2008
DOI: 10.1111/j.1551-2916.2008.02434.x
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High‐Dielectric‐Constant and Low‐Loss Microwave Dielectric in the (1−x)Nd(Zn1/2Ti1/2)O3xSrTiO3 System with a Zero Temperature Coefficient of Resonant Frequency

Abstract: High-dielectric-constant and low-loss ceramics in the (1Àx)Nd(Zn 1/2 Ti 1/2 )O 3 -xSrTiO 3 system have been prepared by the conventional mixed-oxide route and their microwave dielectric properties have been investigated. A two-phase system was confirmed by the X-ray diffraction patterns, the energy-dispersive X-ray spectrometer analysis, and the measured lattice parameters. Addition of SrTiO 3 , having a much smaller grain size in comparison with that of Nd(Zn 1/2 Ti 1/2 )O 3 , could effectively hold back abno… Show more

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Cited by 33 publications
(11 citation statements)
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References 18 publications
(20 reference statements)
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“…These materials, subject to applications at different frequency bands, can be grouped into three categories: (1) high‐ k materials ( k ∼80–100) but low Q × f s, such as BaO–Ln 2 O 3 –TiO 2 (Ln=La, Nd, Sm, etc. ) 1–4 ; (2) med‐ k materials ( k ∼40–50) with Q × f ∼30 000–80 000 GHz, such as Ba 2 Ti 9 O 20 , (Sn,Zr)TiO 4 , and Nd(Zn 1/2 Ti 1/2 )O 3 ‐SrTiO 3 5–7 ; and (3) extremely high‐ Q × f materials (>150 000 GHz) with k ∼15–30, such as Ba(Mg 1/3 Ta 2/3 )O 3 , Ba(Zn 1/3 Ta 2/3 )O 3 , Nd(Zn 1/2 Ti 1/2 )O 3 , and Nd(Co 1/2 Ti 1/2 )O 3 8–11 . However, due to the extension of the carrier frequency of interest in communication systems to a higher frequency range (such as millimeter wave), materials with high‐ k or med‐ k have become of less interest.…”
Section: Introductionmentioning
confidence: 99%
“…These materials, subject to applications at different frequency bands, can be grouped into three categories: (1) high‐ k materials ( k ∼80–100) but low Q × f s, such as BaO–Ln 2 O 3 –TiO 2 (Ln=La, Nd, Sm, etc. ) 1–4 ; (2) med‐ k materials ( k ∼40–50) with Q × f ∼30 000–80 000 GHz, such as Ba 2 Ti 9 O 20 , (Sn,Zr)TiO 4 , and Nd(Zn 1/2 Ti 1/2 )O 3 ‐SrTiO 3 5–7 ; and (3) extremely high‐ Q × f materials (>150 000 GHz) with k ∼15–30, such as Ba(Mg 1/3 Ta 2/3 )O 3 , Ba(Zn 1/3 Ta 2/3 )O 3 , Nd(Zn 1/2 Ti 1/2 )O 3 , and Nd(Co 1/2 Ti 1/2 )O 3 8–11 . However, due to the extension of the carrier frequency of interest in communication systems to a higher frequency range (such as millimeter wave), materials with high‐ k or med‐ k have become of less interest.…”
Section: Introductionmentioning
confidence: 99%
“…It implies that overheating the specimen may lead to an over‐grown TiO 2 grain, which would result in an abnormal grain growth. Moreover, by taking the apparent size difference in grains into consideration, a mixture of two phases along with an appropriate ratio could effectively hold back the abnormal grain growth as a result of rapid grain growth 20,21 . This explained why the average grain size of TiO 2 in our experiment was smaller than that reported by Lei et al 10 under similar conditions.…”
Section: Resultsmentioning
confidence: 44%
“…M iniaturization of dielectric resonators for volume efficiency in modern microwave telecommunication technology such as 3G, global positioning systems and wireless local area networks is a primary requirement. These dielectric resonators must satisfy three main criteria: a high dielectric constant for size miniaturization, a low dielectric loss for better selectivity, and a near‐zero temperature coefficient of resonant frequency (τ f ) for stable frequency stability 1 . However, high‐dielectric‐constant materials exhibit high dielectric loss (low Q × f value), whereas low‐loss ceramics are usually accompanied by a low ɛ r value.…”
Section: Introductionmentioning
confidence: 99%
“…However, high‐dielectric‐constant materials exhibit high dielectric loss (low Q × f value), whereas low‐loss ceramics are usually accompanied by a low ɛ r value. Achieving all three requirements in one material is a formidable problem and therefore a number of materials have been proposed 1–8 …”
Section: Introductionmentioning
confidence: 99%