High detectivity InGaN-GaN multiquantum well p-n junction photodiodes

Chiou, Yu−Zung; Su, Yan–Kuin; Chang, Shoou‐Jinn; Gong, Jeng; Lin, Yeong-Jyh; Liu, Sen-Hai; Chang, Chin Sung

doi:10.1109/jqe.2003.810262

Cited by 72 publications

(17 citation statements)

References 14 publications

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“…[126,127] Furthermore, these results showed a rapid response time (˂50 ms) from the island-structured perovskite PDs comparable to or faster than ZnO-and GaN-based semiconductor PDs. [128][129][130] The fast response speed was attributed to the "hopping-like" charge-transfer process. It was discussed that, upon light illumination, the density of excited charges will increase and the energy-barrier height between islands will decrease, which simplifies the charge tunneling and transport over the dark condition.…”

Section: Materials Design: Morphology Effectmentioning

confidence: 99%

A Review on Organic–Inorganic Halide Perovskite Photodetectors: Device Engineering and Fundamental Physics

2017

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The last eight years (2009-2017) have seen an explosive growth of interest in organic-inorganic halide perovskites in the research communities of photovoltaics and light-emitting diodes. In addition, recent advancements have demonstrated that this type of perovskite has a great potential in the technology of light-signal detection with a comparable performance to commercially available crystalline Si and III-V photodetectors. The contemporary growth of state-of-the-art multifunctional perovskites in the field of light-signal detection has benefited from its outstanding intrinsic optoelectronic properties, including photoinduced polarization, high drift mobilities, and effective charge collection, which are excellent for this application. Photoactive perovskite semiconductors combine effective light absorption, allowing detection of a wide range of electromagnetic waves from ultraviolet and visible, to the near-infrared region, with low-cost solution processability and good photon yield. This class of semiconductor might empower breakthrough photodetector technology in the field of imaging, optical communications, and biomedical sensing. Therefore, here, the focus is specifically on the critical understanding of materials synthesis, design, and engineering for the next-stage development of perovskite photodetectors and highlighting the current challenges in the field, which need to be further studied in the future.

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Section: Materials Design: Morphology Effectmentioning

confidence: 99%

A Review on Organic–Inorganic Halide Perovskite Photodetectors: Device Engineering and Fundamental Physics

2017

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“…[6] Furthermore, to obtain high crystalline quality, low-dimensional semiconductors have been applied in solar cells [7,8] and photovoltaic detectors. [9] Recently, quantum dots (QDs) have garnered extensive interest for applications in optoelectronic devices because of their strong zero-dimensional confinement effects with a δ -function density of states. [10][11][12] These characteristics make the QDs to form their distinct quasi-Fermi level and to restrict photo-generating carriers to the ground energy level.…”

Section: Introductionmentioning

confidence: 99%

Carrier transport in III–V quantum-dot structures for solar cells or photodetectors

Wang

Jiang

et al. 2016

Chinese Phys. B

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According to the well-established light-to-electricity conversion theory, resonant excited carriers in the quantum dots will relax to the ground states and cannot escape from the quantum dots to form photocurrent, which have been observed in quantum dots without a p-n junction at an external bias. Here, we experimentally observed more than 88% of the resonantly excited photo carriers escaping from InAs quantum dots embedded in a short-circuited p-n junction to form photocurrent. The phenomenon cannot be explained by thermionic emission, tunneling process, and intermediate-band theories. A new mechanism is suggested that the photo carriers escape directly from the quantum dots to form photocurrent rather than relax to the ground state of quantum dots induced by a p-n junction. The finding is important for understanding the low-dimensional semiconductor physics and applications in solar cells and photodiode detectors.

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“…The long fluorescence lifetime and high fluorescence efficiency of radiative recombination of CsPbBr 3 was suggested to contribute to this increased long lifetime weight. 55,56 Photodetectors can be clarified into different types according to their work principles, such as photodiodes (PN photodiodes, 57,58 PIN junction photodiodes, 59,60 avalanche photodiodes 61,62 ), and metal-semiconductor-metal photodetectors (MSM-PDs) 63 etc. Depending on the contact type, MSM-PDs can be divided into the ohmic-contact type (photoconductive type) and the Schottky-contact type.…”

Section: Resultsmentioning

confidence: 99%

Phase evolution and fluorescence stability of CsPb₂Br₅ microwires and their application in stable and sensitive photodetectors

Jiang

Wei

et al. 2023

J. Mater. Chem. C

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High detectivity InGaN-GaN multiquantum well p-n junction photodiodes

Cited by 72 publications

References 14 publications

A Review on Organic–Inorganic Halide Perovskite Photodetectors: Device Engineering and Fundamental Physics

A Review on Organic–Inorganic Halide Perovskite Photodetectors: Device Engineering and Fundamental Physics

Carrier transport in III–V quantum-dot structures for solar cells or photodetectors

Phase evolution and fluorescence stability of CsPb₂Br₅ microwires and their application in stable and sensitive photodetectors

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High detectivity InGaN-GaN multiquantum well p-n junction photodiodes

Cited by 72 publications

References 14 publications

A Review on Organic–Inorganic Halide Perovskite Photodetectors: Device Engineering and Fundamental Physics

A Review on Organic–Inorganic Halide Perovskite Photodetectors: Device Engineering and Fundamental Physics

Carrier transport in III–V quantum-dot structures for solar cells or photodetectors

Phase evolution and fluorescence stability of CsPb2Br5 microwires and their application in stable and sensitive photodetectors

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Phase evolution and fluorescence stability of CsPb₂Br₅ microwires and their application in stable and sensitive photodetectors