2009
DOI: 10.1016/j.sse.2009.09.034
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High density 3D memory architecture based on the resistive switching effect

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Cited by 155 publications
(107 citation statements)
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“…As memory elements may be integrated into BEOL, RRAM technology is of particular interest for high density storage with possibly multi-levels threedimensional architectures (Fig. 6a) [33,34]. Nevertheless, it has to be stressed out that from a memory cell and array design point of view, unipolar operations are preferred over bipolar operations.…”
Section: Phase Change Memories Pcmmentioning
confidence: 99%
“…As memory elements may be integrated into BEOL, RRAM technology is of particular interest for high density storage with possibly multi-levels threedimensional architectures (Fig. 6a) [33,34]. Nevertheless, it has to be stressed out that from a memory cell and array design point of view, unipolar operations are preferred over bipolar operations.…”
Section: Phase Change Memories Pcmmentioning
confidence: 99%
“…The research is diverted into two directions; one aims to improve the architecture of the device, i.e. 3-D devices [36] ; the other focuses on multilevel programming of the cell itself [37]. Russo et.…”
Section: Current Developments In the Fieldmentioning
confidence: 99%
“…have been carried out both in academia and industry [3][4][5][6][7][8][9][10]. Among them, simple crossbar array architecture has been one of strong candidates for promising neuromorphic architectures, because crossbar architecture can be made with high density and low cost [11].…”
Section: Introductionmentioning
confidence: 99%
“…Since the first prediction of memristors, they have been thought as potential candidate that can mimic various synaptic functions of biological neural systems [12]. This is because memristors can be integrated with 3-D array that may be as dense as neuronal array in human brains [11]. In addition, memristors that can store analog values are useful in representing synaptic weights to emulate synaptic plasticity [12].…”
Section: Introductionmentioning
confidence: 99%