1999
DOI: 10.1063/1.125176
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High-efficiency midinfrared “W” laser with optical pumping injection cavity

Abstract: Articles you may be interested inRecord pulsed power demonstration of a 2 μ m GaSb-based optically pumped semiconductor laser grown lattice-mismatched on an AlAs/GaAs Bragg mirror and substrate Appl. Phys. Lett. 95, 081112 (2009);

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Cited by 34 publications
(18 citation statements)
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References 14 publications
(6 reference statements)
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“…efficiency at 125 K is 1.25%, and the falloff with temperature is similar to that observed in the earlier OPIC and non-OPIC devices, 12 reaching approximately 0.22% at 300 K. The efficiencies at the lowest temperatures are not as high as expected when measured with respect to values above 150 K. At the lowest temperatures, the pump pulse lengths may become shorter than the radiative lifetimes in the OPIC laser.…”
Section: Discussionsupporting
confidence: 55%
See 1 more Smart Citation
“…efficiency at 125 K is 1.25%, and the falloff with temperature is similar to that observed in the earlier OPIC and non-OPIC devices, 12 reaching approximately 0.22% at 300 K. The efficiencies at the lowest temperatures are not as high as expected when measured with respect to values above 150 K. At the lowest temperatures, the pump pulse lengths may become shorter than the radiative lifetimes in the OPIC laser.…”
Section: Discussionsupporting
confidence: 55%
“…Another successful approach has been the optical pumping injection cavity (OPIC) laser, 12,13 in which the active region is enclosed between two GaSb/ AlAsSb-distributed Bragg reflector (DBR) mirrors that induce multiple passes of the pump beam. A schematic is shown in Fig.…”
Section: Introductionmentioning
confidence: 99%
“…Since ternary AlAs x Sb 1Ϫx or quaternary Al x Ga 1Ϫx As y Sb 1Ϫy can provide alternative injection regions, 4 it is important to determine the thermal conductivity for those alloys. A second configuration of interest is the ''digital alloy'' 29,30 , in which a͒ Author to whom correspondence should be addressed; electronic mail: borcat@rpi.edu constituent layers may be as thin as 1 monolayer ͑ML͒. One must be concerned by the general decrease of the thermal conductivity with decreasing superlattice period that most GaAs/Al͑Ga͒As experiments have observed.…”
Section: Introductionmentioning
confidence: 99%
“…2,4,5 The unit structures can be periodically repeated to form a superlattice with an extended optically active region. Such superlattices have sufficient gain to be used for vertical cavity surface emitting lasers ͑VCSELs͒, that can be pumped either optically [6][7][8][9][10][11][12][13] or electrically. 8,14,15 Edgeemitting lasers based on InAs/GaSb superlattices have also been demonstrated by a number of authors.…”
Section: Introductionmentioning
confidence: 99%