High-efficiency normal-incidence vertical p-i-n photodetectors on a germanium-on-insulator platform

Lin, Yiding; Lee, Kwang Hong; Bao, Shuyu; Guo, Xin; Wang, Hong; Michel, Jürgen; Tan, Chuan Seng

doi:10.1364/prj.5.000702

Cited by 64 publications

(44 citation statements)

References 41 publications

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“…The high on/off ratio of the devices around

–

is observed, manifesting good rectifying behavior. For the device with a flat surface, the dark current is 0.13 mA/cm 2 at a reverse bias of 1 V. This value is two orders of magnitude lower than previously reported ones for Ge-on-Si [ 30 , 43 , 44 ] and GeSn/Ge [ 45 ] photodiodes with dislocation-rich Ge active layers. The ultralow dark current density in Ge/Si QDIPs is attributed to the formation of dislocation-free Ge QDs by strain-driven self-organization through the Stranski–Krastanov growth mode.…”

Section: Resultsmentioning

confidence: 60%

Near-Infrared Photoresponse in Ge/Si Quantum Dots Enhanced by Photon-Trapping Hole Arrays

et al. 2021

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Group-IV photonic devices that contain Si and Ge are very attractive due to their compatibility with integrated silicon photonics platforms. Despite the recent progress in fabrication of Ge/Si quantum dot (QD) photodetectors, their low quantum efficiency still remains a major challenge and different approaches to improve the QD photoresponse are under investigation. In this paper, we report on the fabrication and optical characterization of Ge/Si QD pin photodiodes integrated with photon-trapping microstructures for near-infrared photodetection. The photon traps represent vertical holes having 2D periodicity with a feature size of about 1 μm on the diode surface, which significantly increase the normal incidence light absorption of Ge/Si QDs due to generation of lateral optical modes in the wide telecommunication wavelength range. For a hole array periodicity of 1700 nm and hole diameter of 1130 nm, the responsivity of the photon-trapping device is found to be enhanced by about 25 times at λ=1.2 μm and by 34 times at λ≈1.6 μm relative to a bare detector without holes. These results make the micro/nanohole Ge/Si QD photodiodes promising to cover the operation wavelength range from the telecom O-band (1260–1360 nm) up to the L-band (1565–1625 nm).

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“…The high on/off ratio of the devices around

–

Section: Resultsmentioning

confidence: 60%

Near-Infrared Photoresponse in Ge/Si Quantum Dots Enhanced by Photon-Trapping Hole Arrays

et al. 2021

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“…Another study reported a PIN photodiode based on lateral Si/Ge/Si heterojunction with a 3 dB bandwidth over

[ 21 ]. A normal incidence Ge photodetector was recently reported that has a 0.39 A/W [ 22 ]. It has cut-off frequencies of 1 and 32 GHz for the designs with the mesa diameters of

, respectively.…”

Section: Device Performancementioning

confidence: 99%

Highly Efficient Near-Infrared Detector Based on Optically Resonant Dielectric Nanodisks

Saadabad

Pauly²,

Herschbach³

et al. 2021

Nanomaterials

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Fast detection of near-infrared (NIR) photons with high responsivity remains a challenge for photodetectors. Germanium (Ge) photodetectors are widely used for near-infrared wavelengths but suffer from a trade-off between the speed of photodetection and quantum efficiency (or responsivity). To realize a high-speed detector with high quantum efficiency, a small-sized photodetector efficiently absorbing light is required. In this paper, we suggest a realization of a dielectric metasurface made of an array of subwavelength germanium PIN photodetectors. Due to the subwavelength size of each pixel, a high-speed photodetector with a bandwidth of 65 GHz has been achieved. At the same time, high quantum efficiency for near-infrared illumination can be obtained by the engineering of optical resonant modes to localize optical energy inside the intrinsic Ge disks. Furthermore, small junction capacitance and the possibility of zero/low bias operation have been shown. Our results show that all-dielectric metasurfaces can improve the performance of photodetectors.

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“…The Ge-OI photodetectors are rst discussed. In contrast to the technical maturity of the Geon-SOI platform, the Ge-OI platform is recently gaining attention for both advanced electronic 41 and photonic 42,43,44 applications. In this work, the Ge-OI was formed on a 200-mm Si (100) wafer via Ge-on-Si epitaxy, bonding, and layer transfer, using silicon dioxide (SiO 2 ) as the intermediate insulator layer 45 .…”

Section: Recessed Sin X Stressor For Enhanced and Uniform Mechanical mentioning

confidence: 99%

Strain-enabled ultra-broadband Ge-based photonic devices for low-cost integration in PICs

Lin

Wen

et al. 2020

Preprint

Self Cite

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Photonic-integrated circuits (PICs) have become one of the most promising solutions to the burgeoning global data communication and are being envisioned to have revolutionary impact in many other emerging fields. This outlook requires future PICs to be significantly more broadband and cost-effective. The current germanium (Ge)-based active photonic devices in PICs are thus facing a new bandwidth-cost trade-off. Here, we demonstrate ultra-broadband, high-efficiency Ge photodetectors up to 1,630 nm operation wavelength and Ge0.99Si0.01 electro-absorption (EA) modulator arrays with an operating range of ~100 nm from 1,525 to 1,620 nm, using a CMOS-compatible recess-type silicon nitride (SiNx) stressor. The broadband operation could facilitate a wide (>100 nm) window for low-cost Ge modulator-detector co-integration, requiring only a single step of Ge epitaxy and two different SiNx depositions. The broad modulation and co-integration coverage can be entirely shifted to shorter (~1,300 nm) and longer (>1,700 nm) wavelengths with small amounts of Si or tin (Sn) alloying. This proof-of-concept work provides a pathway for PICs towards future low-cost and high-data-capacity communication networks, immediately accessible by designers through foundries.

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High-efficiency normal-incidence vertical p-i-n photodetectors on a germanium-on-insulator platform

Cited by 64 publications

References 41 publications

Near-Infrared Photoresponse in Ge/Si Quantum Dots Enhanced by Photon-Trapping Hole Arrays

Near-Infrared Photoresponse in Ge/Si Quantum Dots Enhanced by Photon-Trapping Hole Arrays

Highly Efficient Near-Infrared Detector Based on Optically Resonant Dielectric Nanodisks

Strain-enabled ultra-broadband Ge-based photonic devices for low-cost integration in PICs

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