High-efficiency solar cells based on micro-nano scale structures

Dutta, Achyut K.; Olah, Robert; Mizuno, Genki; Sengupta, Rabi; Park, Jin‐Hong; Wijewarnasuriya, P. S.; Dhar, Nibir K.

doi:10.1117/12.855610

Cited by 6 publications

(3 citation statements)

References 0 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The abnormal radiation phenomenon of the incident electromagnetic wave, including surface plasmon polaritons [4][5][6], Wood's anomaly [7], and cavity resonance [8][9][10], can be induced mainly due to multiple reflection and diffraction effects of the structures. Several types of microscale and nanoscale structures have been demonstrated in the absorption enhancement of energy conversion systems, such as solar cells [11,12] and thermophotovoltaic devices [13], including nanowires [10,11,14,15], nanorods [16], nanodisks [17], nanocones [18], nanopyramids [19,20], nanoholes [21,22], and other grating structures [23][24][25][26]. Our recent experimental studies [27,28] showed that an array of nanoholes integrated on a 2-μm-thick Si film effectively traps light with wavelengths between 800 and 950 nm and can be used to achieve a high EQE (40-60%) in Si photodetectors while ensuring ultrafast impulse response (full-width at half-maximum) of 30 ps.…”

Section: Introductionmentioning

confidence: 99%

Rigorous coupled-wave analysis of absorption enhancement in vertically illuminated silicon photodiodes with photon-trapping hole arrays

et al. 2019

View full text Add to dashboard Cite

In this paper, we present a rigorous coupled-wave analysis (RCWA) of absorption enhancement in all-silicon (Si) photodiodes with integrated hole arrays of different shapes and dimensions. The RCWA method is used to analyze the light propagation and trapping in the photodiodes on both Si-on-insulator (SOI) and bulk Si substrates for the datacom wavelength at about 850 nm. Our calculation and measurement results show that funnel-shaped holes with tapered sidewalls lead to low back-reflection. A beam of light undergoes a deflection subsequent to the diffraction in the hole array and generates laterally propagating waves. SOI substrates with oxide layers play an important role in reducing the transmission loss, especially for deflected light with higher-order diffraction from the hole array. Owing to laterally propagating modes and back-reflection on the SiO2 film, light is more confined in the thin Si layer on the SOI substrates compared to that on the bulk Si substrates. Experimental results based on fabricated devices support the predictions of the RCWA. Devices are designed with a 2-μm-thick intrinsic layer, which ensures ultrafast impulse response (full-width at half-maximum) of 30 ps. Measurements for integrated photodiodes with funnel-shaped holes indicate an enhanced external quantum efficiency of more than 55% on the SOI substrates. This represents more than 500% improvement compared to photodiodes without integrated phototrapping nanoholes.

show abstract

Section: Introductionmentioning

confidence: 99%

Rigorous coupled-wave analysis of absorption enhancement in vertically illuminated silicon photodiodes with photon-trapping hole arrays

et al. 2019

View full text Add to dashboard Cite

show abstract

“…To increase both PCGE and PCCE, the solar cell structure must include the following: (a) large junction area within a given volume of a solar cell, (b) photo absorption region thick enough to capture all the photons entering the cell, (c) pn-junction located as close to the photo absorption region as possible, and (d) incorporation of a technique to capture a wide range of spectrum of light that enters a cell and (e) large surface area to absorb all flux of radiation. Figure 8(b) shows the novel solar cell structure meeting all mentioned requirement to increase the conversion efficiency [20]. Figure 9 shows the solar cell performance comparing with the conventional solar cell.…”

Section: Imagingmentioning

confidence: 98%

Prospects of photonic devices for energy generation, communication, and imaging

Dutta

2010

International Conference on Electrical &Amp; Computer Engineering (ICECE 2010)

Self Cite

View full text Add to dashboard Cite

The application area of photonics (semiconductor) devices are expanding, especially in the area of next optical communication, imaging, and energy generation. This paper describes the trends of key photonic devices technologies for communication, imaging, and energy generation. The state-ofthe art of technologies in each mentioned applications are included. Focused are mainly on the common device structure which have numerous applications. Finally, future device technologies will also be addressed.

show abstract

“…1(a). A surface textured with pyramids has been demonstrated to have enhanced trapping of the incident light [10,[22][23][24]. It functions as a broadband antireflection layer and also scatters light efficiently to increase the optical path length in the active material.…”

mentioning

confidence: 99%

Wideband enhancement of infrared absorption in a direct band-gap semiconductor by using nonabsorptive pyramids

Dai¹,

Yap²,

Chen³

2012

Opt. Express

View full text Add to dashboard Cite

Efficient trapping of the light in a photon absorber or a photodetector can improve its performance and reduce its cost. In this paper we investigate two designs for light-trapping in application to infrared absorption. Our numerical simulations demonstrate that nonabsorptive pyramids either located on top of an absorbing film or having embedded absorbing rods can efficiently enhance the absorption in the absorbing material. A spectrally averaged absorptance of 83% is achieved compared to an average absorptance of 28% for the optimized multilayer structure that has the same amount of absorbing material. This enhancement is explained by the coupled-mode theory. Similar designs can also be applied to solar cells.

show abstract

High-efficiency solar cells based on micro-nano scale structures

Cited by 6 publications

References 0 publications

Rigorous coupled-wave analysis of absorption enhancement in vertically illuminated silicon photodiodes with photon-trapping hole arrays

Rigorous coupled-wave analysis of absorption enhancement in vertically illuminated silicon photodiodes with photon-trapping hole arrays

Prospects of photonic devices for energy generation, communication, and imaging

Wideband enhancement of infrared absorption in a direct band-gap semiconductor by using nonabsorptive pyramids

Contact Info

Product

Resources

About