High Efficiency GaN FET Based Three Port Halfbridge Converter

Duong, Anh Tuan; Nguyen, P.; Vu, P.; Pho, Bao Binh; Vu, Dai Duong; Bui, Quang Dang

doi:10.1109/icsse.2019.8823327

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2020

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“…Since the switching frequency is high, i.e., 500kHz in this case, the printed board circuit (PCB) design plays a very important role in suppressing the ringing loop which may cause serious problem such as electromagnetic interference (EMI) noise or over voltage [21]. In TPHBC-SR design, there are two important ringing loops, i.e., Driver-GaN loop and power ringing loop including input capacitors and switches.…”

Section: Experiments Resultsmentioning

confidence: 99%

ZVS based on dead-time analysis of three port half bridge converters

Nguyen

Pham

2020

IJPEDS

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In this research, the zero-voltage switching (ZVS) of the GaN FETs-based high frequency three-port half-bridge converter (TPHBC), which is capable of interfacing a renewable energy source, an energy storage and a load is discussed. To achieve ZVS, which plays a key role in power loss reduction of the high switching frequency converters, not only the parasitic elements but also the dead-time between two switches in one converter arm must be taken into account. This research gives a detail analysis about the influence of the dead-time on the ZVS condition. Based on the analysis, a minimum dead-time which guarantees not only the ZVS but also the safe operation of the converter is obtained. Simulations in various load condition of the TPHBC are carried out to verify the validity and effectiveness of the proposed method.

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Section: Experiments Resultsmentioning

confidence: 99%