High-Efficiency Oxide Solar Cells with ZnO/Cu₂O Heterojunction Fabricated on Thermally Oxidized Cu₂O Sheets

Abstract

High conversion efficiencies were achieved in low cost n–p heterojunction oxide solar cells with an Al-doped ZnO (AZO)/non-doped ZnO (ZO)/Cu2O structure. This achievement was made possible by the formation of an n-ZO thin-film layer, prepared with an appropriate thickness by low damage deposition, on high quality Cu2O sheets produced by the thermal oxidization of copper sheets: n-ZO thin film optimal thickness ranges from 30 to 50 nm. Photovoltaic characteristics such as an open circuit voltage of 0.69 V, a fill factor of 0.55 and a conversion efficiency of 3.83% were attained under simulated AM1.5G solar illumination.

Band-structure calculations for the 3dtransition metal oxides inGW

“…Cu 2 O is p-type semiconductor that recently received renewed interest as a photovoltaic and photocatalytic material [3,4,29,69,86]. While its relative large band gap of 2.17 eV is still suitable for a wide-gap solar absorber, the optical transition at the band gap energy is parity forbidden [68,69], leading to a weak absorption onset, which is particularly detrimental in thin-film absorbers.…”

“…Whereas conventional semiconductor technologies are mostly based on main group compounds, emerging materials often contain transition metals, examples include TiO 2 as a transparent conducting oxide [1], Fe chalcogenides [2] and Cu 2 O [3,4] as photovoltaic solar absorbers, or Fe 2 O 3 as a photo-electrocatalyst [5].…”

Наноразмерные пленки Cu-=SUB=-2-=/SUB=-O: формирование методом ВЧ-магнетронного распыления, исследование структурных и оптических свойств

“…Для формирования оксида меди (I) используют целый ряд методов, наиболее распространенным из которых является высокотемпературное окисление меди в кис-лородной среде. Выращенные таким образом пленки Cu 2 O характеризуются высоким совершенством кри-сталлической структуры [6] и подвижностью дырок, достигающей 110 см 2 /В · с. Однако высокая температура формирования (более 1000…”

Synthesis of a cuprite thin film by oxidation of a Cu metal precursor utilizing ultrasonically generated water vapor

“…Due to its characteristic properties, it is known as a promising material for applications to the hetero-junction devices such as diodes, photovoltaic cells, etc [3][4][5][6][7][8][9].…”