2022
DOI: 10.1016/j.nanoen.2021.106667
|View full text |Cite
|
Sign up to set email alerts
|

High current output direct-current triboelectric nanogenerator based on organic semiconductor heterojunction

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1
1
1
1

Citation Types

0
31
0
1

Year Published

2022
2022
2023
2023

Publication Types

Select...
7

Relationship

0
7

Authors

Journals

citations
Cited by 38 publications
(33 citation statements)
references
References 25 publications
0
31
0
1
Order By: Relevance
“…The tribovoltaic effect, as a new semiconductor effect, is significantly promising for achieving breakthroughs in high-power mechanical-energy harvesters, leading to new energy technology innovations and promoting the emerging field of tribotronics. [16,18,32,33,35,36,38] b) APD per Hz of this work compared with that of all previous TENG reported by others. [11,12,[39][40][41][42][43]…”
Section: Application and Prospect Of The Sdc-teng To Drive Electronic...mentioning
confidence: 56%
See 2 more Smart Citations
“…The tribovoltaic effect, as a new semiconductor effect, is significantly promising for achieving breakthroughs in high-power mechanical-energy harvesters, leading to new energy technology innovations and promoting the emerging field of tribotronics. [16,18,32,33,35,36,38] b) APD per Hz of this work compared with that of all previous TENG reported by others. [11,12,[39][40][41][42][43]…”
Section: Application and Prospect Of The Sdc-teng To Drive Electronic...mentioning
confidence: 56%
“…a) PPD of this work compared with that of different centimeter‐scale SDC‐TENG reported by others. [ 16,18,32,33,35,36,38 ] b) APD per Hz of this work compared with that of all previous TENG reported by others. [ 11,12,39–43 ] c–f) The comparison of open‐circuit voltage (c), short‐circuit current (d), APD (e), and capacitor charging voltage (f) between the FEP‐based TENG and pBi 2 Te 3 –nGaN heterojunction SDC‐TENG.…”
Section: Resultsmentioning
confidence: 78%
See 1 more Smart Citation
“…4a). 99 The proposed TENG achieved an open-circuit voltage of 1 V and a short-circuit current of 309 μA. Its internal resistance was measured to be 208 Ω, and the power density reached up to 11.67 mW m −2 .…”
Section: Harvesting Human Mechanical Energy With Tengs For Power Supplymentioning
confidence: 94%
“…(d) Voltage, current density and power density outputs of the PEDOT:PSS/Al TENG at various external load resistances. Reproduced with permission from ref . Copyright 2022 Elsevier.…”
Section: Metal–semiconductor Tengmentioning
confidence: 99%