High Density Microbump Development for Multi-Project Wafer (Mpw) Die

Hollowell, Andrew E; Matthew, Jordan,; Gutierrez, Jordan E.; Mcclain, Jaime; Nordquist, Christopher; Michael, Christopher; Wood, Michael; Young, Andrew Ian

doi:10.1115/1.0003562v

Cited by 1 publication

(1 citation statement)

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“…One specific challenge with individual die is that lithography and microfabrication processes are not practical on small die, making deposition of patterned underbump metal and solder barriers difficult on MPW die. To address this challenge, we have been developing and using vendor processes for electroless deposition of barrier layers onto the AlCu pads (with Cu content ≤1%) commonly used on Si CMOS ICs (38)(39)(40).…”

Section: Heterogeneous Integration Approachesmentioning

confidence: 99%

(Invited) Heterogeneous Integration of Silicon CMOS Electronics and Compound Semiconductor Electronics for Miniature RF Photonic Transceivers

Nordquist¹,

Skogen²,

Fortuna³

et al. 2020

ECS Trans.

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Heterogeneous Integration (HI) may enable optoelectronic transceivers for short-range and long-range radio frequency (RF) photonic interconnect using wavelength-division multiplexing (WDM) to aggregate RF signals, provide galvanic isolation, and reduce crosstalk and interference. Integration of silicon Complementary Metal-Oxide-Semiconductor (CMOS) electronics with InGaAsP compound semiconductor photonics provides the potential for high-performance microsystems that combine complex electronic functions with optoelectronic capabilities from rich bandgap engineering opportunities, and intimate integration allows short interconnects for lower power and latency. The dominant pure-play foundry model plus the differences in materials and processes between these technologies dictate separate fabrication of the devices followed by integration of individual die, presenting unique challenges in die preparation, metallization, and bumping, especially as interconnect densities increase. In this paper, we will describe progress towards realizing an S-band WDM RF photonic link combining 180 nm silicon CMOS electronics with InGaAsP integrated optoelectronics, using HI processes and approaches that scale into microwave and millimeter-wave frequencies.

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Section: Heterogeneous Integration Approachesmentioning

confidence: 99%