High-efficiency μc-Si/c-Si heterojunction solar cells

Yamamoto, Hiroshi; Takaba, Y.; Komatsu, Y.; Yang, Ming‐Ju; Hayakawa, T.; Shimizu, Mitsuaki; Takiguchi, H.

doi:10.1016/s0927-0248(02)00071-5

Cited by 27 publications

(19 citation statements)

References 4 publications

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“…Гетеропереходные солнечные элементы -HIT (heterojunction with intrinsic thin-layer solar cells)-элементы, изготовленные на основе структур α-Si : H/Si, -в настоящее время признаны одними из наиболее перспективных. В лучших образцах таких СЭ достигнут КПД более 25% (АМ1.5) [1][2][3][4] Темновые вольт-амперные характеристики (ВАХ) были получены при комнатной температуре в диапазоне токов 1 • 10 −13 −10 A и напряжений 0−10 V. Световые (нагрузочные) ВАХ HIT-элементов измерялись на импульсном имитаторе при комнатной температуре со спектром излучения АМ0 (0.136 W/cm 2 ). Экспериментальные данные представлены в табл.…”

Section: поступило в редакцию 12 марта 2018 гunclassified

“…2). Предэкспоненциальный множитель J 0d , соответствующий диффузионному механизму токопрохождения, при облучении в указанном диапазоне флюенсов возрастает более чем на два порядка и при флюенсе 1 • 10 14 cm −2 достигает значения 2 • 10 −11 A/cm 2 Таким образом, в работе приведены результаты экспериментального исследования влияния облучения электронами с энергией 3.8 MeV на характеристики гетеропереходных солнечных элементов на основе структур α-Si : H/Si. Прямые темновые ВАХ СЭ до и после облучения хорошо описываются суммой трех токовых компонент, соответствующих трем механизмам токопрохождения: туннельно-ловушечному (диодный коэффициент A t > 2), рекомбинационному (A r = 2) и диффузионному (A d = 1).…”

Section: поступило в редакцию 12 марта 2018 гunclassified

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Радиационная стойкость гетеропереходных солнечных элементов alpha-Si : H/Si с тонким внутренним слоем i-alpha-Si : H

Калиновский¹,

Теруков²,

Контрош³

et al. 2018

Письма В Журнал Технической Физики

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We have studied the degradation of photoelectric characteristics of heterojunction solar cell samples based on α-Si:H/Si structures upon irradiation by electrons with an energy of 3.8 MeV and fluences of 1 × 10^12–1 × 10^14 cm^–2. It is shown that the efficiency of the samples of heterojunction solar cell elements under the conditions of AM0 illumination (0.136 W/cm^2) is reduced by 25% at a fluence of 2 × 10^13 cm^–2. This is more than an order of magnitude higher than the critical fluence value achieved previously when silicon solar cells with a p–n junction and an n -type base were irradiated by high-energy electrons.

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Section: поступило в редакцию 12 марта 2018 гunclassified

Радиационная стойкость гетеропереходных солнечных элементов alpha-Si : H/Si с тонким внутренним слоем i-alpha-Si : H

Калиновский¹,

Теруков²,

Контрош³

et al. 2018

Письма В Журнал Технической Физики

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“…There is a growing fi eld of hybrid solar cells in which the core/shell nanoparticles or inorganic nanoparticles are blended in a semiconducting polymer matrix as a photovoltaic layer. Recently, research has been conducted in the thin-fi lm solar cells that use CuInS 2 and CuInSe 2 core/shell systems, due to their bandgap and adsorption coeffi cient, and were realized with conversion effi ciency of 18.8% [101][102][103]. For the design of tandem solar cells, one can tune the bandgap in which one particular compound is altered to get various bandgaps.…”

