High-efficiency wafer-scale finishing of 4H-SiC (0001) surface using chemical-free electrochemical mechanical method with a solid polymer electrolyte

Zulkifle, Che Nor Syahirah Binti Che; Hayama, Kenshin; Murata, Junji

doi:10.1016/j.diamond.2021.108700

Cited by 11 publications

(4 citation statements)

References 43 publications

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“…As shown in Figure 4a,c, although the untreated surface does not exhibit an obvious peak, a clear F 1s peak can be observed on the surface treated with the dried PEM, which can be attributed to C─F or O─C─F (690 eV) bonds. [43] These components were derived from PEM (PFSA), suggesting that PEM stamps were decomposed by strong oxidizing agents such as hydroxyl radicals (OH•) and atomic oxygen (O•), which are potentially generated through the electrolysis at the PEM/Cu interface, [31,32] and the resulting PFSA components from PEM stamps adhered to the Cu surfaces. The intensity of the F 1s peak from the surface treated with the water-swollen PEM was lower than that treated with the dried PEM, which was mainly due to the indirect contact between the water-swollen PEM and the Cu surfaces owing to the presence of the water layer at the interface.…”

Section: Electrochemical Etching Characteristics At the Pem/cu Interfacementioning

confidence: 99%

“…Owing to the high mechanical hardness of superionic conductors, achieving high throughput and large area patterning using roll-to-roll and roll-to-plate processes via the S4 process is difficult. [30] In our previous study, we developed a liquid electrolyte-free electrochemical oxidation method using a polymer electrolyte membrane (PEM) and demonstrated the surface oxidation of gallium nitride (GaN), [31] polishing with the surface oxidation of silicon carbide (SiC), [32,33] and patterned oxide film formation on silicon (Si) [34] and titanium (Ti). [35] This approach involved electrochemical treatment performed using an anode/PEM/cathode sandwich electrochemical system.…”

Section: Introductionmentioning

confidence: 99%

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Cu Direct Nanopatterning Using Solid‐State Electrochemical Dissolution at the Anode/Polymer Electrolyte Membrane Interface

Tsuji,

Morimoto,

Takizawa

et al. 2024

Adv Materials Inter

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Patterned copper (Cu) has applications in various electronic devices such as metal interconnects. Electrochemical approaches to patterning, such as electrochemical machining and electroplating, are promising methods for the direct fabrication of patterns on Cu surfaces. However, owing to the use of electrolytes, this technique suffers from issues such as low patterning resolution and significant environmental impact. Herein, a novel direct electrochemical patterning technique for the anodic dissolution of Cu using a polymer electrolyte membrane (PEM) stamp with a patterned surface instead of a liquid electrolyte, is proposed. In this technique, an electrochemical reaction selectively ionizes the Cu surface in contact with the PEM stamp, enabling the fabrication of patterns on Cu surfaces with a resolution of several hundred nanometers under a low‐temperature air atmosphere. Overall, the proposed all‐solid‐state electrochemical patterning technique employing PEM stamps offers a facile, environmentally friendly, and direct process that does not use resists or harsh chemicals, making it a cost‐effective approach that can improve processing efficiency.

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Section: Electrochemical Etching Characteristics At the Pem/cu Interfacementioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Cu Direct Nanopatterning Using Solid‐State Electrochemical Dissolution at the Anode/Polymer Electrolyte Membrane Interface

Tsuji,

Morimoto,

Takizawa

et al. 2024

Adv Materials Inter

Self Cite

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“…As summarized in Table 3 , several efficiency‐enhancing methods concerning Fenton‐like reaction, core/shell abrasive particles, FAP, PCMP, and MAS have been combined to form a hybrid polishing system. [ 43,54,99,102,105,111,134–139 ] It can be seen that the synergistic approaches including Fenton‐like reaction combined with FAP, ECMP combined with core–shell abrasives, and PCMP combined with MAS help simultaneously achieve high MRR and good surface quality ( Ra < 0.5 nm).…”

