3 V, the spin-dependent magnetoresistance can be tuned in the range of 1.6–3.9 Ω. The modulation is attributed to the controllable spin relaxation of electrons by the gate electric field. This work has demonstrated high spin polarization and exceptional electric controllability in GaN, pushing forward the research in spin field-effect transistors.

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Electronic structure and magnetothermal property of two-dimensional ferromagnetic NbSe2 monolayer regulated by carrier concentration

Wu,

Geng

et al. 2023

Journal of Applied Physics

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Investigating high-performance and stable spintronics devices has been a research hotspot in recent years. In this paper, we employed first-principles methods and Monte Carlo (MC) simulations to explore the structure, electronic, and magnetic properties of monolayer NbSe2, as well as its behavior under carrier concentration modulation. The research on the electronic structure reveals that by introducing an appropriate amount of holes, the material can undergo a transition from metal to a half-metal state, achieving 100% high spin polarization. Investigation of magnetic crystalline anisotropy shows that the magnetic crystal anisotropy energy of 1210 μeV in out-of-plane is beneficial to maintain ferromagnetic order at high temperatures. In addition, doping with suitable carriers can effectively enhance or strengthen the ferromagnetic coupling in NbSe2 so that the magnetization easy axis is shifted. This reveals the potential application prospects of NbSe2 in electronically controlled spintronic devices. Analysis of the Fermi surface shows that both holes and electron doping increase the Fermi velocity of the material. The effect of hole doping is particularly significant, indicating its potential application in Fermi velocity engineering. Under the theoretical framework of the extended two-dimensional Ising model, based on MC simulation, the Curie temperature (TC) of NbSe2 is predicted to be 162 K. The effects of carrier concentration and the magnetic field on the magnetic and thermal properties of monolayer NbSe2 are simulated. The results show that appropriately increasing the hole doping concentration and magnetic field is conducive to obtaining ferromagnetic half-metallic materials with TC higher than room temperature, which provides theoretical support for experimental preparation.

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High-Efficient Spin Injection in GaN at Room Temperature Through A Van der Waals Tunnelling Barrier

Cited by 5 publications

References 37 publications

Photocontrolled All-Organic Magnetoelectric Switch Based on Two Types of Charge Transfer Complexes at Room Temperature

Photocontrolled All-Organic Magnetoelectric Switch Based on Two Types of Charge Transfer Complexes at Room Temperature

High-efficient and gate-tunable spin transport in GaN thin film at room temperature

Electronic structure and magnetothermal property of two-dimensional ferromagnetic NbSe2 monolayer regulated by carrier concentration

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