High Efficiency Hydrogenated Nanocrystalline Cubic Silicon Carbide/Crystalline Silicon Heterojunction Solar Cells Using an Optimized Buffer Layer

Irikawa, Junpei; Miyajima, Shinsuke; Watahiki, Tatsuro; Konagai, Makoto

doi:10.1143/apex.4.092301

Cited by 22 publications

(11 citation statements)

References 21 publications

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“…For SHJ devices, such films should not jeopardize surface passivation and emitter formation. Tested alternatives to replace the a-Si:H stacks are (microcrystalline) silicon oxides [136,137,182,183] and carbides [148,[184][185][186]. Microcrystalline silicon has a lower but indirect bandgap and features a higher doping efficiency, making it an attractive material for emitter [52,[187][188][189][190] and BSF formation [189,[191][192][193] as well.…”

Section: Future Directionsmentioning

confidence: 99%

High-efficiency Silicon Heterojunction Solar Cells: A Review

Wolf¹,

Descoeudres²,

Holman³

et al. 2012

Green

108

113

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Abstract. Silicon heterojunction solar cells consist of thin amorphous silicon layers deposited on crystalline silicon wafers. This design enables energy conversion efficiencies above 20% at the industrial production level. The key feature of this technology is that the metal contacts, which are highly recombination active in traditional, diffused-junction cells, are electronically separated from the absorber by insertion of a wider bandgap layer. This enables the record open-circuit voltages typically associated with heterojunction devices without the need for expensive patterning techniques. This article reviews the salient points of this technology. First, we briefly elucidate device characteristics. This is followed by a discussion of each processing step, device operation, and device stability and industrial upscaling, including the fabrication of solar cells with energyconversion efficiencies over 21%. Finally, future trends are pointed out.

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Section: Future Directionsmentioning

confidence: 99%

High-efficiency Silicon Heterojunction Solar Cells: A Review

Wolf¹,

Descoeudres²,

Holman³

et al. 2012

Green

108

113

View full text Add to dashboard Cite

show abstract

Section: Future Directionsmentioning

confidence: 99%

High-efficiency Silicon Heterojunction Solar Cells: A Review

Wolf

Descoeudres

Holman

et al. 2018

Energyo

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Silicon heterojunction solar cells consist of thin amorphous silicon layers deposited on crystalline silicon wafers. This design enables energy conversion efficiencies above 20% at the industrial production level. The key feature of this technology is that the metal contacts, which are highly recombination active in traditional, diffused-junction cells, are electronically separated from the absorber by insertion of a wider bandgap layer. This enables the record open-circuit voltages typically associated with heterojunction devices without the need for expensive patterning techniques. This article reviews the salient points of this technology. First, we briefly elucidate device characteristics. This is followed by a discussion of each processing step, device operation, and device stability and industrial upscaling, including the fabrication of solar cells with energyconversion efficiencies over 21%. Finally, future trends are pointed out.

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“…ITO was deposited by radio frequency (RF) magnetron sputtering. The details of the nc-3C-SiC:H emitter deposition, ITO deposition, and the overall solar cell fabrication process are reported in the previous publications [5,7,28,29]. The complex refractive index included in the AFORS-HET package for n-and i-type a-Si:H, p-type c-Si, and Al electrode were used.…”

Section: Cell Structure and Optical Modelmentioning

confidence: 99%

“…To solve this problem, relatively wider band-gap material with lower refractive index and low absorption coefficient should be used. For this end, hydrogenated nanocrystalline cubic silicon carbide (nc-3C-SiC:H) has been shown to be a promising material as an emitter layer for the heterojunction solar cell [4][5][6][7][8].…”

Section: Introductionmentioning

confidence: 99%

Triple Layer Antireflection Design Concept for the Front Side of c-Si Heterojunction Solar Cell Based on the Antireflective Effect of nc-3C-SiC:H Emitter Layer

Ateto¹,

Konagai

Miyajima³

2016

International Journal of Photoenergy

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We investigated the antireflective (AR) effect of hydrogenated nanocrystalline cubic silicon carbide (nc-3C-SiC:H) emitter and its application in the triple layer AR design for the front side of silicon heterojunction (SHJ) solar cell. We found that the nc-3C-SiC:H emitter can serve both as an emitter and antireflective coating for SHJ solar cell, which enables us to realize the triple AR design by adding one additional dielectric layer to normally used SHJ structure with a transparent conductive oxide (TCO) and an emitter layer. The optimized SHJ structure with the triple layer AR coating (LiF/ITO/nc-3C-SiC:H) exhibit a short circuit current density (Jsc) of 38.65 mA/cm2and lower reflectivity of about 3.42% at wavelength range of 300 nm–1000 nm.

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High Efficiency Hydrogenated Nanocrystalline Cubic Silicon Carbide/Crystalline Silicon Heterojunction Solar Cells Using an Optimized Buffer Layer

Cited by 22 publications

References 21 publications

High-efficiency Silicon Heterojunction Solar Cells: A Review

High-efficiency Silicon Heterojunction Solar Cells: A Review

High-efficiency Silicon Heterojunction Solar Cells: A Review

Triple Layer Antireflection Design Concept for the Front Side of c-Si Heterojunction Solar Cell Based on the Antireflective Effect of nc-3C-SiC:H Emitter Layer

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