High-efficiency MOSFET bridge rectifier for AlN MEMS cantilever vibration energy harvester

Takei, Ryohei; Okada, Hironao; Noda, Daiji; Ohta, Ryo; Takeshita, Toshihiro; Itoh, Toshihiro; Kobayashi, Takeshi

doi:10.7567/jjap.56.04cc03

Cited by 7 publications

(3 citation statements)

References 21 publications

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“…To achieve flexibility, the authors performed a sacrificial technique of backside lapping assisted by PMMA, which reduced stress, especially during the bonding and debonding stages. A similar use of AlN coupled with a MOSFET was reported in [132] and [133]. An industrially rated device must be employed in harsh environments, and certain factors, such as temperature, radiation, and environmental factors, can lead to poor device performance.…”

Section: Industrial Applicationsmentioning

confidence: 74%

A Review of the Recent Applications of Aluminum Nitride-Based Piezoelectric Devices

et al. 2023

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Piezoelectric materials have attracted considerable attention over the last two decades because many technologies utilize their core properties of piezoelectric materials. Previous applications consisted of bulk structures; however, a shift towards better performance and a more simplified and compatible fabrication method are required. Aluminum nitride (AlN) is a material that fits these criteria; it has a non-centrosymmetric crystal structure with a polarized c-axis and exhibits piezoelectric properties. Furthermore, it has an added benefit as the fabrication process of AIN is compatible with complementary metal-oxide semiconductor technology. This has led to a rapid increase in the adoption and interest in AlNbased devices. In this review, the crystal structure of AlN and its piezoelectric properties are compared with those of aluminum scandium nitride. Subsequently, functional devices such as consumer-based devices, telecommunication-based devices, industrial-related applications, and medical applications are presented. Finally, a summary and discussion of the future AlN research are presented.

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Section: Industrial Applicationsmentioning

confidence: 74%

A Review of the Recent Applications of Aluminum Nitride-Based Piezoelectric Devices

et al. 2023

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“…Notably, vibrations have correspond to a relatively high power density, especially in social infrastructure systems such as manufacturing compressors, elevator or escalator conveyors, and pump stations. (6,7) Thus, many techniques, such as those involving magnetic-energy harvesting, (8) electret-biased vibration-energy harvesting, (9) and piezoelectric harvesting, (10,11) have been developed and even commercially applied to harvest power from vibration sources. Among these techniques, the use of a MEMSbased piezoelectric gauge is a valuable powerless sensing approach.…”

Section: Introductionmentioning

confidence: 99%

Fabrication and Characterization of High-frequency Vibration Sensor over 6 kHz with Potential for Energy Harvesting

Zhang¹,

Takei²,

Lu³

et al. 2021

Sensors and Materials

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We report on the fabrication and characterization of a high-frequency and high-voltageoutput microelectromechanical systems (MEMS) vibration sensor with potential for energy harvesting. A novel structure was developed to ensure that the vibration sensor could output a high voltage in the high-frequency vibration domain. Specifically, the device was composed of eight aluminum nitride C-shaped spring flexures, which surrounded and supported a disk proof mass. The vibration sensor was fabricated, and its functional characteristics were comprehensively evaluated at a commercial foundry with an 8-inch MEMS process line. In experiments, the sensor exhibited an extremely high center resonance frequency of up to 6.7 kHz. Moreover, an output voltage of up to 167.8 mV was realized under an acceleration of 1 g.

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“…In this manuscript we present results obtained from Si field-effect transistors comprising alternative gate piezoelectrics [21][22][23][24][25][26] made from AlN [27]. The transistors were integrated on silicon cantilevers [28]. By bending the cantilever, the mechanosensitive response was measured recording the channel current (I DS ) over time [29,30].…”

Section: Introductionmentioning

confidence: 99%

A stress sensor based on a silicon field effect transistor comprising a piezoelectric AlN gate dielectric

Winterfeld

Thormählen

Lewitz

et al. 2019

J Mater Sci: Mater Electron

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Piezoelectric materials have been introduced to transistor gate stacks to improve MOSFET behaviour and develop sensor applications. In this work, we present an approach to a partly industrial field effect transistor, with a gate stack based upon low temperature AlN. Using the piezoelectric effect of the nitrogen-polar AlN, we are able to drive the transistor by inducing strain across the device. To ensure maximum sensitivity, the piezoelectric material is placed as closely to the transistor channel as possible and the transistor is operated in the most sensitive part of the sub-threshold regime. This allows the detection of different magnitudes of force applied to the device and to easily distinguish between them. The created sensor was analysed using XRD, current-voltage and specific force application measurements. Furthermore, the continuous response to periodic low frequency stimulation is investigated. Therefore, we introduce a highly scalable device with a wide range of application possibilities, ranging from varying sensor systems to energy harvesting.Publisher's Note Springer Nature remains neutral with regard to jurisdictional claims in published maps and institutional affiliations.

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High-efficiency MOSFET bridge rectifier for AlN MEMS cantilever vibration energy harvester

Cited by 7 publications

References 21 publications

A Review of the Recent Applications of Aluminum Nitride-Based Piezoelectric Devices

A Review of the Recent Applications of Aluminum Nitride-Based Piezoelectric Devices

Fabrication and Characterization of High-frequency Vibration Sensor over 6 kHz with Potential for Energy Harvesting

A stress sensor based on a silicon field effect transistor comprising a piezoelectric AlN gate dielectric

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