High-density very efficient magnetic film memory arrays

Pohm, A.V.; Wang, Jish-Min; Lee, F.; Schnasse, W.; Smay, T. A.

doi:10.1109/tmag.1969.1066424

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1970

1972

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Cited by 10 publications

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“…The memory cell operation, using a sense line and a word line and sensing the change in magnetic flux, is similar to the operation of memory cells previously described. A high density experimental multilayer film memory was described by Pohm et al which showed promising possibilities for magnetic thin film memories [11].…”

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confidence: 99%

An investigation of the switching threshold of multilayer thin film magneto-resistive memory elements

Waite

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Section: Please Notementioning

confidence: 99%

An investigation of the switching threshold of multilayer thin film magneto-resistive memory elements

Waite

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Orientamenti tecnologici per gli elaboratori di dati

Filippazzi

Minnaja

1970

Riv. Nuovo Cim.

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Role of Thin Intermediate Layers between Polycrystalline Copper and Magnetic Films

Crowther

Frongillo

1971

Journal of Applied Physics

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It is well known that magnetic films deposited on evaporated copper on a glass substrate have wall coercive forces Hc much larger than those directly deposited on glass. This is due in part to the surface roughness of the large copper crystallites. This work demonstrates that there is a significant additional contribution to Hc due to stress in a material in which λ100≠λ111 even though λs=0. Electron-microscopy crystallite-size measurements suggest this stress arises from epitaxial growth. This stress can be relieved by stripping the films from the glass and selectively etching away the copper. For example, a 600-Å nonmagnetostrictive film evaporated from a 50 Co 47 Ni 3 Fe melt on a freshly evaporated 1-μ evaporated copper film on a 200°C glass substrate had a Hc of 72 Oe. After this film was stripped and the copper was etched away, Hc was reduced to 35 Oe. For a companion film deposited directly on glass Hc = 13 Oe. Several materials evaporated as thin (∼100 Å) intermediate layers which successfully inhibit epitaxial growth and stress include Cr, Mn, Ti, and Pt.

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High-density very efficient magnetic film memory arrays

Cited by 10 publications

References 12 publications

An investigation of the switching threshold of multilayer thin film magneto-resistive memory elements

An investigation of the switching threshold of multilayer thin film magneto-resistive memory elements

Orientamenti tecnologici per gli elaboratori di dati

Role of Thin Intermediate Layers between Polycrystalline Copper and Magnetic Films

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