High Effective Gummel Number of CVD Boron Layers in Ultrashallow $\hbox{p}^{+}\hbox{n}$ Diode Configurations

Sarubbi, F.; Nanver, L.K.; Scholtes, T.L.M.

doi:10.1109/ted.2010.2045672

Cited by 55 publications

(79 citation statements)

References 24 publications

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“…What this chapter demonstrates is near ideal 1 , highly sensitive, radiation-hard, low leakage current diode characteristics. Moreover, since the boron deposition is conformal and highly selective to Si, PureB technology is shown to be an attractive candidate for creating junctions on silicon nanowires and advanced CMOS transistors including a source/drain in p-type FinFETs.…”

Section: Introductionmentioning

confidence: 86%

“…This reaction releases hydrogen from the Si and/or B surface sites as H 2 and leaves Si and/or B sites free for deposition. In this case, the deposition starts very fast, that is, after a few seconds of the surface being exposed to diborane gas under these conditions, and a monolayer of boron appears and covers the surface [1]. Figure 4 shows a schematic of the HT deposition mechanisms for the first few monolayers of boron layers when a Si surface is exposed to diborane.…”

Section: No Reaction a Descriptionmentioning

confidence: 99%

“…These wet spots readily form on mixed hydrophilic-hydrophobic surfaces during spinrinse drying, resulting in particle contamination from residues left behind after evaporation [23]. Unlike the 700°C deposition, for the 400°C deposition there was no in situ baking step [1]. Thus, the wafers were directly loaded into the pre-prepared reactor at the 400°C deposition temperature.…”

Section: Lt Boron Deposition At 400°cmentioning

confidence: 99%

“…To meet these demands, a new silicon detector technology has been proposed by TU Delft called "PureB" (pure boron) technology [1]. Conventional PureB technology is employed to fabricate high-performance photodiodes for vacuum/extreme/deep-UV (VUV/EUV/DUV) light, low-energy electrons down to 200 eV, and X-ray drift detectors [2][3][4][5].…”

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

Low‐Temperature PureB CVD Technology for CMOS Compatible Photodetectors

Mohammadi¹

2016

Chemical Vapor Deposition - Recent Advances and Applications in Optical, Solar Cells and Solid State Devices

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In this chapter, a new technology for low-temperature (LT, 400°C) boron deposition is developed, which provides a smooth, uniform, closed LT boron layer. This technology is successfully employed to create near-ideal LT PureB (pure boron) diodes with low, deep junction-like saturation currents, allowing full integration of LT PureB photodiodes with electronic interface circuits and other sensors on a single chip. In this way, smart-sensor systems or even charge-coupled device (CCD) or complementary metal oxide semiconductor (CMOS) ultraviolet (UV) imagers can be realised.

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Section: Introductionmentioning

confidence: 86%

Section: No Reaction a Descriptionmentioning

confidence: 99%

Section: Lt Boron Deposition At 400°cmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Low‐Temperature PureB CVD Technology for CMOS Compatible Photodetectors

Mohammadi¹

2016

Chemical Vapor Deposition - Recent Advances and Applications in Optical, Solar Cells and Solid State Devices

View full text Add to dashboard Cite

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“…This was evaluated by examining the out-diffusion of epitaxially grown Bdoped Si markers after long B-depositions at 700 ºC (Sarubbi et al, 2010b). Layers containing more than 10 17 cm -2 boron atoms were deposited, giving about 1 nm of boron silicidation at the interface, but the results gave no indication of TED effects.…”

Section: Nanometer-deep Junction Formation From α-Boron Layersmentioning

confidence: 99%

Silicon Photodiodes for Low Penetration Depth Beams such as DUV/VUV/EUV Light and Low-Energy Electrons

Nanver¹

2011

Advances in Photodiodes

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Optoelectrical Operation Stability of Broadband PureGaB Ge-on-Si Photodiodes with Anomalous Al-Mediated Sidewall Contacting

Krakers

Knežević

Nanver

2021

J. Electron. Mater.

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An anomalous aluminum-mediated material transport process was investigated in sets of Ge-on-Si photodiodes with broadband optoelectrical characteristics measured at wavelengths from 255 nm to 1550 nm. The diodes had “PureGaB” anode regions fabricated by depositing a Ga wetting layer capped with an 11-nm-thick B-layer on 0.5 µm-thick Ge islands grown on Si. The Al metallization was able to reach the Ge-Si interface through ~ 0.1-µm-wide holes inadvertently etched along the perimeter of the Ge-islands, and then traveled along the Ge-Si interface, displacing and recrystallizing Ge and Si. The rest of the Ge surface was protected from the Al contact metallization by the B-layer. For diodes that had received the standard 400°C Al alloying step, the responsivity was near-theoretical at 406 nm and 670 nm, but, at 1310 nm and 1550 nm, the proximity of Ge-Si interfacial defects caused significant attenuation. Extra annealing at 400°C or 500°C enhanced the formation of Si pits that were filled with modified Ge crystals alloyed with Si and p-doped with Al. All these diodes maintained low dark currents, below 50 µA/cm2 at 2 V reverse bias, but the responsivity was degraded, particularly for the long wavelengths. On the other hand, neither responsivity nor degradation of current–voltage (I–V) characteristics was observed for prolonged exposure to normal operating temperatures up to 100°C. Since the direct Al contacting of the Ge sidewalls does not degrade the dark current, for large diodes it could be a low-cost method of obtaining low contact resistance to an anode with p-type sidewall passivation and high fill-factor.

show abstract

High Effective Gummel Number of CVD Boron Layers in Ultrashallow $\hbox{p}^{+}\hbox{n}$ Diode Configurations

Cited by 55 publications

References 24 publications

Low‐Temperature PureB CVD Technology for CMOS Compatible Photodetectors

Low‐Temperature PureB CVD Technology for CMOS Compatible Photodetectors

Silicon Photodiodes for Low Penetration Depth Beams such as DUV/VUV/EUV Light and Low-Energy Electrons

Optoelectrical Operation Stability of Broadband PureGaB Ge-on-Si Photodiodes with Anomalous Al-Mediated Sidewall Contacting

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