High-density switchable skyrmion-like polar nanodomains integrated on silicon

Han, Lu; Addiego, Christopher; Prokhorenko, Sergei; Wang, Meiyu; Fu, Hanyu; Nahas, Yousra; Yan, Xingxu; Cai, Songhua; Wei, Tianqi; Fang, Yanhan; Liu, Huazhan; Ji, Dianxiang; Guo, Wei; Gu, Zheng‐Bin; Yang, Yurong; Wang, Peng; Bellaïche, L.; Chen, Yan‐Feng; Wu, Di; Nie, Yuefeng; Pan, Xiaoqing

doi:10.1038/s41586-021-04338-w

Cited by 88 publications

(59 citation statements)

References 57 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…more than 200 gigabits per square inch). Moreover, these polar nanostructures were found to show switchable, reversible, and non-volatile resistive behavior with two orders of magnitude change in the conductivity of the core of the nanodomains, between 'on' and 'off' states [187].…”

Section: Cmos and Flexible Integrated Devicesmentioning

confidence: 99%

Freestanding complex-oxide membranes

Pesquera

Fernández

Khestanova

et al. 2022

J. Phys.: Condens. Matter

View full text Add to dashboard Cite

Complex oxides show a vast range of functional responses, unparalleled within the inorganic solids realm, making them promising materials for applications as varied as next-generation field-effect transistors, spintronics, electro-optic modulators, pyroelectric detectors, or oxygen reduction catalysts. Their stability in ambient conditions, chemical versatility, and large susceptibility to minute structural and electronic modifications make them ideal subjects of study to discover emergent phenomena and to generate novel functionalities for next-generation devices. Recent advances in the synthesis of single-crystal, freestanding complex oxide membranes provide an unprecedented opportunity to study these materials in a nearly-ideal system (e.g., free of mechanical/thermal interaction with substrates) as well as expanding the range of tools for tweaking their order parameters (i.e., (anti-)ferromagnetic, (anti-)ferroelectric, ferroelastic), and increasing the possibility of achieving novel heterointegration approaches (including interfacing dissimilar materials) by avoiding the chemical, structural, or thermal constraints in synthesis processes. Here, we review the recent developments in the fabrication and characterization of complex-oxide membranes and discuss their potential for unraveling novel physicochemical phenomena at the nanoscale and for futher exploiting their functionalities in technologically relevant devices.

show abstract

Section: Cmos and Flexible Integrated Devicesmentioning

confidence: 99%

Freestanding complex-oxide membranes

Pesquera

Fernández

Khestanova

et al. 2022

J. Phys.: Condens. Matter

View full text Add to dashboard Cite

show abstract

“…Subsequently, the sacrificial buffer layer is dissolved by selective etching to release the freestanding ferroelectric oxide film. Finally, the freestanding thin films can be transferred to flexible substrates, such as polyethylene terephthalate [75,108] or polydimethylsiloxane (PDMS) [61,105,[109][110][111] . They can also be transferred to silicon (Si) substrates and combined with Si-based electronics.…”

Section: Direct Growthmentioning

confidence: 99%

Design of super-elastic freestanding ferroelectric thin films guided by phase-field simulations

Guo¹,

Huang²

2022

Microstructures

View full text Add to dashboard Cite

Understanding the dynamic behavior of domain structures is critical to the design and application of super-elastic freestanding ferroelectric thin films. Phase-field simulations represent a powerful tool for observing, exploring and revealing the domain-switching behavior and phase transitions in ferroelectric materials at the mesoscopic scale. This review summarizes the recent theoretical progress regarding phase-field methods in freestanding ferroelectric thin films and novel buckling-induced wrinkled and helical structures. Furthermore, the strong coupling relationship between strain and ferroelectric polarization in super-elastic ferroelectric nanostructures is confirmed and discussed, resulting in new design strategies for the strain engineering of freestanding ferroelectric thin film systems. Finally, to further promote the innovative development and application of freestanding ferroelectric thin film systems, this review provides a summary and outlook on the theoretical modeling of freestanding ferroelectric thin films.

show abstract

“…Electromechanical properties of functional materials play a significant role in electronic devices 1 , 2 . For perovskite oxides with unique electromechanical functionalities, strain engineering can stimulate significant electronic phenomena 3 – 5 , such as inducing polarization in the nonpolar material SrTiO 3 and attaining a record-high polarization value in PbTiO 3 6 , 7 . In contrast to a homogenous strain, a strain gradient is inversely proportional to the spatial scale and can increase by seven orders of magnitude when the system shrinks from macroscale (~1/m) to nanoscale (10 7 /m) 8 .…”

Section: Introductionmentioning

confidence: 99%

Enhanced polarization and abnormal flexural deformation in bent freestanding perovskite oxides

Cai

Lun

et al. 2022

Nat Commun

Self Cite

View full text Add to dashboard Cite

Recent realizations of ultrathin freestanding perovskite oxides offer a unique platform to probe novel properties in two-dimensional oxides. Here, we observe a giant flexoelectric response in freestanding BiFeO3 and SrTiO3 in their bent state arising from strain gradients up to 3.5 × 107 m−1, suggesting a promising approach for realizing ultra-large polarizations. Additionally, a substantial change in membrane thickness is discovered in bent freestanding BiFeO3, which implies an unusual bending-expansion/shrinkage effect in the ferroelectric membrane that has never been seen before in crystalline materials. Our theoretical model reveals that this unprecedented flexural deformation within the membrane is attributable to a flexoelectricity–piezoelectricity interplay. The finding unveils intriguing nanoscale electromechanical properties and provides guidance for their practical applications in flexible nanoelectromechanical systems.

show abstract

High-density switchable skyrmion-like polar nanodomains integrated on silicon

Abstract: How to cite:Please refer to published version for the most recent bibliographic citation information. If a published version is known of, the repository item page linked to above, will contain details on accessing it.

Cited by 88 publications

References 57 publications

Freestanding complex-oxide membranes

Freestanding complex-oxide membranes

Design of super-elastic freestanding ferroelectric thin films guided by phase-field simulations

Enhanced polarization and abnormal flexural deformation in bent freestanding perovskite oxides

Contact Info

Product

Resources

About