High-density (4.4F/sup 2/) NAND flash technology using Super-Shallow Channel Profile (SSCP) engineering

Arai, F.; Arai, Norihisa; Satoh, S.; Yaegashi, T.; Kamiya, Eiji; Matsunaga, Y.; Takeuchi, Yoshinori; Kamata, Hiroshi; Shimizu, Ayumi; Ohtami, N.; Kai, N.; Takahashi, Sadao; Moriyama, W.; Kugimiya, K.; Miyazaki, S.; Hirose, Takahisa; Meguro, H.; Hatakeyama, K.; Shimizu, Kazuhiro; Shirota, R.

doi:10.1109/iedm.2000.904432

Cited by 6 publications

(3 citation statements)

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“…Recently, a Flash memory cell size of 4.4F 2 (where F is the minimum feature size) [3] has been achieved. However, further scaling of Flash memory cells in planar technology is becoming increasingly difficult due to various concerns, such as problems and issues related to punch through, reliability, process windows, read current, and isolation requirements between cells.…”

Section: Introductionmentioning

confidence: 99%

A novel tri-control gate surrounding gate transistor (TCG-SGT) nonvolatile memory cell for flash memory

Ohba

Nakamura

Sakuraba³

et al. 2006

Solid-State Electronics

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Section: Introductionmentioning

confidence: 99%

A novel tri-control gate surrounding gate transistor (TCG-SGT) nonvolatile memory cell for flash memory

Ohba

Nakamura

Sakuraba³

et al. 2006

Solid-State Electronics

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“…Several memory cells with small cell sizes have been developed to reduce the bit cost (1,2). For these memories, the difficulty of increasing programming throughput is one of the major concerns, especially for downloading music at kiosk terminals.…”

Section: Introductionmentioning

confidence: 99%

A giga-scale assist-gate (AG)-AND-type flash memory cell with 20-MB/s programming throughput for content-downloading applications

Kobayashi

Sasago²,

Kurata³

et al.

International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224)

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We propose a new AND-type flash memory cell with an assist gate (AG), which has achieved a 20-MB/s programming throughput.For high-speed parallel programming on the order of kilobytes, fast cell programming (10 p) and an extremely low channel current ( I d s s 100 nA/cell) are necessary. These features were achieved by using the low current source-side injection method in which the AG was used as a program gate. The memory cell size has also been reduced to 0.104 pm2 by taking advantage of an AG using field isolation and a selfaligned floating gate. These technologies are the keys to giga-scale flash memories, of which the main application is content downloading.

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“…For overhead reduction, it is very effective to increase the number of cells in a string [2]. However, it suffers from much decreased "ON" cell current in the read operation and more increased program disturbances.…”

Section: Introductionmentioning

confidence: 99%

Highly manufacturable 1 Gb NAND flash using 0.12 μm process technology

Choi

Cho²,

Yim³

et al.

International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224)

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An 1 Gb NAND flash memory has been successfully developed by integrating new technologies, inverse narrowwidth effect (INWE) suppression scheme, 32-cell NAND flash combined with the scaling-down of tunnel oxide, inter-poly ONO, and gate poly re-oxidation.It is implemented using KrF photolithography along with a resolution enhancing technique, the planarized surface by etch-back and CMP processes, highly selective cqntact etching and nonoverlapped dual damascene metallization.Thus, for the first time, an 1 Gb NAND flash memory with mass-producible chip size of 132 mm2, lower Vcc operation below 1.8 V and lower power consumption, has been obtained.

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High-density (4.4F/sup 2/) NAND flash technology using Super-Shallow Channel Profile (SSCP) engineering

Cited by 6 publications

References 0 publications

A novel tri-control gate surrounding gate transistor (TCG-SGT) nonvolatile memory cell for flash memory

A novel tri-control gate surrounding gate transistor (TCG-SGT) nonvolatile memory cell for flash memory

A giga-scale assist-gate (AG)-AND-type flash memory cell with 20-MB/s programming throughput for content-downloading applications

Highly manufacturable 1 Gb NAND flash using 0.12 μm process technology

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