High detectivity InAs quantum dot infrared photodetectors

Kim, Eui‐Tae; Madhukar, A.; Ye, Zhengmao; Campbell, Joe C.

doi:10.1063/1.1719259

Cited by 197 publications

(119 citation statements)

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“…High detectivity has been reported for DWELL IPs in the LWIR region, 7 and focal plane arrays have been realized with a low noise equivalent temperature difference. 6 However, a proper design of the DWELL structure is necessary in order to fully gain the predicted advantages of QD based IPs.…”

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confidence: 99%

“…5 In order to enable tailoring of the detection wavelength in the LWIR detection region, a new class of QD based detectors, so-called quantum dots-in-a-well ͑DWELL͒ IPs, have been developed. [6][7][8] In these detectors, a transition from the QD ground state to a final state in the surrounding quantum well ͑QW͒ and subsequent tunneling out of the well result in a photocurrent. DWELL IPs offer an extended tunability of the detection wavelength through adjustment of the size and composition of both the QW and QDs.…”

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confidence: 99%

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Bias and temperature dependence of the escape processes in quantum dots-in-a-well infrared photodetectors

Höglund

Holtz

Pettersson

et al. 2008

Applied Physics Letters

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The performance of quantum dots-in-a-well infrared photodetectors (DWELL IPs) has been studied by means of interband and intersubband photocurrent measurements as well as dark current measurements. Using interband photocurrent measurements, substantial escape of electrons from lower lying states in the DWELL structure at large biases was revealed. Furthermore, a significant variation in the escape probability from energy states in the DWELL structure with applied bias was observed. These facts can explain the strong temperature and bias dependence of both photocurrent and dark currents in DWELL IPs.Original Publication:Linda Höglund, Per-Olof Holtz, H. Pettersson, C. Asplund, Q. Wang, S. Almqvist, S. Smuk, E. Petrini and J. Y. Andersson, Bias and temperature dependence of the escape processes in quantum dots-in-a-well infrared photodetectors, 2008, Applied Physics Letters, (93), 103501.http://dx.doi.org/10.1063/1.2977757Copyright: American Institute of Physicshttp://www.aip.org

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confidence: 99%

Bias and temperature dependence of the escape processes in quantum dots-in-a-well infrared photodetectors

Höglund

Holtz

Pettersson

et al. 2008

Applied Physics Letters

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“…Until today much research effort has been spent on QDIPs in order to achieve a device performance similar to QWIPs but at significantly higher temperatures. Notable success has been achieved in the meantime by several groups [5][6][7][8][9][10][11]28]. The most important approach to increase the detectivity, is the introduction of barriers in order to decrease the darkcurrent and/or to place the quantum dots (QDs) inside a quantum well (QW), these are the so called dot in a well (DWELL) structures [14].…”

Section: Introductionmentioning

confidence: 99%

Injector Quantum Dot Molecule Infrared Photodetector: A Concept for Efficient Carrier Injection

Gebhard

2011

Nano-Micro Lett.

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Quantum dot infrared photodetectors are expected to be a competitive technology at high operation temperatures in the long and very long wavelength infrared spectral range. Despite the fact that they already achieved notable success, the performance suffers from the thermionic emission of electrons from the quantum dots at elevated temperatures resulting in a decreasing responsivity. In order to provide an efficient carrier injection at high temperatures, quantum dot infrared photodetectors can be separated into two parts: an injection part and a detection part, so that each part can be separately optimized. In order to integrate such functionality into a device, a new class of quantum dot infrared photodetectors using quantum dot molecules will be introduced. In addition to a general discussion simulation results suggest a possibility to realize such a device.

