High Efficiency Cu2MnSnS4 Thin Film Solar Cells with SnS BSF and CdS Etl Layers: A Numerical Simulation

Evaluating the performance of efficient Cu2NiSnS4 solar cell—A two stage theoretical attempt and comparison to experiments

“…It can further be found that FF is somewhat decreased for further increasing the HTL thickness, this is because of the increase in resistance at back surface in the heterojunction. This behaviors in PV parameters as a function of HTL thickness have consistency with a slight variations in device outputs realized when the thickness of back surface passivation layer is varied in the range from 0.05 to 0.3 μm in the previous researches [ 12 , 43 , 44 , [77] , [78] , [79] ]. Hence, in this study, a thin HTL with thickness of 0.1 μm is selected to avoid cost and recombination as the thick HTL in the PV cell demands more materials and offers high contact resistance for carrier transmission.…”

“…8 (a), slight increase in J SC and V OC are observed with growing the HTL thickness. It can be implied that the declining rate of photo-induced carrier recombination in the effective extent of the solar cell would results in the enhancements of J SC and V OC with enlarging the thickness of HTL [ 12 ], thereby increasing the conversion efficiency of the PV device slightly. Also, the high energetic photons unabsorbed in the thin CNTS absorber layer may be absorbed by the MoO 3 HTL, which gives an additional advance in the device performances [ 42 ].…”

“…However, high fabrication expense with high-temperature processing of the silicon (Si) wafers limits the mass production of the Si-based photovoltaic (PV) cells. Thin-film solar cells (TFSCs) utilizing semiconductor material-based very thin layers have much attracted in the scientific community for applications of the PV technology [ [8] , [9] , [10] , [11] , [12] ]. There are numerous benefits of the thin-film heterojunction PV devices such as excellent flexibility, lightweight, remarkable electrical and optical features, ease of scaling than the process flow needed by the silicon-based PV structures, low production costs, and high PCE [ 8 , 9 , [13] , [14] , [15] ].…”

Investigation of a novel inorganic cubic perovskite Ca3PI3 with unique strain‐driven optical, electronic, and mechanical properties

“…The bandgap of the materials used in the active layer has a significant impact on the PCE of a solar cell, as it plays a pivotal role in light absorption and carrier generation. [30,31] The Shockley-Queisser theory suggests that perovskite solar cells can attain a PCE of 33% if the bandgap of perovskite substance is fine-tuned within the range of 1.2-1.4 eV. [32] One disadvantage of IHP materials, despite their usefulness in optoelectronics and PVs, is that they have a slightly elevated bandgap.…”

Achieving above 24% efficiency with non-toxic CsSnI3 perovskite solar cells by harnessing the potential of the absorber and charge transport layers

“…The SCAPS-1D soware was introduced by Professor M. Burgelman at the University of Gent and has been used to simulate different solar cell congurations. [51][52][53][54][55][56][57][58][59] The SCAPS-1D simulator uses fundamental semiconductor equations, in terms of the Poisson equations (eqn 1), and continuity equations for excitons (electrons and holes). 60,61…”