High-Efficiency GaN/AlxGa1?xN Multi-Quantum-Well Light Emitter Grown on Low-Dislocation Density AlxGa1?xN

Iwaya, Motoaki; Terao, S.; Sano, Tomoaki; Takanami, S.; Ukai, T.; Nakamura, Ryozo; Kamiyama, Satoshi; Amano, Hiroshi; Akasaki, Isamu

doi:10.1002/1521-396x(200111)188:1<117::aid-pssa117>3.0.co;2-x

Cited by 69 publications

(13 citation statements)

References 13 publications

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“…But it is overwhelmingly more likely that a high-quality lattice-matched or nearly-lattice-matched substrate will be needed. [35][36][37][38] Two possible such substrates are being considered.…”

Section: Single-crystal Substratesmentioning

confidence: 96%

Ultrawide‐Bandgap Semiconductors: Research Opportunities and Challenges

Tsao

Chowdhury

Hollis

et al. 2017

Adv Elect Materials

976

463

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Section: Single-crystal Substratesmentioning

confidence: 96%

Ultrawide‐Bandgap Semiconductors: Research Opportunities and Challenges

Tsao

Chowdhury

Hollis

et al. 2017

Adv Elect Materials

976

463

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“…In contrast, such a high dislocation density is one of the most serious problems for AlGaN-based UV emitters because emission efficiency is strongly affected by dislocations. 7) Hence, it is necessary to reduce the number of these dislocations. In addition, it has been considered that emission efficiency is also strongly influenced by unexpected impurities or point defects.…”

Section: Introductionmentioning

confidence: 99%

Dislocations in AlN Epilayers Grown on Sapphire Substrate by High-Temperature Metal-Organic Vapor Phase Epitaxy

Imura¹,

Nakano²,

Fujimoto³

et al. 2007

jjap

102

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The growth temperature of AlN layers is one of the most important factors in metal-organic vapor phase epitaxy (MOVPE) growth. AlN layers were grown using our customized high-temperature MOVPE system. The crystalline quality was discussed on the basis of X-ray diffraction, atomic force microscopy (AFM) and transmission electron microscopy (TEM) measurements. The samples grown at a temperature of 1400 C had much improved crystalline quality in terms of the X-ray rocking curve full width at half maximum values and AFM root-mean-square roughness. In addition, according to TEM analysis, edge type dislocations caused by small-angle grain boundaries were predominant under a low growth temperature, whereas these dislocations became much fewer with increasing growth temperature.

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“…The emission efficiency of the GaNbased active layer has been reported to be highly dependent on the dislocation density (DD). 9,10) However, the emission efficiency of the AlGaN alloy has not been investigated in detail. In particular, the AlN molar fraction dependence is not well known.…”

mentioning

confidence: 99%

Internal Quantum Efficiency of Whole-Composition-Range AlGaN Multiquantum Wells

Ban

Yamamoto

Takeda

et al. 2011

Appl. Phys. Express

264

186

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We analyze the internal quantum efficiency (IQE) of whole-composition-range AlGaN multiquantum wells (MQWs) on AlGaN with various dislocation densities (DDs) by excitation-density-dependent photoluminescence measurement. IQEs of deep ultraviolet/ultraviolet (DUV/UV) MQWs are strongly dependent on the DD. IQE with an excess carrier density of 1×1018 cm-3 changes from 4 to 64% when the DD changes from 6×109 to 2×108 cm-2. This trend is almost the same for DUV/UV MQWs with emission wavelength ranging from 230 to 350 nm. Thus, the reduction of the DD is very important for the realization of a high-IQE DUV/UV active layer.

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High-Efficiency GaN/AlxGa1?xN Multi-Quantum-Well Light Emitter Grown on Low-Dislocation Density AlxGa1?xN

Cited by 69 publications

References 13 publications

Ultrawide‐Bandgap Semiconductors: Research Opportunities and Challenges

Ultrawide‐Bandgap Semiconductors: Research Opportunities and Challenges

Dislocations in AlN Epilayers Grown on Sapphire Substrate by High-Temperature Metal-Organic Vapor Phase Epitaxy

Internal Quantum Efficiency of Whole-Composition-Range AlGaN Multiquantum Wells

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