High-density transition layer in oxynitride interfaces on Si(100)

Wang, J.; Lee, D. R.; Park, C.; Jeong, Y. H.; Lee, K.-B.; Park, Yong Joon; Youn, S. B.; Park, J.-C.; Choi, HM; Huh, Yun-Jun

doi:10.1063/1.125452

Cited by 4 publications

(1 citation statement)

References 18 publications

(10 reference statements)

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Based on our XRR results we also found that a 1-2 nm interfacial layer with a density of ∼2.5-2.9 g cm −3 was also formed at the SRON-SiO 2 interlayer interface. High-density interfacial layers have also been observed in the XRR curves of nitrided SiO 2 thin film on Si wafers [33]. We also observed in these XRR results that the thickness of the film annealed at 850 • C decreased by ∼16%, and the density of the annealed film increased by ∼14%.…”

Section: Discussionsupporting

confidence: 73%

Nanocrystal formation in annealed a-SiO_0.17N_0.07:H films

et al. 2004

View full text Add to dashboard Cite

Silicon nanocrystals have been fabricated by annealing amorphous hydrogenated silicon-rich oxynitride (SRON) films in vacuum for 4 h over the temperature range 850–1150 °C. X-ray photoelectron spectroscopy confirmed the composition of the film to be SiO0.17N0.07. Glancing angle x-ray diffraction results revealed consistent silicon crystallite sizes of nm for films annealed at temperatures , increasing to nm for films annealed at 1150 °C. The room temperature photoluminescence spectra of the samples annealed at 850 and 950 °C comprised luminescent peaks from silicon nanocrystals and luminescence from the defects in Si–O system. However, only peaks from defects in Si–O system were present in the luminescence spectra from samples annealed at temperatures greater than 950 °C. For the samples annealed at 850 and 950 °C, the presence of strong Si–N bonds prevented the coalescence of smaller silicon crystallites into larger crystallites. Larger, non-luminescent silicon crystallites were only formed in films annealed at temperatures greater than 950 °C, where the energetics of coalescing particles overcame the strong Si–N bonding in SRON films. High-resolution transmission electron microscopy analysis confirmed the presence of silicon nanocrystallites. A proposed growth mechanism of silicon nanocrystals is discussed.

show abstract

Section: Discussionsupporting

confidence: 73%

Nanocrystal formation in annealed a-SiO_0.17N_0.07:H films

et al. 2004

View full text Add to dashboard Cite

show abstract

Structural and chemical characterization of 4.0 nm thick oxynitride films

Banerjee

Gibaud

Chateigner

et al. 2002

Journal of Applied Physics

View full text Add to dashboard Cite

We report x-ray reflectivity and secondary ion mass spectrometry (SIMS) analysis of several silicon oxynitride films of 4.0 nm thick as a function of nitrogen concentration at the interface between the oxide and the Si substrate. The x-ray reflectivity data have been analyzed using a model-dependent matrix method, and the results were compared with the model-independent method based on the distorted wave Born approximation and Fourier inversion refinement technique based on the Born approximation. Limitation of each of these techniques is also discussed. The x-ray reflectivity analysis of the films reveals the existence of high electron density at the region where nitrogen accumulation has been observed. Nitrogen accumulation has been observed using dual-beam time-of-flight-SIMS. The results of x-ray reflectivity have been compared with the results of SIMS.

show abstract

Layering of ultrathin SiO2 film and study of its growth kinetics

Gayathri

Banerjee

2004

Applied Physics Letters

View full text Add to dashboard Cite

A systematic kinetic study of SiO2 thin film thermally grown on Si(100) substrate by a single step and two step dry oxidation process is presented. Films grown at lower temperature (750°C) show higher density than films grown at higher temperature (1000°C). If the oxidation is carried out in two steps i.e., the first oxidation step at a lower temperature (750°C) and the second one at a higher temperature (1000°C), two distinct layers of SiO2 having different densities can be obtained. The film density was measured using the grazing incidence x-ray reflectivity technique. We also observed that when the thickness of the first “top” layer increases the growth of the “bottom” layer is retarded leading to lowering of total thickness of the SiO2 film even though the total oxidation time is increased.

show abstract

High-density transition layer in oxynitride interfaces on Si(100)

Abstract: Articles you may be interested inAn atomic model of the nitrous-oxide-nitrided SiO 2 / Si interface

Cited by 4 publications

References 18 publications

Nanocrystal formation in annealed a-SiO_0.17N_0.07:H films

Nanocrystal formation in annealed a-SiO_0.17N_0.07:H films

Structural and chemical characterization of 4.0 nm thick oxynitride films

Layering of ultrathin SiO2 film and study of its growth kinetics

Contact Info

Product

Resources

About

High-density transition layer in oxynitride interfaces on Si(100)

Abstract: Articles you may be interested inAn atomic model of the nitrous-oxide-nitrided SiO 2 / Si interface

Cited by 4 publications

References 18 publications

Nanocrystal formation in annealed a-SiO0.17N0.07:H films

Nanocrystal formation in annealed a-SiO0.17N0.07:H films

Structural and chemical characterization of 4.0 nm thick oxynitride films

Layering of ultrathin SiO2 film and study of its growth kinetics

Contact Info

Product

Resources

About

Nanocrystal formation in annealed a-SiO_0.17N_0.07:H films

Nanocrystal formation in annealed a-SiO_0.17N_0.07:H films