2015
DOI: 10.1063/1.4922196
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High efficiency heterojunction solar cells on n-type kerfless mono crystalline silicon wafers by epitaxial growth

Abstract: We present a heterojunction (HJ) solar cell on n-type epitaxially grown kerfless crystalline-silicon (c-Si) with a conversion efficiency of 22.5%. The total cell area is 243.4 cm2. The cell has a short-circuit current density of 38.6 mA/cm2, an open-circuit voltage of 735 mV, and a fill factor of 0.791. The key advantages and technological tasks of epitaxial wafers for HJ solar cells are discussed, in comparison with conventional n-type Czockralski c-Si wafers. The combination of HJ and kerfless technology can… Show more

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Cited by 33 publications
(20 citation statements)
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“…Finally, as described in Section 2.2, monocrystalline and multicrystalline wafers are obtained from a wire-cutting process, with a typical associated kerf loss of about 100 mm per cut wafer. This explains the quest for ''kerf-less'' crystalline silicon technologies, including silicon ribbon growth, 178,179 film (re-)crystallization, [180][181][182] and silicon epitaxial growth, [183][184][185][186][187][188][189] possibly combined with lift-off, controlled spalling or other techniques to detach thin silicon absorbers from a thicker substrate 190,191 or growth template. 192,193 Several strategies have been developed to increase light coupling in ultra-thin silicon (o50 mm) and fabricate solar cells from such material.…”
Section: Wafer Crystallinity and Conductivity Typementioning
confidence: 99%
“…Finally, as described in Section 2.2, monocrystalline and multicrystalline wafers are obtained from a wire-cutting process, with a typical associated kerf loss of about 100 mm per cut wafer. This explains the quest for ''kerf-less'' crystalline silicon technologies, including silicon ribbon growth, 178,179 film (re-)crystallization, [180][181][182] and silicon epitaxial growth, [183][184][185][186][187][188][189] possibly combined with lift-off, controlled spalling or other techniques to detach thin silicon absorbers from a thicker substrate 190,191 or growth template. 192,193 Several strategies have been developed to increase light coupling in ultra-thin silicon (o50 mm) and fabricate solar cells from such material.…”
Section: Wafer Crystallinity and Conductivity Typementioning
confidence: 99%
“…2 In recent years, a-Si:H layers also garnered significant attention, thanks to their excellent crystalline silicon (c-Si) surface passivation properties, even when only a few nm thin. [3][4][5][6][7][8] This property is exploited with remarkable success for passivating-contact fabrication in silicon heterojunction (SHJ) solar cells, [9][10][11][12][13][14][15][16][17][18][19][20][21][22] with reported conversion cell efficiencies as high as 26.3%. 23 For any solar cell technology, an important criterion for ultimate device performance is its stability under prolonged light exposure.…”
mentioning
confidence: 99%
“…Alternatively, kerfless approaches are also actively pursued by combining epitaxially grown silicon substrates with a lift‐off process. Excellent electronic material quality on large surfaces can be achieved as evidenced by the fabrication of 22.5% efficient SHJ cells that are 243.4 cm 2 in size …”
Section: Discussion and Outlookmentioning
confidence: 99%