High-efficiency semiconductor resonant-cavity light-emitting diodes: a review

Delbeke, Danaë; Bockstaele, Ronny; Bienstman, Peter; Baets, Roel; Bénisty, Henri

doi:10.1109/2944.999172

Cited by 141 publications

(108 citation statements)

References 68 publications

(85 reference statements)

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“…A practical realization of such device is a resonant cavity enhanced light emitting diode (RC LED). Such diode was for the first time realized by Schubert et al [14], and later by others [15][16][17]. One of such realization is a device designed for the emission at 1000 nm in which the 8 nm thick InGaAs quantum wells located in a GaAs slab are enclosed by two DBR [18].…”

Section: Microcavity Employing Emittersmentioning

confidence: 99%

Optoelectronic Devices Employing One-Dimensional Photonic Structures

Muszalski

2008

Acta Phys. Pol. A

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This paper reviews the experimental and theoretical results obtained during work on the modern semiconductor devices employing onedimensional photonic structures. After short review of the physical features of structures consisting of 1D stack of the alternating high and low index layers, particular attention will be given to unique features of the devices employing microcavities: resonant cavity LEDs, resonant-cavity enhanced photo-detectors, vertical cavity surface emitting lasers, and also vertical external cavity surface emitting lasers. At the end the semiconductor saturable absorber mirrors are discussed.

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Section: Microcavity Employing Emittersmentioning

confidence: 99%

Optoelectronic Devices Employing One-Dimensional Photonic Structures

Muszalski

2008

Acta Phys. Pol. A

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“…The first is the InGaAs RCLED internal angular emission distribution pattern, as shown in Fig. 52; 29 the second one is a shifted InGaAs RCLED internal emission pattern, which shifts the first emission about 5° to mimic the UCSB RCLED maximum internal emission at 14°; the third is the conventional Lambertian emission pattern. Figure 53 illustrates the three normalized internal angular emission distribution patterns.…”

Section: Impact Of Device Size and Internal Emission Pattern On Lightmentioning

confidence: 99%

High-Efficiency Nitride-Based Solid-State Lighting

Fini¹,

Nakamura²

2003

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In this second annual report we summarize the progress in the second-year period of Department of Energy contract #DE-FC26-01NT41203, entitled "High-Efficiency Nitride-Based Solid-State Lighting". The two teams, from the University of California at Santa Barbara (Principle Inve stigator: Dr. Shuji Nakamura) and Rensselaer Polytechnic Institute (led by Dr. N. Narendran), are pursuing the goals of this contract from thin film growth, characterization, and packaging standpoints. The UCSB team has recently made significant progress in the development of light-emitting diodes (LEDs) with AlGaN active regions emitting in the ultraviolet (UV), resonant-cavity LEDs (RCLEDs), as well as lateral epitaxial overgrowth (LEO) techniques to obtain large-area non-polar GaN films with low average dislocation density. The Rensselaer team has benchmarked the performance of commercially ava ilable LED systems and has also conducted efforts to develop an optimized RCLED packaging scheme, including development of advanced epoxy encapsulant chemistrie s.

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“…A number of strategies have been employed to improve the extraction efficiency by using surface roughening, chip shaping, and nonresonant or resonant cavity effects. [1][2][3][4][5] In this letter, we introduce a way to improve light extraction by using arrays of micron sized LEDs ͑ -LEDs͒ with parabolic sidewalls to direct the emission through the transparent substrate. The active region contains self-assembled In͑Ga͒As quantum dots ͑QDs͒ on a GaAs substrate.…”

Section: Broadband Quantum Dot Micro-light-emitting Diodes With Parabmentioning

confidence: 99%