High-Density Wafer-Scale 3-D Silicon-Photonic Integrated Circuits

Zhang, Yu; Ling, Yi‐Chun; Zhang, Yichi; Shang, Kuanping; Yoo, S. J. B.

doi:10.1109/jstqe.2018.2827784

Cited by 33 publications

(13 citation statements)

References 30 publications

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“…As schematically illustrated in Fig. 7a-b, an integrated silicon photonics OPA-LiDAR consists of several parts: the light source; a device (usually an MMI or a star coupler [99], [101]- [102]) used to split the beam into the several emitting elements; phase shifters (thermal or electro-optical), to introduce different phase delays to the signals in the antennas, and therefore to achieve the steering of the emitted beam into a specific direction ( Fig. 7c-d); the antennas themselves, usually in the form of gratings or edge or end-fire couplers [103]- [104].…”

Section: B Opa-lidar Componentsmentioning

confidence: 99%

A Review and Perspective on Optical Phased Array for Automotive LiDAR

Hsu

Solano-Rivas

et al. 2021

IEEE J. Select. Topics Quantum Electron.

173

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Section: B Opa-lidar Componentsmentioning

confidence: 99%

A Review and Perspective on Optical Phased Array for Automotive LiDAR

Hsu

Solano-Rivas

et al. 2021

IEEE J. Select. Topics Quantum Electron.

173

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“…Through lateral/perpendicular tapers, the transition to 220-nm-thick silicon waveguides with negligible loss was made by P. Dong et al [55]. A high-density wafer-scale 3D silicon-photonic integrated circuit was proposed by Zhang Y. et al [56] with a SiN (silicon-nitrogen) core thickness of 100 nm, in which the power variation between the ports was less than 0.1 dB. The summary of 3D PICS structures above is showed in Table 3.…”

Section: (A) (B)mentioning

confidence: 99%

“…Lower power variation. [56] The interposer testing E-fuse, a new test framework, was proposed based on the plug-in structure of integrated circuit test.…”

Section: Research Content Conclusion Referencementioning

confidence: 99%

TSV Technology and High-Energy Heavy Ions Radiation Impact Review

Tian

Liu

2018

Electronics

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Three-dimensional integrated circuits (3D IC) based on TSV (Through Silicon Via) technology is the latest packaging technology with the smallest size and quality. As a result, it can effectively reduce parasitic effects, improve work efficiency, reduce the power consumption of the chip, and so on. TSV-based silicon interposers have been applied in the ground environment. In order to meet the miniaturization, high performance and low-cost requirements of aerospace equipment, the adapter substrate is a better choice. However, the transfer substrate, as an important part of 3D integrated circuits, may accumulate charge due to heavy ion irradiation and further reduce the performance of the entire chip package in harsh space radiation environment or cause it to fail completely. Little research has been carried out until now. This article summarizes the research methods and conclusions of the research on silicon interposers and TSV technology in recent years, as well as the influence of high-energy heavy ions on semiconductor devices. Based on this, a series of research methods to study the effect of high-energy heavy ions on TSV and silicon adapter plates is proposed.Electronics 2018, 7, 112 2 of 29 wafer was invented by M.G Smith et al. [2], which opposite surfaces were connected ohmically to the degenerately doped portions to be electrically connected along the thru-connection. With further research and exploration, 2.5D/3D integration technology with TSV realized integrated circuits with advantages of high interconnection density, high performance, low power consumption, and low cost [3,4]. In addition, the core is widely considered to be the leading technology in the field of high density packaging in the future and is an effective way to break through Moore's Law [5][6][7]. Figure 1. Silicon interposer through electrical copper coating technology production: (a) The construction of through-silicon via on the wafer; (b) The dry film etchant is stuck on the wafer, then exposed and etched; (c) Hole plating and pad fabrication by electroplating methods; (d) The photoresist removing. Adapted with permission from [27], Copyright Elsevier, 2016.

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“…3D photonic integrated circuits (PICs) are key to overcome intrinsic limitations in 2D PICs and push optical systems toward low-power consumption and high-density functionalities in a 3D integrated photonic chip. [1][2][3] In conventional 2D PICs, where all devices reside in the same plane, microring resonators are the main building blocks for various on-chip photonic and functionality such as opto-plasmonic coupling, [24] out-of-plane directional control of light emission, [25] microcavity-based spin-orbit coupling, [26] or even optofluidic detection in lab-ina-tube systems. [27] Intriguingly, such vertical ring resonators are compatible with on-chip monolithic integration if manufactured by rolled-up nanotechnology.…”

Section: Introductionmentioning

confidence: 99%

Selective Out‐of‐Plane Optical Coupling between Vertical and Planar Microrings in a 3D Configuration

Valligatla

Wang

Madani

et al. 2020

Advanced Optical Materials

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optoelectronic systems, [4] serving as optical filters, [5] modulators, [6] and frequency comb generators, [7] to name a few. Furthermore, micro/nanoresonator coupling in one plane has been widely investigated [8-13] for applications such as wavelength division multiplexing, [14] sensing, [15] and lasing modulation. [16] In recent years, various schemes have been proposed to conquer the third dimension, such as laser inscription of 3D waveguide circuits, [17] interlayer grating couplers for vertical integration of multiple photonic components, [18-20] and photonic routing architectures based on multiple waveguides for out-of-plane light coupling. [21] However, these schemes mainly rely on simple passive light transfer components, which do not use the 3D space efficiently. For highdensity 3D photonic integration, a new approach is required to not only transfer light from layer to layer but also to fill the space in between the layers with photonic functionalities such as flexible reorientation of light propagation and wavelength-selective transfer between different layers. In contrast to planar ring resonators, a microtube optical ring resonator is able to support out-of-plane whispering gallery modes (WGM) in the vertical direction, [22,23] therefore providing a concept to also exploit the vertical direction with additional 3D photonic integrated circuits are expected to play a key role in future optoelectronics with efficient signal transfer between photonic layers. Here, the optical coupling of tubular microcavities, supporting resonances in a vertical plane, with planar microrings, accommodating in-plane resonances, is explored. In such a 3D coupled composite system with largely mismatched cavity sizes, periodic mode splitting and resonant mode shifts are observed due to mode-selective interactions. The axial direction of the microtube cavity provides additional design freedom for selective mode coupling, which is achieved by carefully adjusting the axial displacement between the microtube and the microring. The spectral anticrossing behavior is caused by strong coupling in this composite optical system and is excellently reproduced by numerical modeling. Interfacing tubular microcavities with planar microrings is a promising approach toward interlayer light transfer with added optical functionality in 3D photonic systems.

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High-Density Wafer-Scale 3-D Silicon-Photonic Integrated Circuits

Cited by 33 publications

References 30 publications

A Review and Perspective on Optical Phased Array for Automotive LiDAR

A Review and Perspective on Optical Phased Array for Automotive LiDAR

TSV Technology and High-Energy Heavy Ions Radiation Impact Review

Selective Out‐of‐Plane Optical Coupling between Vertical and Planar Microrings in a 3D Configuration

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