Abstract:Cross-point memory architecture involves high-density,
fast yet
cost-effective storage class memories (SCM). As a result, ovonic threshold
switches (OTS) are extensively researched as they are needed in series
with the SCM-based memory element for its precise functioning. In
addition, these OTS-based devices exhibit the potential to be self-selecting
memories too. Hence, its integration-friendly patterning becomes pivotal
for large-scale manufacturing. Chalcogenide-based alloys are often
the desired candidate … Show more
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