High-density inductively coupled plasma chemical vapor deposition of silicon nitride for solar cell application

Parm, I.O.; Kim, K; Lim, Dong-Gun; Lee, J.H; Heo, Jeongmin; Kim, J; Kim, D.S; Lee, S.H; Yi, Junsin

doi:10.1016/s0927-0248(02)00053-3

Cited by 26 publications

(7 citation statements)

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“…2) at around 400 • C as the substrate temperature. 14 Therefore, we presumed that our SiN:H film contained hydrogen more than 4 × 10 21 atoms/cm 3 , because our SiN:H film was fabricated using NH 3 instead of N 2 . Note that the amount of hydrogen in SiN:F was successfully reduced to 1/10 of conventional SiN:H by changing the source gas.…”

Section: Resultsmentioning

confidence: 99%

The Influence of Fluorinated Silicon Nitride Gate Insulator on Positive Bias Stability toward Highly Reliable Amorphous InGaZnO Thin-Film Transistors

Yamazaki¹,

Ishikawa²,

Fujii³

et al. 2013

ECS J. Solid State Sci. Technol.

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For gate insulator of amorphous InGaZnO thin-film transistor, we fabricated fluorinated silicon nitride (SiN:F) film formed by an inductively-coupled plasma enhanced chemical vapor deposition method by utilizing SiF4/N2 as source gases. Threshold voltage shift against electrical stress was successfully suppressed. Chemical analysis revealed that the hydrogen concentration was reduced to 1/10 of conventional SiN film and fluorine was introduced into the interface between the SiN:F film and channel layer. We conclude that the decrease of hydrogen content and introduction of fluorine lead to decrease of electron trap density at the interface and/or the SiN:F film.

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Section: Resultsmentioning

confidence: 99%

The Influence of Fluorinated Silicon Nitride Gate Insulator on Positive Bias Stability toward Highly Reliable Amorphous InGaZnO Thin-Film Transistors

Yamazaki¹,

Ishikawa²,

Fujii³

et al. 2013

ECS J. Solid State Sci. Technol.

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“…Although much of the attention in the development of SiN x layers for high performance solar cells has been focused on the optimization of the two roles as an ARC and a passivation layer [9][10][11][12][13][14] it is only recently that the inter-relatedness of these two functions has been elucidated. Jung et al 15 performed a comprehensive study of band gap and defect effects in amorphous silicon nitride (a-SiN x ), indicating the important role of these effects in determining the efficiency of a solar cell.…”

Section: Introductionmentioning

confidence: 99%

Molecular dynamics studies of the bonding properties of amorphous silicon nitride coatings on crystalline silicon

Butler

Lamers

Weeber

et al. 2011

Journal of Applied Physics

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In this paper we present molecular dynamics simulations of silicon nitride, both in bulk and as an interface to crystalline silicon. We investigate, in particular, the bonding structure of the silicon nitride and analyze the simulations to search for defective geometries which have been identified as potential charge carrier traps when silicon nitride forms an interface with silicon semiconductors. The simulations reveal how the bonding patterns in silicon nitride are dependent upon the stoichiometry of the system. Furthermore we demonstrate how having an "interphase", where the nitrogen content in silicon gradually reduces towards pure silicon across a boundary region, as opposed to an interface where there is an abrupt drop in nitrogen concentration at the boundary, can result in significantly different numbers of certain important carrier trap

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“…Interference effects, which also frequently occur when a thin layer of oil on water forms rainbow-like bands of color, are another type of coating in addition to anti-reflection coatings as sunlight hits the solar cell's front, incident energy from the surface is transported into the solar cell and converted into electricity. The reflectivity of the bare silicone surface is usually very high [16][17][18][19][20][21][22][23][24][25][26][27][28][29][30]. It is possible to reflect more than 30% of the incident sunlight.…”

Section: Introductionmentioning

confidence: 99%

“…The incident light will reflect between the sloped surfaces, strengthening the interaction between the incident light and the semiconductor surface. The second layer is protected by a single or multi-layer antireflective coating [24][25][26][27][28][29][30][31][32][33][34][35][36][37][38][39][40]. These coatings are typically very thin, with an optical thickness of about one-quarter to one-half the incident wavelength.…”

Section: Introductionmentioning

confidence: 99%

Numerical Exploration and Statistical Analysis of Mathematical Parameters of Anti Reflecting Coating on Operational Parameters Improvement of Solar Cell

Sunil Kumar Chaudhary, Vineeta Chauhan

2024

cana

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In this research, a detailed abacus adventure and statistic obsession are made to survey the relation of fractions of materials of the anti-reflective coating to effectiveness of a solar cell. Emphasis on the study of whether single or double-layer layers of coatings save energy reflection and improve absorption is done leading to energy conservation. The anti-reflective coating is a familiar term in the solar technology, as it is less realistic without the coating that minimizes the light reflection losses. By way of single or double coating, light transmission increased is by limiting reflection therefore making the surfaces of solar cells to receive more light improving efficiency. These finer details of the coating's power over the solar cells' light absorption depth and output effectiveness are thoughtfully and minutely deliberated. A great deal of numerical methods are used to model light and sunlight impinging on the coated solar cell environments. Light waves' behaviour, when meet an antireflection layer, is a very important aspect in explaining, to some extent, about the thickness of the layer and its materials composition. That is a great role, namely, statistical techniques in this study whose purpose is used to main performance gain in the solar cells. Through simulation and experimental data, correlations are established between solar cell performance and the coating’s parameters. The patterns found will be taken into consideration to further improve the coating. This research, not just performed steps by step analysis of reflection, absorption and power conversion features in solar cells coated; rather, guidelines to excellent anti-reflective coating were offered too. The clarification of complex connections between the performance of coating construction and solar cells performance is enabled in this research and its results significantly contribute towards the development of renewable energy engineering, hence giving the research a certain weight in the field of solar energy.

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High-density inductively coupled plasma chemical vapor deposition of silicon nitride for solar cell application

Cited by 26 publications

References 0 publications

The Influence of Fluorinated Silicon Nitride Gate Insulator on Positive Bias Stability toward Highly Reliable Amorphous InGaZnO Thin-Film Transistors

The Influence of Fluorinated Silicon Nitride Gate Insulator on Positive Bias Stability toward Highly Reliable Amorphous InGaZnO Thin-Film Transistors

Molecular dynamics studies of the bonding properties of amorphous silicon nitride coatings on crystalline silicon

Numerical Exploration and Statistical Analysis of Mathematical Parameters of Anti Reflecting Coating on Operational Parameters Improvement of Solar Cell

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