High-efficiency Al<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" id="mml59" display="inline" overflow="scroll" altimg="si11.gif"><mml:msub><mml:mrow/><mml:mrow><mml:mi>x</mml:mi></mml:mrow></mml:msub></mml:math>Ga<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" id="mml60" display="inline" overflow="scroll" altimg="si12.gif"><mml:msub><mml:mrow/><mml:mrow><mml:mn>1</mml:mn><mml:mo>−</mml:mo><mml:mi>x</mml:mi></mml:mrow></mml:msub></mml:math>As/GaAs cathode for photon-enhanced thermionic em

Feng, Cheng; Zhang, Yijun; Qian, Yunsheng; Wang, Ziheng; Liu, Jian; Chang, Benkang; Shi, Feng; Jiao, Gangcheng

doi:10.1016/j.optcom.2017.12.027

Cited by 30 publications

(12 citation statements)

References 27 publications

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“…where g i (y) represents the photoelectron generation function in each Al x Ga 1Àx As sublayer and is expressed as [28,29]:…”

Section: Photoemission Model Derivation and Simulation 31 Photoemismentioning

confidence: 99%

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Energy Bandgap Engineering of Transmission-Mode AlGaAs/GaAs Photocathode

Zhang¹,

Jiao²

2018

Photodetectors [Working Title]

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Aiming to enhance the photoemission capability in the waveband region of interest, a graded bandgap structure was applied to the conventional transmission-mode AlGaAs/ GaAs photocathodes based on energy bandgap engineering, wherein the composition in Al x Ga 1Àx As window layer and the doping concentration in GaAs active layer were gradual. According to Spicer's three-step model, a photoemission theoretical model applicable to the novel transmission-mode Al x Ga 1Àx As/GaAs photocathodes was deduced so as to guide the cathode structural design. Then the cathode material was grown by the metalorganic chemical vapor deposition technique, and the epitaxial cathode material quality was evaluated by the means of scanning electron microscope, electrochemical capacitance-voltage, X-ray diffraction and spectrophotometry. Through a series of specific processes, the cathode material was made into the multilayered module, possessing a glass/Si 3 N 4 /Al x Ga 1Àx As/GaAs structure. After the surface treatment including heat cleaning and Cs▬O activation for the cathode module, the image intensifier tube comprising the activated cathode module, microchannel plate, and phosphor screen was fabricated by indium sealing. The spectral response test results confirm the validity of the novel structure for the enhancement of blue-green photoresponse.

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“…where g i (y) represents the photoelectron generation function in each Al x Ga 1Àx As sublayer and is expressed as [28,29]:…”

Section: Photoemission Model Derivation and Simulation 31 Photoemismentioning

confidence: 99%

“…The excess electron concentration in the former sublayer should contribute to the latter sublayer, accordingly, the boundary conditions adequate for each sublayer are expressed as [28,29]:…”

Section: Photoemission Model Derivation and Simulation 31 Photoemismentioning

confidence: 99%

Energy Bandgap Engineering of Transmission-Mode AlGaAs/GaAs Photocathode

Zhang¹,

Jiao²

2018

Photodetectors [Working Title]

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“…1 Since the PETE devices are proposed, extensive efforts have been devoted to investigate the photoelectric conversion models, cathode materials, and complex structures. [6][7][8] However, the research on the anode is rarely reported.…”

Section: Introductionmentioning

confidence: 99%

Exploring n‐type SiC film with ultralow work function Cs coating surface for solar cell anode

2021

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In this study, the Cs adsorption behavior on n-type 3C-SiC (0001)-(2 × 1) and-(3 × 2) reconstructed surfaces are investigated via first-principles calculations. The potentiality of 3C-SiC as the anode material of solar cell based on photonenhanced thermionic emission (PETE) is discussed. Various doping configurations are considered for the determination of an optimum n-type doping structure. Cs-covered (3 × 2) surface exhibits stronger stability compared with (2 × 1) surface. The charge transfer caused by Cs adsorption produces a [Cs +-SiC] dipole moment directing from Cs adatom to reconstructed surface, resulting in an effective declination of work function. Specifically, 0.5 ML Cs coverage surface provides an ultralow work function with 0.9 eV, demonstrating its potential application in PETE devices. Combining with a photoemission model, the maximum conversion efficiency can attain 30% utilizing SiC as an anode. Moreover, the Mulliken charge analysis provides the details of surface charge transfer and implies the inner mechanism of work function alteration. This study provides guiding significance for the synthesis of SiC material with low work function and an effective theoretical method for the design of highperformance anode materials in application of PETE devices. The adsorption mechanism of Cs on n-type doped 3C-SiC(0001)-(2 × 1) and-(3 × 2) reconstructed surfaces and its application as the anode material of solar cell are systematically investigated. For one Cs adatom adsorption, Cs-covered (3 × 2) surfaces present stronger stability compared with (2 × 1) surfaces. Csdecorated (3 × 2) surface with 0.5 ML coverage exhibits an ultralow work function as low as 0.9 eV. Based on the photoemission model, the maximum conversion efficiency of PETE devices with SiC anode can reach 30%. Highlights • Cs-decorated SiC surfaces with ultralow work function are suitable as PETE anode materials. • Cs adsorption mechanism on 3C-SiC(0001)-(2 × 1) and-(3 × 2) surfaces are explored. • The optimum n-type doped (2 × 1) and (3 × 2) surfaces are, respectively, determined.

