High-Efficiency Moderate-Power Amplifier Using Packaged GaN Transistor With Improved Average PAE and Gain for Batteryless IoT Applications

Almeida, Jorge Virgilio de; Gu, Xiaoqiang; Hussain, Intikhab; Wu, Ke

doi:10.1109/tmtt.2022.3219423

Cited by 5 publications

(1 citation statement)

References 35 publications

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“…However, these techniques pose challenges, such as a high peak-to-average power ratio (PAPR) of up to 9-12 dB, coupled with the necessity for a high degree of linearity in communication systems [3][4][5]. Consequently, power amplifiers (PAs) must operate at deep output power back-off (OBO), resulting in a diminished average efficiency [6]. Given that PAs are typically the most power-consuming components in wireless communication systems, their inefficiency engenders significant concerns such as constrained battery life and heightened heat dissipation [7].…”

Section: Introductionmentioning

confidence: 99%

A Broadband Three-Way Series Doherty Power Amplifier with Deep Power Back-Off Efficiency Enhancement for 5G Application

Que,

Li,

Wang

2024

Electronics

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This article presents a new broadband three-way series Doherty power amplifier (DPA) topology, which enables a broadband output power back-off (OBO) efficiency enhancement of up to 10 dB or higher. The proposed DPA topology achieves Doherty load modulation and three-way power combining through a transformer, which requires only a low coupling factor, thus facilitating its implementation in double-sided PCBs or monolithic microwave integrated circuit (MMIC) processes. The design equations for the proposed DPA topology are proposed and analyzed in detail. A proof-of-concept PA at the 2.1–2.8 GHz band using commercial GaN transistors was designed and fabricated to validate the proposed concept. Within the operating frequency band, it achieves a saturated output power (Psat) of 44.5–46.5 dBm with a peak drain efficiency (DE) of 60–72%, and 43–52% DE at 10 dB OBO. Moreover, under a 20 MHz long-term evolution (LTE)-modulated signal, the PA demonstrates a 36.8–37.5 dBm average output power (Pavg) and 47–53% average drain efficiency (DEavg). Notably, the adjacent channel leakage ratio (ACLR) is as low as −35–−28.2 dBc without any digital predistortion (DPD).

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