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“…Quantum dot infrared photodetectors have been identified as an emerging technology for this wavelength regime due to their low dark current leading to a potentially higher operating temperature and normal incidence operation based on a mature GaAs technology. [1][2][3][4][5] Presently, high performance midinfrared detectors are based on mercury cadmium telluride ͑MCT͒. Due to a dramatic change of the band gap as a function of material composition, it is very challenging to reproducibly obtain large area homogeneous materials suitable for large area focal plane arrays ͑FPA͒ based on this material system.…”

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confidence: 99%

“…10,11 QDIPs with low dark current densities and high operating temperature have been reported. 2,3 Asymmetrically designed DWELL detectors have also been shown to have a biasdependent spectral response that is suitable for multispectral imagery. 12 Recently, a two color 320ϫ 256 FPA, based on a voltage-tunable InAs/ InGaAs/ GaAs DWELL structure has also been demonstrated.…”

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Nanoscale quantum dot infrared sensors with photonic crystal cavity

Posani

Tripathi

Annamalai

et al. 2006

Applied Physics Letters

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We report high performance infrared sensors that are based on intersubband transitions in nanoscale self-assembled quantum dots combined with a microcavity resonator made with a high-index-contrast two-dimensional photonic crystal. The addition of the photonic crystal cavity increases the photocurrent, conversion efficiency, and the signal to noise ratio ͑represented by the specific detectivity D * ͒ by more than an order of magnitude. The conversion efficiency of the detector at V b = −2.6 V increased from 7.5% for the control sample to 95% in the PhC detector. In principle, these photonic crystal resonators are technology agnostic and can be directly integrated into the manufacturing of present day infrared sensors using existing lithographic tools in the fabrication facility. © 2006 American Institute of Physics. ͓DOI: 10.1063/1.2194167͔ Infrared sensors in the wavelength range of 3 -25 m are of immense technological importance due to their application in medical diagnostics, fire-fighting equipment, and night vision systems. Quantum dot infrared photodetectors have been identified as an emerging technology for this wavelength regime due to their low dark current leading to a potentially higher operating temperature and normal incidence operation based on a mature GaAs technology. [1][2][3][4][5] Presently, high performance midinfrared detectors are based on mercury cadmium telluride ͑MCT͒. Due to a dramatic change of the band gap as a function of material composition, it is very challenging to reproducibly obtain large area homogeneous materials suitable for large area focal plane arrays ͑FPA͒ based on this material system. In contrast, mature materials growth technologies for III-V semiconductors can provide very accurate control of compositions and homogeneity. Therefore there is interest in developing IR photodetectors using III-V materials. One of the most promising III-V semiconductor long wavelenght infrared ͑LWIR͒ detectors is the quantum well infrared photodetector ͑QWIP͒, 6-9 which employs the intersubband or the subbandto-continuum transitions in quantum wells. One of the drawbacks of n-type QWIPs is that they cannot detect normally incident light due to the restriction of selection rules for the optical transition. In contrast, the intersubband optical transitions in quantum dots ͑QDs͒ do not have that restriction, due to the three-dimensional quantum confinement. Theoretically, quantum dot infrared photodetectors ͑QDIPs͒ and quantum dot-in well ͑DWELL͒ detectors ͑which is a combination of a quantum dot and quantum well detector͒ offer several advantages over QWIPs, including lower dark current ͑hence higher T operation͒, higher responsivity, normal incidence detection, and improved radiation hardness. 10,11 QDIPs with low dark current densities and high operating temperature have been reported. 2,3 Asymmetrically designed DWELL detectors have also been shown to have a biasdependent spectral response that is suitable for multispectral imagery. 12 Recently, a two color 320ϫ 256 FPA, based on a volt...

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High detectivity InAs quantum dot infrared photodetectors

Cited by 197 publications

References 18 publications

Bias and temperature dependence of the escape processes in quantum dots-in-a-well infrared photodetectors

Bias and temperature dependence of the escape processes in quantum dots-in-a-well infrared photodetectors

Injector Quantum Dot Molecule Infrared Photodetector: A Concept for Efficient Carrier Injection

Nanoscale quantum dot infrared sensors with photonic crystal cavity

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