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“…Initially, in order to solve the lattice mismatch problem between the AlGaN emission layer and the AlN buffer layer, which causes the photoelectrons to recombine and shortens the electron lifetime, a buffer layer structure with graded Al composition is proposed . Then, the graded compositional Al x Ga 1−x N structure classifies the bandgap of the photocathode and generates a built‐in electric field inside the material, which can reduce the surface recombination loss and promote the photoelectrons to the surface of the emissive layer for the enhancement of quantum efficiency …”

Section: Introductionmentioning

confidence: 99%

“…In addition, the powerful axial built‐in electric field induced by the gradient bandgap material can effectively reduce the lateral emission phenomenon caused by the electron emission from the side of the nanowire array structure, which prevents electron emission angle divergence and spatial resolution degradation . The gradient bandgap structure has been introduced into photon‐enhanced thermal electron emission devices and UV detector devices to enhance electron emission from the top surface of the photocathode . Currently, we have designed a feasible method to prepare graded composition Al x Ga 1−x N nano‐cone array.…”

Section: Introductionmentioning

confidence: 99%

The effective light‐harvesting performance of graded compositional Al _x Ga _1−x N nano‐cone arrays photocathode for ultraviolet detector—A numerical investigation and simulation

Liu

Zhangyang

et al. 2020

Int J Energy Res

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A graded compositional Al x Ga 1−x N nanomaterial with a built-in electric field has been proposed to improve the quantum efficiency of the negative electronic affinity photocathode. When the graded compositional Al x Ga 1−x N nano-cone array is applied to the ultraviolet (UV) detector, it is necessary to improve the effective light absorption, which is high absorption in the UV short-wavelength and high sensitivity in the threshold wavelength. Therefore, the light absorption of nano-cone arrays with different feature sizes and geometrical properties is accurately calculated innovatively based on the finite-difference time-domain method. Studies show that a non-close-packed six-sided pyramid structure with a fill factor of 42.44% and a height of 1000 nm has an absorption spectrum that better satisfies the response characteristics of the UV detector. Surface reflection depends to a large extent on the transformation of the angle of incidence. The optical absorption properties of the graded compositional Al x Ga 1−x N nano-cone array provide flexibility and reference value for the improvement of the absorption coefficient and other parameters in the actual quantum efficiency experiment of the UV photocathode with built-in electric field, which can realize the highest sensitivity of various designed UV detector optical system.

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High-efficiency AlxGa1−xAs/GaAs cathode for photon-enhanced thermionic em

Cited by 30 publications

References 27 publications

Energy Bandgap Engineering of Transmission-Mode AlGaAs/GaAs Photocathode

Energy Bandgap Engineering of Transmission-Mode AlGaAs/GaAs Photocathode

Exploring n‐type SiC film with ultralow work function Cs coating surface for solar cell anode

The effective light‐harvesting performance of graded compositional Al _x Ga _1−x N nano‐cone arrays photocathode for ultraviolet detector—A numerical investigation and simulation

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High-efficiency AlxGa1−xAs/GaAs cathode for photon-enhanced thermionic em

Cited by 30 publications

References 27 publications

Energy Bandgap Engineering of Transmission-Mode AlGaAs/GaAs Photocathode

Energy Bandgap Engineering of Transmission-Mode AlGaAs/GaAs Photocathode

Exploring n‐type SiC film with ultralow work function Cs coating surface for solar cell anode

The effective light‐harvesting performance of graded compositional Al x Ga 1−x N nano‐cone arrays photocathode for ultraviolet detector—A numerical investigation and simulation

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The effective light‐harvesting performance of graded compositional Al _x Ga _1−x N nano‐cone arrays photocathode for ultraviolet detector—A numerical investigation and simulation