High density InAlAs/GaAlAs quantum dots for non-linear optics in microcavities

Kuszelewicz, R.; Benoit, Jean‐Michel; Barbay, Sylvain; Lemaı̂tre, A.; Patriarche, G.; Meunier, K.; Tierno, A.; Ackemann, T.

doi:10.1063/1.3682466

Cited by 8 publications

(7 citation statements)

References 21 publications

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“…This is confirmed by calculations (Fig. 22b) where absorption was modified as [From [42]] From data at high transmission (see Fig. 23), a rather precise measurement of the free spectral range as 15.6 GHz or 0.52cm −1 wavenumbers allowed to calculate the group index, incorporating the modal and spectral contributions to dispersion.…”

Section: Group Index Measurementmentioning

confidence: 56%

“…Hence, we are addressing in this chapter the room temperature, cw nonlinear optics of QDs. We review and give further details on a series of papers on modeling the complex nonlinear susceptibility of QD and more recently on the experimental observation of absorptive nonlinearities [22,23,24,25,41,42]. Sec.…”

Section: Introductionmentioning

confidence: 99%

“…The single mode size calculated with a finite element program (ALCOR) is 3.0 × 0.250 µm 2 . [Adapted from[42]] Photoluminescence spectrum of the InAlAs/GaAlAs QD used in the experiment at different excitation levels.…”

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confidence: 99%

“…Transmission spectrum at high intensities with saturated absorption at constant intracavity intensity around 787 nm. [From[42]]…”

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confidence: 99%

“…The inset displays the same data in the form 1/α = f (P inc ) the linear dependence assesses a saturation law of the absorption. [Adapted from[42]]…”

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confidence: 99%

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Quantum Dot Devices

Wang¹

2012

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The nonlinear optical response of self-assembled quantum dots is relevant to the application of quantum dot based devices in nonlinear optics, all-optical switching, slow light and self-organization. Theoretical investigations are based on numerical simulations of a spatially and spectrally resolved rate equation model, which takes into account the strong coupling of the quantum dots to the carrier reservoir created by the wetting layer states. The complex dielectric susceptibility of the ground state is obtained. The saturation is shown to follow a behavior in between the one for a dominantly homogeneously and inhomogeneously broadened medium. Approaches to extract the nonlinear refractive index change by fringe shifts in a cavity or self-lensing are discussed. Experimental work on saturation characteristic of InGa/GaAs quantum dots close to the telecommunication O-band (1.24-1.28 µm) and of InAlAs/GaAlAs quantum dots at 780 nm is described and the first demonstra

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Section: Group Index Measurementmentioning

confidence: 56%

Section: Introductionmentioning

confidence: 99%

mentioning

confidence: 99%

“…Transmission spectrum at high intensities with saturated absorption at constant intracavity intensity around 787 nm. [From[42]]…”

mentioning

confidence: 99%

“…The inset displays the same data in the form 1/α = f (P inc ) the linear dependence assesses a saturation law of the absorption. [Adapted from[42]]…”

mentioning

confidence: 99%

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