High-Efficiency All-Solution-Processed Light-Emitting Diodes Based on Anisotropic Colloidal Heterostructures with Polar Polymer Injecting Layers

Castelli, Andrea; Meinardi, Francesco; Pasini, Mariacecilia; Galeotti, Francesco; Pinchetti, Valerio; Lorenzon, Monica; Manna, Liberato; Moreels, Iwan; Giovanella, Umberto; Brovelli, Sergio

doi:10.1021/acs.nanolett.5b01849

Cited by 72 publications

(101 citation statements)

References 79 publications

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“…To solve these issues, the type (ii) device (QD layers sandwiched between organic HTLs and ETLs) was proposed. [79][80][81][82][83][84] The peak EQE of the initial type (ii) device was~0.5% and has been improved to 6% (Fig. 3d, e).…”

Section: Device Structure and Operation Principles Of Qledsmentioning

confidence: 95%

Flexible quantum dot light-emitting diodes for next-generation displays

et al. 2018

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In the future electronics, all device components will be connected wirelessly to displays that serve as information input and/or output ports. There is a growing demand of flexible and wearable displays, therefore, for information input/output of the nextgeneration consumer electronics. Among many kinds of light-emitting devices for these next-generation displays, quantum dot light-emitting diodes (QLEDs) exhibit unique advantages, such as wide color gamut, high color purity, high brightness with low turn-on voltage, and ultrathin form factor. Here, we review the recent progress on flexible QLEDs for the next-generation displays. First, the recent technological advances in device structure engineering, quantum-dot synthesis, and high-resolution full-color patterning are summarized. Then, the various device applications based on cutting-edge quantum dot technologies are described, including flexible white QLEDs, wearable QLEDs, and flexible transparent QLEDs. Finally, we showcase the integration of flexible QLEDs with wearable sensors, micro-controllers, and wireless communication units for the next-generation wearable electronics.

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Section: Device Structure and Operation Principles Of Qledsmentioning

confidence: 95%

Flexible quantum dot light-emitting diodes for next-generation displays

et al. 2018

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“…For the fabrication of CdSe/CdS DiRs EL LEDs, in 2005, R. A. M. Hikmet et al, firstly fabricated DiRs EL LEDs, however, the devices were poorly performed at that time. Up to now, the highest external quantum efficiency (EQE) and luminance of red CdSe/CdS DiRs EL LEDs achieved were 6.1% and 8552 cd/m 2 , respectively [21][22]. However, there is no report on the green CdSe/CdS DiRs EL LEDs.…”

Section: Introductionmentioning

confidence: 97%

P‐122: High Quantum Yield Green and Red CdSe/CdS Dot‐in‐Rods and Their Electroluminescent Light Emitting Diodes

Zhou

Liu

Hao

et al. 2019

Symp Digest of Tech Papers

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We successfully synthesized CdSe/CdS dot-in-rods (DiRs) with a high quantum yield (QY, 70% and 65% for green and red). And these DiRs were further utilized to fabricate DiRs electroluminescent (EL) light emitting diodes (LEDs), as the first-time report for green LED and record-high performance for red LED. This kind of DiRs can be utilized for high efficiency and color gamut display technologies. Author KeywordsDot-in-rods; quantum yield; electroluminescence; light emitting diodes.

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“…changing QD components, new synthesis technique for gradient shell, changing QD shape for higher light extraction efficiency and so on. [7][8][9][10] Tandem architecture for OLED has been studied to improve device efficiency and operating lifetime. [11][12][13] A typical tandem OLEDs are designed by connecting two OLED via charge generation layer (CGL) which can be formed using a thermal evaporation method.…”

Section: Introductionmentioning

confidence: 99%