High efficiency Bi<sub>2</sub>Te<sub>3</sub>-based materials and devices for thermoelectric power generation between 100 and 300 °C

Feng, Hao; Qiu, Pengfei; Tang, Yuyan; Bai, Shengqiang; Xing, Tong; Chu, Hsu-Shen; Qihao, Zhang; Lü, Ping; Zhang, Tiansong; Ren, Dudi; Chen, Jikun; Chen, Lidong

doi:10.1039/c6ee02017h

Cited by 404 publications

(355 citation statements)

References 39 publications

Supporting

Mentioning

323

Contrasting

Unclassified

Order By: Relevance

“…The concentration of excited minor carriers could be described by the following expression: [19] For a semiconductor with the narrow band gap, the minor www.advelectronicmat.de carriers are easy to be excited to the conduction band and take part in the electrical transport, leading to the obvious deterioration of the Seebeck coefficient.…”

Section: Thermoelectric Transport Behavior Of the Mg Dopedmentioning

confidence: 99%

“…As the Bi 0.5 Sb 1.5 Te 3 analogue, binary Sb 2 Te 3 possesses the same preparation technology and has been investigated for decades as a promising p-type medium temperature thermoelectric material due to larger band-gap (0.2 eV) and higher melting point (903 K). [17b,18] For example, acceptor doping, such as Ag, Cu, Cd, [19] and Mn, [20] in p-type Bi 0.5 Sb 1.5 Te 3 increases the carrier concentration, thereby leading to higher average ZT value at relative wider temperature range than the pristine due to the delaying appearance of intrinsic excitation, and high conversion efficiency of 6.0% under a temperature difference of 217 K is obtained. However, for the Bi 0.5 Sb 1.5 Te 3 and Sb 2 Te 3 , their thermoelectric performance rapidly deteriorates with increasing the temperature due to the intrinsic excitation, leading to the operating temperature with high ZT value which is relatively narrow.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Realizing Excellent Thermoelectric Performance of Sb₂Te₃ Based Segmented Leg with a Wide Temperature Range Using One‐Step Sintering

Xie

Qin

Zhu

et al. 2019

Adv Elect Materials

View full text Add to dashboard Cite

To achieve a wide temperature range and a high figure‐of‐merit, segmented assembling is considered as the most effective method based on optimized low‐temperature and medium‐temperature thermoelectric materials. In this work, divalent magnesium (Mg) as acceptor doping in both Bi0.5Sb1.5Te3 and indium (In) alloyed Sb2Te3 play an important role in improving thermoelectric performance, including enhanced power factor by balancing the electrical conductivity and Seebeck coefficient, reduced bipolar thermal conductivity by delaying occurrence of intrinsic excitation, and reduced lattice thermal conductivity due to point defects. Finally, both the figure‐of‐merit (ZT) value and the corresponding operating temperature range are improved. Typically, Mg0.01Bi0.5Sb1.49Te3 with a ZTave of 1.16 from 300 to 520 K and a ZTave of 0.84 for Mg0.02In0.1Sb1.88Te3 from 500 to 680 K are obtained. To further obtain wide‐temperature high ZT value, p‐type Mg0.01Bi0.5Sb1.49Te3/Mg0.02In0.1Sb1.88Te3 segmented leg with excellent interface bonding and extremely low contact resistivity is successfully fabricated by only one‐step sintering process. The corresponding average ZT value is up to 1.02 with a broad temperature range from 300 to 680 K, and a maximum theoretical conversion efficiency of 12.7% with a temperature difference of 380 K is obtained. This provides guidelines for high efficiency thermoelectric devices.

show abstract

Section: Thermoelectric Transport Behavior Of the Mg Dopedmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Realizing Excellent Thermoelectric Performance of Sb₂Te₃ Based Segmented Leg with a Wide Temperature Range Using One‐Step Sintering

Xie

Qin

Zhu

et al. 2019

Adv Elect Materials

View full text Add to dashboard Cite

show abstract

“…6 and 12-14) present excellent thermoelectric performance and have been put into commercial applications, which are well known as the most efficient thermoelectric materials operating near room temperature. 15,16 According to literature reports, the Bi 0. 5 …”

Section: Introductionmentioning

confidence: 99%

Significantly enhanced thermoelectric performance of Cu-doped p-type Bi_0.5Sb_1.5Te₃ by a hydrothermal synthesis method

et al. 2017

View full text Add to dashboard Cite

Cu-doped p-type Bi 0.5 Sb 1.5 Te 3 compounds have been prepared by a facile hydrothermal method. X-ray powder diffraction analysis shows that the lattice parameter decreases with the Cu content, indicating that Cu + ions are distributed on the crystal site of Bi/Sb, which is further confirmed by the p-type conducting behavior of the Cu-doped Bi 0.5 Sb 1.5 Te 3 . With the addition of Cu, the hole carrier concentration increases, and meanwhile the lattice thermal conductivity decreases. Furthermore, the greatly raised hole carrier concentration effectively suppresses the bipolar effect, which is beneficial for improving the thermoelectric properties. A dimensionless thermoelectric figure of merit (ZT) value of $1.2 at room temperature is achieved for the sample with 0.6 wt% Cu (nominal composition), and the ZT value increases with the temperature to $1.5 at 150 C. Cu-doped Bi 0.5 Sb 1.5 Te 3 samples exhibit most excellent thermoelectric performance among the presently available (Bi,Sb) 2 Te 3 -based materials, implying great potential as near room temperature thermoelectric materials.

