High efficiency silicon heterojunction solar cell using novel structure

Mueller, Thomas; Schwertheim, Stefan; Mueller, N.; Meusinger, K.; Wdowiak, Boguslaw; Grewe, O.; Fahrner, W. R.

doi:10.1109/pvsc.2010.5616901

Cited by 4 publications

(3 citation statements)

References 11 publications

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“…More recently, μc-Si:H and nanocrystalline silicon oxide (μc-SiO x :H) have also been investigated for application in amorphous/crystalline silicon heterojunction (SHJ) solar cells [3], [5], [7], [8], [23], [24]. Device integration of these layers has the potential to improve further the already very high conversion efficiencies achieved to date of up to 25.1% for two-side-contacted and 25.6% for interdigitated back-contacted SHJ cells, obtained with presumably all-amorphous layers [25], [26].…”

mentioning

confidence: 99%

Strategies for Doped Nanocrystalline Silicon Integration in Silicon Heterojunction Solar Cells

Seif

Descoeudres

Nogay

et al. 2016

IEEE J. Photovoltaics

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Carrier collection in silicon heterojunction (SHJ) solar cells is usually achieved by doped amorphous silicon layers of a few nanometers, deposited at opposite sides of the crystalline silicon wafer. These layers are often defect-rich, resulting in modest doping efficiencies, parasitic optical absorption when applied at the front of solar cells, and high contact resistivities with the adjacent transparent electrodes. Their substitution by equally thin doped nanocrystalline silicon layers has often been argued to resolve these drawbacks. However, low-temperature deposition of highly crystalline doped layers of such thickness on amorphous surfaces demands sophisticated deposition engineering. In this paper, we review and discuss different strategies to facilitate the nucleation of nanocrystalline silicon layers and assess their compatibility with SHJ solar cell fabrication. We also implement the obtained layers into devices, yielding solar cells with fill factor values of over 79% and efficiencies of over 21.1%, clearly underlining the promise this material holds for SHJ solar cell applications.Index Terms-Microcrystalline silicon, nanocrystalline silicon, silicon heterojunctions (SHJs), solar cells.

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mentioning

confidence: 99%

Strategies for Doped Nanocrystalline Silicon Integration in Silicon Heterojunction Solar Cells

Seif

Descoeudres

Nogay

et al. 2016

IEEE J. Photovoltaics

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“…Although HIT solar cell achieved a great success, the reported performances display a considerable discrepancy, reflecting some underlying theoretical and technological difficulties in developing HIT solar cells based on different methods such as plasma-enhanced vapor chemical deposition (PECVD), high-frequency PECVD, and hot-wire CVD [4]. In the theoretical aspect, the electrical transport mechanism on the a-Si:H/c-Si hetero interface is not clear yet [5].…”

Section: Introductionmentioning

confidence: 99%

Radicals and ions controlling by adjusting the antenna-substrate distance in a-Si:H deposition using a planar ICP for c-Si surface passivation

Zhou

et al. 2017

Applied Surface Science

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Being a key issue in the research and fabrication of silicon heterojunction (SHJ) solar cells, crystalline silicon (c-Si) surface passivation is theoretically and technologically intricate due to its complicate dependence on plasma characteristics, material properties, and plasma-material interactions. Here amorphous silicon (a-Si:H) grown by a planar inductively coupled plasma (ICP) reactor working under different antenna-substrate distances of d was used for the surface passivation of low-resistivity p-type c-Si. It is found that the microstructures (i.e., the crystallinity, Si-H bonding configuration etc.) and passivation function on c-Si of the deposited a-Si:H were profoundly influenced by the parameter of d, which primarily determines the types of growing precursors of SiH n /H contributing to the film growth and the interaction between the plasma and growing surface. c-Si surface passivation is analyzed in terms of the d-dependent a-Si:H properties and plasma characteristics. The controlling of radical types and ion bombardment on the growing surface through adjusting parameter d is emphasized.

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“…Since the open circuit voltage (V oc ) is highly dependent on the interface passivation, the key factor to achieve high efficient SHJ solar cells is the good passivation at heterointerface [3][4][5]. Recently, in order to improve the heterointerface passivation, hydrogenated microcrystalline silicon (lc-Si:H) layers have been introduced to replace the conventional hydrogenated amorphous silicon (a-Si:H) emitter layers in SHJ solar cells [6][7][8][9]. Compared with a-Si:H, the lc-Si:H emitter has higher doping level which can improve the electric field induced passivation at heterointerface, especially at the low injection level [9,10].…”

Section: Introductionmentioning

confidence: 99%

Improved hetero-interface passivation by microcrystalline silicon oxide emitter in silicon heterojunction solar cells

Cong

Zhao

et al. 2016

Science Bulletin

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High efficiency silicon heterojunction solar cell using novel structure

Cited by 4 publications

References 11 publications

Strategies for Doped Nanocrystalline Silicon Integration in Silicon Heterojunction Solar Cells

Strategies for Doped Nanocrystalline Silicon Integration in Silicon Heterojunction Solar Cells

Radicals and ions controlling by adjusting the antenna-substrate distance in a-Si:H deposition using a planar ICP for c-Si surface passivation

Improved hetero-interface passivation by microcrystalline silicon oxide emitter in silicon heterojunction solar cells

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