High efficiency 15&amp;#x2013;500MHz wideband cascode GaN HEMT MMIC amplifiers

Sardin, David; Popović, Zoya

doi:10.1109/mwsym.2014.6848594

Cited by 5 publications

(2 citation statements)

References 5 publications

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“…For higher-bandwidth signals expected in the near future, a UHF amplifier can assist the Buck converter by amplifying higher frequency signals efficiently. An example UHF cascode PA integrated in the same GaN process shown in Fig.6 exhibits above 80% P AE with high gain above 120MHz, and over 60% p to 400MHz [22]. Since all necessary parts of an integrated broadband X band supply-modulated P A have been demonstrated separately, the next step is full integration, which was recently accomplished and is briefly summarized below.…”

Section: Supply-modulated X-band Power Amplifiersmentioning

confidence: 99%

GaN power amplifiers with supply modulation

Popović

2015

2015 IEEE MTT-S International Microwave Symposium

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This paper discusses various supply-modulated power amplifier (SM-PA) architectures for amplifying high peak-to-average power ratio (P APR) signals, and implementations of such amplifiers in GaN technology in the X band frequency range, towards the high-frequency carriers and bandwidths for 5G. Specifically, 10-W MMIC GaN PAs with greater than 60% efficiency at 10GHz with efficient GaN supply modulators for signals with envelope bandwidths of several 100 MHz and PAPR up to 10dB are detailed. Other transmitter approaches for high PAPR broadband signals, such as outphasing transmitters and PAs with output harmonic injection are overviewed in the context of supply modulation, and the main technical challenges are discussed.

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Section: Supply-modulated X-band Power Amplifiersmentioning

confidence: 99%

GaN power amplifiers with supply modulation

Popović

2015

2015 IEEE MTT-S International Microwave Symposium

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“…One of these technologies is the Worldwide Interoperability for Microwave Access (WiMax), which can support a large number of users, provide high data rates and cover greater areas with a center frequency of 3.5 GHz (802.16 d). 1 This technology can provide a data rate up to 100 Mbps and a distance up to 70 km. 2 Such as other communication systems, low noise amplifier (LNA) represents an important stage of WiMax receiver.…”

Section: Introductionmentioning

confidence: 99%

A broadband hybrid GaN cascode low noise amplifier for WiMax applications

Jarndal

Bassal

2018

Int J RF Microw Comput Aided Eng

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This article reports a Microstrip design for low noise amplifier (LNA) using a packaged commercial GaN‐on‐SiC high electron mobility transistor (HEMT). A cascode configuration with an inter‐stage matching and an independent biasing technique was used. A lumped elements design was first developed, analyzed, and simulated in ADS. Then the design was implemented using microstrip technology and simulated using the momentum EM simulation in ADS. The LNA is easy to fabricate, has a low cost, and can be easily modified for other applications. The proposed GaN LNA showed a gain of 13.5 dB with a noise figure (NF) of 3 dB from 2.8 to 3.8 GHz.

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Single-Chip GaN X-Band MMIC Dynamic Supply PAs

Popović

2015

2015 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)

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High efficiency 15–500MHz wideband cascode GaN HEMT MMIC amplifiers

Cited by 5 publications

References 5 publications

GaN power amplifiers with supply modulation

GaN power amplifiers with supply modulation

A broadband hybrid GaN cascode low noise amplifier for WiMax applications

Single-Chip GaN X-Band MMIC Dynamic Supply PAs

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