High efficiency angular deflection of the laser beam: PLZT/intracavity array

Alekseev, V. N.; Liber, V. I.; Starikov, A D; Anspoks, Andris; Auzins, E.; Klotins, E.; Kotleris, J.

doi:10.1080/00150199208223430

Cited by 8 publications

(1 citation statement)

References 2 publications

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“…Finally, we must emphasize that understanding where the impurity levels are located in the band gap, how these levels change their position with a change in the charge state of the impurity ion and how they are located in relation to each other, as well as in relation to point defects ( F -centers)—all this is very important for an accurate and detailed description of the processes of photo- and thermally stimulated conversion of point defects in wide-gap halides, oxides and perovskites [ 62 , 63 , 64 , 65 , 66 , 67 , 68 , 69 , 70 , 71 , 72 , 73 , 74 , 75 , 76 ].…”

Section: Resultsmentioning

confidence: 99%

First Principles Calculations of Atomic and Electronic Structure of TiAl3+- and TiAl2+-Doped YAlO3

et al. 2021

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In this paper, the density functional theory accompanied with linear combination of atomic orbitals (LCAO) method is applied to study the atomic and electronic structure of the Ti3+ and Ti2+ ions substituted for the host Al atom in orthorhombic Pbnm bulk YAlO3 crystals. The disordered crystalline structure of YAlO3 was modelled in a large supercell containing 160 atoms, allowing simulation of a substitutional dopant with a concentration of about 3%. In the case of the Ti2+-doped YAlO3, compensated F-center (oxygen vacancy with two trapped electrons) is inserted close to the Ti to make the unit cell neutral. Changes of the interatomic distances and angles between the chemical bonds in the defect-containing lattices were analyzed and quantified. The positions of various defect levels in the host band gap were determined.

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