High-detectivity (>1*10/sup 10/ cm square root Hz/W), InAsSb strained-layer superlattice, photovoltaic infrared detector

The growth parameter influence on the crystal quality of InAsSb grown on GaAs by molecular beam epitaxy

“…InAs x Sb 1Àx ternary alloy as devices are operating at wavelengths in the 3-5 and 8-12 mm windows where the atmospheric absorption is minimum [5][6][7][8]. However, it is difficult to growth high-quality InAs x Sb 1Àx epilayer due to lack of proper substrate.…”

Growth, Properties and Infrared Device Characteristics of Strained InAsSb-Based Materials

“…High detectivities (> lxl0 10 cm Hz ll2 lW) were demonstrated for this InAsSb SLS photodiode at 77 K for wavelengths ~ 10 !lm [36]. The zerobias, external current responsivity of the SLS photodiode is shown in Fig.…”

“…As an alternative to TIl-V based, photoconductive quantum-well-intersubband-photodetectors (QWIPs), these novel characteristics of InAsSb SLSs led to several demonstrations of photodiodes for 10 !lm, with normal incidence light. InAsSb photodiodes were grown by either MBE [35,36] or MOCVD [37]. However, due to lower background doping levels, the MBE-grown diodes demonstrated larger resistance-area products (RaA-) and subsequently, higher detectivities.…”

Epitaxial growth and characterization of InAs/GaSb and InAs/InAsSb type-II superlattices on GaSb substrates by metalorganic chemical vapor deposition for long wavelength infrared photodetectors

“…So far, the III-Sb-based T2SL structures and devices have been predominantly grown by MBE, especially in the InAs/GaSb material system [2,6,7,[9][10][11]13]. It is of great benefit if these structures can be produced by metalorganic chemical vapor deposition (MOCVD), which could enable lower-cost and higher-yield production of IR photodetectors.…”

“…One is to use InSb/InAsSb strained T2SLs on InSb substrates [7,8], which show high detectivity with a cut-off wavelength of l$10 mm. However, due to a large tensile strain and a thick absorption layer, the detector epitaxial structure has to be grown on a strain-relief buffer layer, which could introduce defects and thus limit the device performance characteristics.…”