High efficiency on boron emitter n-type Cz silicon solar cells with industrial process

Veschetti, Y.; Sanzone, V.; Cabal, R.; Brand, Pierre; Raymond, G.; Bettinelli, A.

doi:10.1109/pvsc.2011.6186660

Cited by 7 publications

(4 citation statements)

References 5 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Many former challenges, such as the formation of p + (boron) emitters and passivation thereof are basically overcome. However, recent studies have shown that the metallization using screen printing and firing through technique still limits the open‒circuit voltage ( V O C ) of such cell types . The already industrially proven metallization for the n + emitters by using screen‒printed Ag pastes does not successfully work also for the p + diffused emitters, due to very high contact resistance.…”

Section: Introductionmentioning

confidence: 99%

Metallization‒induced recombination losses of bifacial silicon solar cells

Edler

Mihailetchi

Koduvelikulathu

et al. 2014

Progress in Photovoltaics

View full text Add to dashboard Cite

In this study, we investigate the metallization‒induced recombination losses of high efficiency bifacial n‒type and p‒type crystalline Si solar cells. From the experimental data, we found that the most efficiency limiting parameter by the screen‒printed metallization is the open‒circuit voltage (VOC) of the cells. We investigated the mechanism responsible for this loss by varying the metallization fraction on either side of the cell and determined the local enhancement in the dark saturation current density beneath the metal contacts (J0(met)). Under optimum fabrication conditions, the J0(met) at metal‒p+ (boron) emitter interfaces was found to be significantly higher compared with the values obtained for metal‒n+ emitters. A two‒dimensional simulation model was used to get further insight into the recombination mechanism leading to these VOC losses. The model assumes that metal contacts penetrate (or etch) into the diffused region following the firing process and depassivate the interface. Applying this model to our n‒type solar cells with a boron p+ emitter, we demonstrated that the simple loss of passivated area beneath the metal contact cannot explain the degradation observed in the VOC of the cell without considering a significant etching or metal penetration into the emitter region. Copyright © 2014 John Wiley & Sons, Ltd.

show abstract

Section: Introductionmentioning

confidence: 99%

Metallization‒induced recombination losses of bifacial silicon solar cells

Edler

Mihailetchi

Koduvelikulathu

et al. 2014

Progress in Photovoltaics

View full text Add to dashboard Cite

show abstract

“…The main limitation highlighted up to now is the high number of process steps compared to the simple p‐type solar cell process. Indeed, using conventional BBr 3 and POCl 3 high temperature diffusions, several masking steps and chemical oxide removal must be added in order to isolate the front B‐emitter from the rear P‐BSF . Among the various ways discussed in the literature to simplify this process flow, two solutions have been highlighted: the co‐diffusion approach and the use of ion implantation .…”

Section: Introductionmentioning

confidence: 99%

Understanding of the annealing temperature impact on ion implanted bifacial n‐type solar cells to reach 20.3% efficiency

Lanterne

Perchec

Gall

et al. 2014

Progress in Photovoltaics

Self Cite

View full text Add to dashboard Cite

Ion implantation has the advantage of being a unidirectional doping technique. Unlike gaseous diffusion, this characteristic highlights strong possibilities to simplify solar cell process flows. The use of ion implantation doping for n-type PERT bifacial solar cells is a promising process, but mainly if it goes with a unique co-annealing step to activate both dopants and to grow a SiO 2 passivation layer. To develop this process and our SONIA cells, we studied the impact of the annealing temperature and that of the passivation layers on the electrical quality of the implanted B-emitter and P-BSF. A high annealing temperature (above 1000°C) was necessary to fully activate the boron atoms and to anneal the implantation damages. Low J 0BSF (BSF contribution to the saturation current density) of 180 fA/cm 2 was reached at this high temperature with the best SiO 2 passivation layer. An average efficiency of 19.7% was reached using this simplified process flow ("co-anneal process") on large area (239 cm 2 ) Cz solar cells. The efficiency was limited by a low FF, probably due to contaminations by metallization pastes. Improved performances were achieved in the case of a "separated anneals" process where the P-BSF is activated at a lower temperature range. An average efficiency of 20.2% was obtained in this case, with a 20.3% certified cell.

show abstract

“…The fire‐through Ag/Al paste could damage the emitter junction area and lower the V oc of the solar cells . In order to decrease the emitter contacts losses, we design a new type of floating bus bar configuration and compare with the regular bus bar.…”

Section: Resultsmentioning

confidence: 99%

Development of back-junction back-contact silicon solar cells based on industrial processes

Wang

Qian

et al. 2017

Prog. Photovolt: Res. Appl.

View full text Add to dashboard Cite

We have presented simplified industrial processes to fabricate high performance back-junction back-contact (BJBC) silicon solar cells. Good optical surface structures (solar averaged reflectance 2.5%) and high implied open-circuit voltage (0.695 V) have been realized in the BJBC cell precursors through wet chemical processing, co-diffusion, P ion implantation and annealing oxidation, as well as laser patterning and plasma enhanced chemical vapour deposition passivation processes. We have achieved a certified high efficiency of close to 22% on BJBC silicon solar cells with the size of 4.04 cm 2 by using screen printing and co-firing technologies. The manufacturing process flow further successfully yields efficiency of around 21% BJBC silicon solar cells with enlarged sizes of 6 × 6 cm 2 . The present work has demonstrated that the commercialization of low-cost and high-efficiency BJBC solar cells is possible because we have used processes compatible with existing production lines.

show abstract

High efficiency on boron emitter n-type Cz silicon solar cells with industrial process

Cited by 7 publications

References 5 publications

Metallization‒induced recombination losses of bifacial silicon solar cells

Metallization‒induced recombination losses of bifacial silicon solar cells

Understanding of the annealing temperature impact on ion implanted bifacial n‐type solar cells to reach 20.3% efficiency

Development of back-junction back-contact silicon solar cells based on industrial processes

Contact Info

Product

Resources

About