High efficiency, radiation-hard solar cells

Ager, Joel W.; Walukiewicz, W.

doi:10.2172/840450

Cited by 3 publications

(3 citation statements)

References 22 publications

(22 reference statements)

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“…29 Ga vacancy is a deep level acceptor, which can be viewed as the effective non-radiative recombination centers. 4 As a result, the non-radiative recombination processes of photo-generated carriers at the non-radiative recombination centers are increased. This leads to the decrease of R sh .…”

Section: Resultsmentioning

confidence: 99%

“…35 With the increase of defects after irradiation, E F moved towards E FS and finally E F was pinned at E FS (the so-called pinning effect). 4 Therefore, large numbers of donor-like defects were generated and the electron concentration in InN increased a lot after irradiation.…”

Section: Resultsmentioning

confidence: 99%

“…The radiation damage threshold of InGaN materials is improved by at least two orders of magnitude compared with the other aviation grade materials (GaAs and GaInP) for high efficiency solar cells. [4][5][6] When the proton fluence is 5 × 10 11 cm −2 , the efficiency of InGaN Solar cell decreased by only about 3%. 7 This indicates that InGaN solar cells have excellent radiation resistance.…”

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confidence: 99%

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Statistical Analysis of the Photoelectric Characteristics for InGaN/GaN MQWs Solar Cells Following Proton Irradiation

Li¹,

Shan²,

Zheng³

2020

ECS J. Solid State Sci. Technol.

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The statistical photoelectric properties of InGaN/GaN MQWs solar cells under proton irradiation were studied. Three groups of devices were irradiated with 3 MeV proton beams with fluences of 1.0 × 1011 cm−2, 5.0 × 1011 cm−2, and 1.0 × 1012 cm−2. Averaged experiment results showed that the open circuit voltage (VOC) and fill factor (FF) always decreased. In contrast, the short circuit current density (JSC) and photoelectric conversion efficiency (η) increased first and then decreased with the increase of fluence. Firstly, the donor-like defects of InGaN layer in active region played a major role in increasing JSC and η when the fluence was relatively low. Due to the introduction of donor-like defects, extra free electrons were produced, which lead to an increase in the number of effective carriers. With the further increasing of proton fluence, the number of free electrons caused by donor-like defects in the used InGaN material (low indium component) increased slowly due to pinning effect. However, additional point defects (Ga vacancies) increased significantly. Ga vacancies can act as effective non-radiative recombination centers, thereby reducing the number of effective carriers. The combined effect of pinning effect and non-radiative recombination process is responsible for the first increase and subsequent decline of JSC and η.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

mentioning

confidence: 99%

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Statistical Analysis of the Photoelectric Characteristics for InGaN/GaN MQWs Solar Cells Following Proton Irradiation

Li¹,

Shan²,

Zheng³

2020

ECS J. Solid State Sci. Technol.

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InGaN/GaN Multiple Quantum Wells Solar Cell as an Efficient Power Source for Space Mission

Hungyo

Singh²,

Warepam

et al. 2020

Advances in Communication, Devices and Networking

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The Review of Types of Radiation Resistance Materials and Proposed Experiments

Su¹,

2022

J. Phys.: Conf. Ser.

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In the last decade, the development of irradiation materials has greatly promoted the progress of nuclear technology. Therefore, the application of radiation resistance materials and the understanding of its principle are very important. This paper summarized several irradiation resistance materials to reflect the type, principle, calculation and its application in nuclear reactors. For example, the atoms of the alloy interfere with each other to form a material more resistant to radiation than pure nickel under temperature changes. And the organic radiation resistance material glass fiber reinforced plastics (GFRPs) can resist the gamma rays generated in nuclear reactors. The radiation resistance principle of magnesium aluminate defect clusters will also be discussed. In addition, we have designed an experiment to measure the energy-loss of neutron irradiation to test the material’s neutron resistance ability.

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High efficiency, radiation-hard solar cells

Cited by 3 publications

References 22 publications

Statistical Analysis of the Photoelectric Characteristics for InGaN/GaN MQWs Solar Cells Following Proton Irradiation

Statistical Analysis of the Photoelectric Characteristics for InGaN/GaN MQWs Solar Cells Following Proton Irradiation

InGaN/GaN Multiple Quantum Wells Solar Cell as an Efficient Power Source for Space Mission

The Review of Types of Radiation Resistance Materials and Proposed Experiments

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