show abstract

“…The mesh independency test was also performed to ensure that the numerical results are independent of the grid sizes. Lastly, in order to validate the finite element model, the numerical results were compared against the experimental results provided in Hao et al [55]. Figure 1a,b depicts the comparison between the experimental and numerical results.…”

Section: Finite Element Analysismentioning

confidence: 99%

Combinatory Finite Element and Artificial Neural Network Model for Predicting Performance of Thermoelectric Generator

2018

View full text Add to dashboard Cite

Thermoelectric generators (TEGs) are rapidly becoming the mainstream technology for converting thermal energy into electrical energy. The rise in the continuous deployment of TEGs is related to advancements in materials, figure of merit, and methods for module manufacturing. However, rapid optimization techniques for TEGs have not kept pace with these advancements, which presents a challenge regarding tailoring the device architecture for varying operating conditions. Here, we address this challenge by providing artificial neural network (ANN) models that can predict TEG performance on demand. Out of the several ANN models considered for TEGs, the most efficient one consists of two hidden layers with six neurons in each layer. The model predicted TEG power with an accuracy of ±0.1 W, and TEG efficiency with an accuracy of ±0.2%. The trained ANN model required only 26.4 ms per data point for predicting TEG performance against the 6.0 minutes needed for the traditional numerical simulations.Energies 2018, 11, 2216 2 of 17 in the Thomson heat, which is proportional to the electric current and absorbed or released based on the direction of the current [4].Continuous efforts have been made toward developing high performance n-type and p-type thermoelectric (TE) materials [1,[7][8][9]. The performance of TE materials is measured in terms of a dimensionless metric called the figure of merit, which is denoted as ZT. It combines three key material properties: thermal conductivity (κ), electrical resistivity (ρ), and the Seebeck coefficient (S), along with the absolute temperature (T), and it is given as ZT = S 2 κρ T [10,11]. The magnitude of ZT for most of the commercial thermoelectric materials is close to unity; however, recent studies have reported higher values for some of the state-of-the-art TE materials, such as a quantum-dot superlattice with ZT~3.5 at 575 K [12], a superlattice structure with ZT~2.4 at 300 K and ZT~2.9 at 400 K [13], and lead antimony silver telluride with ZT~2.2 at 800 K [14]. The thermoelectric modules built using nanostructured materials have been reported to exhibit thermal-to-electrical energy conversion efficiency up to 10% at a temperature difference of 500 K [15].The performance of TEG modules depends not only on the ZT of the TE material, but also on the geometric dimensions of the thermocouples and operating conditions such as the temperature difference and electrical load [16,17]. Several researchers in the past have attempted to optimize p-n leg geometry comprising of length, a cross-sectional area, and the number of thermocouples [18][19][20][21]. A few studies have attempted to provide optimal shape factor parameters such as the area ratio for p-n legs (Ap/An), the aspect ratio (leg length/leg area), and the slenderness ratio ((Ap/Lp)/(An/Ln), where Ap and An denote base area and Lp and Ln denote length of p-and n-type legs) [22,23]. However, these parameter changes depend upon the TE material used for fabricating TEG legs, the materials used in assembling the TEG modules, and oper...

show abstract

High efficiency Bi₂Te₃-based materials and devices for thermoelectric power generation between 100 and 300 °C

Abstract: High efficiency Bi2Te3-based thermoelectric materials and devices with energy conversion efficiencies of up to 6.0% under a temperature gradient of 217 K.

Cited by 404 publications

References 39 publications

Realizing Excellent Thermoelectric Performance of Sb₂Te₃ Based Segmented Leg with a Wide Temperature Range Using One‐Step Sintering

Realizing Excellent Thermoelectric Performance of Sb₂Te₃ Based Segmented Leg with a Wide Temperature Range Using One‐Step Sintering

Significantly enhanced thermoelectric performance of Cu-doped p-type Bi_0.5Sb_1.5Te₃ by a hydrothermal synthesis method

Combinatory Finite Element and Artificial Neural Network Model for Predicting Performance of Thermoelectric Generator

Contact Info

Product

Resources

About

High efficiency Bi2Te3-based materials and devices for thermoelectric power generation between 100 and 300 °C

Abstract: High efficiency Bi2Te3-based thermoelectric materials and devices with energy conversion efficiencies of up to 6.0% under a temperature gradient of 217 K.

Cited by 404 publications

References 39 publications

Realizing Excellent Thermoelectric Performance of Sb2Te3 Based Segmented Leg with a Wide Temperature Range Using One‐Step Sintering

Realizing Excellent Thermoelectric Performance of Sb2Te3 Based Segmented Leg with a Wide Temperature Range Using One‐Step Sintering

Significantly enhanced thermoelectric performance of Cu-doped p-type Bi0.5Sb1.5Te3 by a hydrothermal synthesis method

Combinatory Finite Element and Artificial Neural Network Model for Predicting Performance of Thermoelectric Generator

Contact Info

Product

Resources

About

High efficiency Bi₂Te₃-based materials and devices for thermoelectric power generation between 100 and 300 °C

Realizing Excellent Thermoelectric Performance of Sb₂Te₃ Based Segmented Leg with a Wide Temperature Range Using One‐Step Sintering

Realizing Excellent Thermoelectric Performance of Sb₂Te₃ Based Segmented Leg with a Wide Temperature Range Using One‐Step Sintering

Significantly enhanced thermoelectric performance of Cu-doped p-type Bi_0.5Sb_1.5Te₃ by a hydrothermal synthesis method