2020 IEEE International Electron Devices Meeting (IEDM) 2020
DOI: 10.1109/iedm13553.2020.9372019
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High-Density 3D Monolithically Integrated Multiple 1T1R Multi-Level-Cell for Neural Networks

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Cited by 35 publications
(25 citation statements)
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“…The authors claim that this makes the structure suitable for multiple deep learning applications and showed high degrees of inference accuracy within 0.01% of ideal values. However, statistical cell-to-cell variability limits the maximum number of levels because of the overlap between adjacent resistance distributions [118], and OxRAM resistance relaxation after programming leads to overlap of the memory states, which can alter the circuit reliability [119].…”
Section: Analog Deep Learning Acceleratormentioning
confidence: 99%
“…The authors claim that this makes the structure suitable for multiple deep learning applications and showed high degrees of inference accuracy within 0.01% of ideal values. However, statistical cell-to-cell variability limits the maximum number of levels because of the overlap between adjacent resistance distributions [118], and OxRAM resistance relaxation after programming leads to overlap of the memory states, which can alter the circuit reliability [119].…”
Section: Analog Deep Learning Acceleratormentioning
confidence: 99%
“…The process of transferring the high-precision software weights to the conductance states of the devices in the array was achieved using an iterative closed-loop multilevel programming algorithm. It is based on adapting the SET programming compliance current to obtain a conductance within a target range 24 and programming a device until its conductance falls within a pre-defined margin of tolerated error. Such an approach allows each device to be programmed with ten non-overlapping conductance levels.…”
Section: Mosaic Rsnn Hardware-software Simulationmentioning
confidence: 99%
“…Resistive Random Access Memory (RRAM) devices, otherwise referred to as memristors, have emerged as a promising memory element for such in-memory crossbar architectures [18][19][20][21][22][23] . They can be programmed with multiple discrete conductance levels 24 corresponding to different synaptic weight values in the connectivity matrix of Fig. 1c.…”
Section: Introductionmentioning
confidence: 99%
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“…The CDs will then encode the angular position of the target. consumption [23][24][25][26][27][28][29] . Their inherent non-volatility -not requiring active power consumption to store or refresh the information -matches the asynchronous event-driven nature of neuromorphic computation perfectly, resulting in virtually no power consumption when the system is idle.…”
Section: Introductionmentioning
confidence: 99%