Section: Core/shell Nanoparticles Towards Pv Applicationsmentioning

confidence: 99%

State‐of‐the‐Art of Nanostructures in Solar Energy Research

Sagadevan¹

2014

Advanced Energy Materials

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The world's major energy sources are non-renewable and are faced with an ever-increasing demand, and hence are not expected to last long. Besides being non-renewable, these sources include mainly fossil fuels, and contribute tremendously to the perennial problem of global warming. The serious depletion and pollution problems of the above energy sources have made the international community focus attention on alternative sources of energy, especially solar energy, which appears highly promising. Nanostructure-based solar energy is attracting signifi cant attention as a possible candidate for achieving drastic improvement in photovoltaic energy conversion effi ciency. Although such solar energy is expected to be more expensive, there is a growing need for effi cient and lightweight solar cells in aerospace and related industries. It is certain to rule the energy sector when break-even, of high performance is achieved and its cost becomes comparable with that of other energy sources. Various approaches have been proposed to enhance the effi ciency of solar cells. Applications of nanotechnology help us to design solar devices more economically. Nanophotovoltaic cells are used to create cost, effective, effi cient, solar energy storage systems or solar energy on a large scale. Nanostructured materials contain structures with dimensions in that scale; they include polycrystalline materials with nanometer-sized crystallites, materials with surface protrusions spatially separated by a few nanometers granular or porous materials with grain sizes in the nanometer range or nanometer-sized metallic clusters embedded in a dielectric matrix. The motivation for using nanostructured materials emerges from their specifi c physical and chemical properties. Enhancing the regular crystalline

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“…HJT solar cells exhibit PCE = 22% (2016) with prognosis for rise to PCE = 24% in 2027 [1]. Furthermore, a combination of HJT and back contact technology will allow to overcome PCE values predicted for conventional IBC cells made with diffusion approach as it is confirmed by a world record PCE values above 26% reported for such cells [2].…”

Section: Introductionmentioning

confidence: 99%

From 11% Thin Film to 23% Heterojunction Technology (HJT) PV Cell: Research, Development and Implementation Related 1600 × 1000 mm2 PV Modules in Industrial Production

Terukov¹,

Kosarev²,

Абрамов³

et al. 2018

Solar Panels and Photovoltaic Materials

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Plasma-enhanced chemical vapor deposition (PECVD) developed for thin film (TF) Si:Hbased materials resulted in large area thin film PV cells on glass and flexible substrates. However, these TF cells demonstrate low power conversion efficiency PCE = 11% for double and PCE = 13% for triple junction cells below predicted PCE ≈ 24%. PV cells on crystalline silicon (c-Si) provide PCE ≈ 17-19%. Cost of c-Si PV cells lowered continuously due to reducing price of silicon wafers and enlarging their size. Two factors stimulated a combination of PECVD films and c-Si devices: (a) compatibility of the technologies and (b) possibility for variation of electronic properties in PECVD materials. The latter results in additional build-in electric fields improving charge collection and harvesting solar spectrum. We describe a transformation of PECVD TF solar cell technology for 11% efficiency modules to heterojunction technology (HJT) c-Si modules with 23% efficiency. HJT PV structure comprises c-Si wafer with additional junctions created by PECVD deposited layers allowing development of single wafer PV cells with PCE ≈ 24% and the size limited by wafer (15.6 x 15.6 cm 2). The chapter starts with background in PECVD and c-Si PV cells. Then, in Section 2, we describe electronic properties of PECVD materials in HJT PV structures. Section 3 deals with structure and fabrication process for HJT devices. In Section 4, we present and discuss performance characteristics of the devices. Section 5 describes implementation of the developed HJT module (1600 x 1000 mm 2) based on HJT single wafer cells in industry with presentation and discussion of characteristics related to industrial production. Finally, Section 6 presents the outlook and summary of the chapter.

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High-efficiency μc-Si/c-Si heterojunction solar cells

Cited by 27 publications

References 4 publications

Радиационная стойкость гетеропереходных солнечных элементов alpha-Si : H/Si с тонким внутренним слоем i-alpha-Si : H

Радиационная стойкость гетеропереходных солнечных элементов alpha-Si : H/Si с тонким внутренним слоем i-alpha-Si : H

State‐of‐the‐Art of Nanostructures in Solar Energy Research

From 11% Thin Film to 23% Heterojunction Technology (HJT) PV Cell: Research, Development and Implementation Related 1600 × 1000 mm2 PV Modules in Industrial Production

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