Section: Status and Challenges Of The Chemical–mechanical Polishing (...mentioning

confidence: 99%

“…As summarized in Table 3, several efficiency-enhancing methods concerning Fenton-like reaction, core/shell abrasive particles, FAP, PCMP, and MAS have been combined to form a hybrid polishing system. [43,54,99,102,105,111,[134][135][136][137][138][139] It can be seen that the synergistic approaches including Fenton-like reaction combined with FAP, ECMP combined with core-shell abrasives, and PCMP combined with MAS help simultaneously achieve high MRR and good surface quality (Ra < 0.5 nm). Since the efficiency of CMP is limited by the oxidation of 4H-SiC, researchers have developed synergistic oxidation approaches such as the plasma-assisted electrochemical oxidation, the ultrasonic-assisted electrochemical oxidation, and the electro-assisted photocatalysis oxidation.…”

Section: Other Synergistic Approachesmentioning

confidence: 99%

Chemical–Mechanical Polishing of 4H Silicon Carbide Wafers

Wang

et al. 2023

Adv Materials Inter

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Abstract4H silicon carbide (4H‐SiC) holds great promise for high‐power and high‐frequency electronics, in which high‐quality 4H‐SiC wafers with both global and local planarization are cornerstones. Chemical–mechanical polishing (CMP) is the key processing technology in the planarization of 4H‐SiC wafers. Enhancing the performance of CMP is critical to improving the surface quality and reducing the processing cost of 4H‐SiC wafers. In this review, the superior properties of 4H‐SiC and the processing of 4H‐SiC wafers are introduced. The development of CMP with chemical, mechanical, and chemical–mechanical synergistic approaches to improve the performance of CMP is systematically reviewed. The basic principle and processing system of each improvement approach are presented. By comparing the material removal rate of CMP and the surface roughness of CMP‐treated 4H‐SiC wafers, the prospect on the chemical, mechanical, and chemical–mechanical synergistic improvement approaches is finally provided.

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Ultrafast Solid‐State Electrochemical Imprinting Utilizing Polymer Electrolyte Membrane Stamps for Static/Dynamic Structural Coloration and Letter Encryption

Yamazaki,

Tsuji,

Takizawa

et al. 2024

Small Methods

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Micro and nanopatterned surfaces hold potential for various applications, such as wettability control, antibiofouling, and optical components. However, conventional patterning processes are characterized by complexity, high costs, and environmental burdens because of the use of resists. Therefore, this paper proposes facile and ultrafast electrochemical imprinting employing a polymer electrolyte membrane (PEM) stamp for achieving micro and nanoscale patterning on Si surfaces. The solid‐state electrochemical process efficiently generates oxide and hydrated oxide (Si–OH) patterns within several seconds at room temperature in a dry ambient environment. The formed oxide pattern can be employed as an etching mask to prepare diffraction gratings with diverse high‐resolution (≈100 nm) patterns utilizing the dry PEM stamp. The resulting oxide pattern on the Si surface exhibits instantaneous structural coloration upon exposure to humid air, attributable to the formation of a water microdroplet array on the oxide pattern. The oxide pattern is successfully applied for dynamic diffraction grating and letter encryption. The proposed solid‐state electrochemical oxidation scheme based on a PEM stamp, which eliminates the need for liquid electrolyte and resist, represents a simple and ultrafast process with a time cost of a few seconds, characterized by low processing costs and environmental impact.

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High-efficiency wafer-scale finishing of 4H-SiC (0001) surface using chemical-free electrochemical mechanical method with a solid polymer electrolyte

Cited by 11 publications

References 43 publications

Cu Direct Nanopatterning Using Solid‐State Electrochemical Dissolution at the Anode/Polymer Electrolyte Membrane Interface

Cu Direct Nanopatterning Using Solid‐State Electrochemical Dissolution at the Anode/Polymer Electrolyte Membrane Interface

Chemical–Mechanical Polishing of 4H Silicon Carbide Wafers

Ultrafast Solid‐State Electrochemical Imprinting Utilizing Polymer Electrolyte Membrane Stamps for Static/Dynamic Structural Coloration and Letter Encryption

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