High-efficiency and compact semiconductor lasers with monolithically integrated switches for generation of high-power nanosecond pulses in time-of-flight (TOF) systems

Lasers-thyristors with a narrow (20 μm) mesa stripe contact have been studied. It was shown that the laser peak power reaches a value of 2.5 W in the long-pulse mode at a pulse width of 13 ns. It was demonstrated that generation of a controlled train of laser pulses with peak power of 1.6 W and width of 90 ps is possible in the short-pulse mode. The maximum value of the pulse repetition frequency was 470 kHz at the following working characteristics of the laser-thyristor: blocking voltage 5.8 V, control current pulse 25 mA. A number of specific features were observed in the short-pulse mode. It was found that the blocking voltage and amplitude of the control current pulse affect the lasing process. We observed that in short pulse mode the lasing spectra have a two-band structure and the lateral near field may degenerate into a single spot with size substantially smaller than the mesa stripe width. It was shown that the main reason for the observed specific features of lasing is the clearly pronounced effect of the spatial localization of the current.

show abstract

Generation of nanosecond and subnanosecond laser pulses by AlGaAs/GaAs laser-thyristor with narrow mesa stripe contact

Сліпченко

Podoskin

Soboleva

et al. 2016

Opt. Express

View full text Add to dashboard Cite

show abstract

scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.

Contact Info

hi@scite.ai

10624 S. Eastern Ave., Ste. A-614

Henderson, NV 89052, USA

Blog Terms and Conditions API Terms Privacy Policy Contact Cookie Preferences Do Not Sell or Share My Personal Information

Made with 💙 for researchers

Part of the Research Solutions Family.

High-efficiency and compact semiconductor lasers with monolithically integrated switches for generation of high-power nanosecond pulses in time-of-flight (TOF) systems

Cited by 1 publication

References 2 publications

Generation of nanosecond and subnanosecond laser pulses by AlGaAs/GaAs laser-thyristor with narrow mesa stripe contact

Generation of nanosecond and subnanosecond laser pulses by AlGaAs/GaAs laser-thyristor with narrow mesa stripe contact

Contact Info

Product

Resources

About