2017 11th European Conference on Antennas and Propagation (EUCAP) 2017
DOI: 10.23919/eucap.2017.7928160
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High data-rate communication link at 240 GHz with on-chip antenna-integrated transmitter and receiver modules in SiGe HBT technology

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Cited by 15 publications
(9 citation statements)
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“…Recently, a new standard has been established by the IEEE [1], emerging from the THz wireless communications research that has been very intensive these past years [2]. Many technologies offer interesting features for THz communications, for example, III-V electronics can offer long-distance links [3], silicon germanium electronics are growing very fast for radar and communications applications [4]. Also, resonant tunnelling diodes devices have shown good performances for short-range links [5].…”
mentioning
confidence: 99%
“…Recently, a new standard has been established by the IEEE [1], emerging from the THz wireless communications research that has been very intensive these past years [2]. Many technologies offer interesting features for THz communications, for example, III-V electronics can offer long-distance links [3], silicon germanium electronics are growing very fast for radar and communications applications [4]. Also, resonant tunnelling diodes devices have shown good performances for short-range links [5].…”
mentioning
confidence: 99%
“…Few standalone AoCs have also been proposed. Third, the gain of a large proportion of the MM-Wave AoCs is low except the AoCs of [77]- [79] because of the use of the Si lens, and of [80] due to the use of high-resistivity substrate. This degraded gain pushes the need for the use of gain enhancement methods for these AoCs.…”
Section: A Applications In Mm-wave Bandmentioning
confidence: 99%
“…As far as the technology is concerned, Silicon (Si) based technologies (Complementary Metal Oxide Semiconductor (CMOS) and Silicon Germanium (SiGe) Bipolar CMOS (BiCMOS)) have become an attractive choice for the AoC's design nowadays because of their variety of benefits such as reduced cost, small chip-size, low power, high integration level, and the accessibility to several processes. Moreover, the unity-gain frequency (f t ) and unity-power-gain frequency (f max ) of MOS transistors have now been pushed well beyond 300 GHz in some SiGe CMOS processes [79], thus enabling the realization of AoCs design for MM-Wave and THz applications. In fact, the value of f max for the MOS transistors has now reached up-to 570 GHz [30], which is achieved by integrating the Infinion's 130 nm process with the IHP's advanced SiGe HBT module with an elevated extrinsic base and non selective epitaxial-bases deposition [31].…”
Section: Introductionmentioning
confidence: 99%
“…In these days, as ever-increasing demand on the required operational bandwidth due to the limited throughput of wireless link with current 5G mm-Wave frequency bands [1], sub-terahertz (sub-THz) and THz frequency bands are getting increasingly more focus and promising for future THz wireless systems with more than 100 Gbps or even one Tbps achievable date rate [2] [3]. Antenna implementation on traditional mm-Wave domain allows the use of System-on-package (SoP) solutions in which the the antenna elements are achieved by using low-loss microwave substrates and connected to RFIC modules through a certain feeding network and interconnects e.g.…”
Section: Introductionmentioning
confidence: 99%