High-Efficiency, High-Power Density and Wide-Range Power Supply Design Based on GaN HEMT

Zhang, Kesong; Chen, Xikun; Peng, Zehui; Chen, Yongjian; Guo, Wei; Sun, Ze

doi:10.1109/icopesa54515.2022.9754382

Cited by 1 publication

(1 citation statement)

References 5 publications

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“…Their ability to handle high voltages and currents efficiently, along with their high-speed switching capabilities, has made them ideal for applications like power amplifiers, DC-DC converters, and power supplies [19][20][21][22]. They enable the development of compact and energy-efficient power electronic systems [23]. In the realm of radio frequency (RF) and microwave electronics, AlGaN/GaN HEMTs offer exceptional high-frequency performance, low noise characteristics, and high-power output [24][25][26][27].…”

Section: Introductionmentioning

confidence: 99%

Reliability Assessment of On-Wafer AlGaN/GaN HEMTs: The Impact of Electric Field Stress on the Mean Time to Failure

Chakraborty,

Kim

2023

Micromachines

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We present the mean time to failure (MTTF) of on-wafer AlGaN/GaN HEMTs under two distinct electric field stress conditions. The channel temperature (Tch) of the devices exhibits variability contingent upon the stress voltage and power dissipation, thereby influencing the long-term reliability of the devices. The accuracy of the channel temperature assumes a pivotal role in MTTF determination, a parameter measured and simulated through TCAD Silvaco device simulation. Under low electric field stress, a gradual degradation of IDSS is noted, accompanied by a negative shift in threshold voltage (ΔVT) and a substantial increase in gate leakage current (IG). Conversely, the high electric field stress condition induces a sudden decrease in IDSS without any observed shift in threshold voltage. For the low and high electric field conditions, MTTF values of 360 h and 160 h, respectively, were determined for on-wafer AlGaN/GaN HEMTs.

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