High-Current-Gain Direct-Growth GaN/InGaN Double Heterojunction Bipolar Transistors

Lee, Yi‐Che; Zhang, Yun; Kim, Hee‐Jin; Choi, Suk Soon; Lochner, Zachary; Dupuis, R. D.; Ryou, Jae‐Hyun; Shen, Shyh‐Chiang

doi:10.1109/ted.2010.2064316

Cited by 25 publications

(14 citation statements)

References 22 publications

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“…In our previous report, we demonstrated a high breakdown voltage over of 1000 V with a diode of 60 μm in diameter with an FP structure, and its leakage current was below 10 −9 A until reaching the breakdown voltage [3]. Even in larger diodes (100 and 200 μm in diameter) with FPs, the breakdown voltage was over 800 V. The specific ON-resistance was high, however, due to plasma damage to the p + -GaN layer surface during the sputtering process of a SiO 2 insulating layer, which was done before the ohmic contact process [4]- [6]. Afterward, R on was reduced using a low-damage insulating film (spin-on glass) process.…”

Section: Introductionmentioning

confidence: 99%

Over 3.0 $\hbox{GW/cm}^{2}$ Figure-of-Merit GaN p-n Junction Diodes on Free-Standing GaN Substrates

Hatakeyama

Nomoto

Kaneda

et al. 2011

IEEE Electron Device Lett.

117

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This letter describes a new two-step electrode process on p-GaN and characteristics of GaN p-n junction diodes on free-standing GaN substrates with low specific ON-resistance R on and high breakdown voltage V B . We develop a two-step process for anode electrodes in order to avoid plasma damage to the p + -GaN contact layer during the sputtering process. The specific ON-resistance is further improved due to a new low-damage process. The breakdown voltage of the diodes with the field-plate (FP) structure is over 1100 V, and the leakage current was low, i.e., in the range of 10 −9 A. The specific ON-resistance of the diodes of 50 μm in diameter with the FP structure was 0.4 mΩ · cm 2 . Baliga's figure of merit (V 2 B /R on ) of 3.0 GW/cm 2 is obtained. These are the best values ever reported among those achieved by GaN p-n junction diodes on free-standing GaN substrates.Index Terms-Breakdown voltage, gallium nitride, power semiconductor devices.

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Section: Introductionmentioning

confidence: 99%

Over 3.0 $\hbox{GW/cm}^{2}$ Figure-of-Merit GaN p-n Junction Diodes on Free-Standing GaN Substrates

Hatakeyama

Nomoto

Kaneda

et al. 2011

IEEE Electron Device Lett.

117

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“…In contrast, EPR should work effectively in the case of zero‐offset GaN n–p–n BJTs , whose base doping level is limited to the order of 10 17 cm −3 in terms of emitter injection efficiency. Although heterojunction bipolar transistors (HBTs) with heavy base doping can increase emitter injection efficiency, the reported large collector‐emitter offset voltages (even with the use of graded emitter‐base junction) should limit the use of HBTs in power electronics applications. As described in the previous section, the lateral extension of EPR in p‐type GaN was determined to be about 10 µm from the edge of the p‐type electrode.…”

Section: Vertical Gan Bipolar Power Devicesmentioning

confidence: 99%

Vertical GaN bipolar devices: Gaining competitive advantage from photon recycling

Mochizuki

2016

Physica Status Solidi (a)

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It is shown that peripheral current Ip flows in non‐self‐aligned mesa‐type p–n diodes but that Ip flowing in GaN diodes cannot be explained by elongated minority‐carrier lifetime associated with intrinsic photon recycling (IPR), i.e., reabsorption of radiative recombination. Accordingly, possible increase in the ratio of deep Mg acceptors (energy level: EA) due to extrinsic photon recycling (EPR) is proposed, and the effect of EPR is expressed as an effective EA. Due to the limit on the power dissipation of a semiconductor package, EPR works effectively in the case of zero‐offset bipolar‐junction transistors, whose base doping level is limited in terms of emitter‐injection efficiency. Measured and simulated forward‐current–voltage characteristics of non‐self‐aligned mesa‐type GaN p–n diodes.

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“…After the device burn-in, the maximum differential current gain (h fe =ΔI C /ΔI B ) of a DHBT with A E = 20×20 µm 2 is 105 [22]. Figure 1 shows the Gummel plot of a 20×20 µm 2 device with V CB = 0 V. β reaches the peak value of 84 at V BE = 12 V and I C = 7.5 mA.…”

Section: Layer Structures and Fabricationmentioning

confidence: 99%

High‐performance GaN/InGaN double heterojunction bipolar transistors with power density >240 kW/cm²

Zhang

Lee

Lochner

et al. 2011

Phys. Status Solidi C

Self Cite

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We report GaN/In0.03Ga0.97N npn double heterojunction bipolar transistors (DHBTs) grown on sapphire substrates for high power applications. High current gain and high power density are obtained using a simple single‐growth mesa etching process. A device with an emitter area (AE) of 20×20 µm2 achieves a peak d.c. current gain (β) of 84, a maximum collector current density (JC) of 7.2 kA/cm2 and a maximum power density > 240 kW/cm2. A large‐area (AE = 12163 μm2) multi‐finger device also shows a peak β = 30, maximum collector current (Ic) = 200 mA and maximum d.c. power = 3.76 W. These values are among the best for the reported III‐N HBTs to date (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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High-Current-Gain Direct-Growth GaN/InGaN Double Heterojunction Bipolar Transistors

Cited by 25 publications

References 22 publications

Over 3.0 $\hbox{GW/cm}^{2}$ Figure-of-Merit GaN p-n Junction Diodes on Free-Standing GaN Substrates

Over 3.0 $\hbox{GW/cm}^{2}$ Figure-of-Merit GaN p-n Junction Diodes on Free-Standing GaN Substrates

Vertical GaN bipolar devices: Gaining competitive advantage from photon recycling

High‐performance GaN/InGaN double heterojunction bipolar transistors with power density >240 kW/cm²

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High-Current-Gain Direct-Growth GaN/InGaN Double Heterojunction Bipolar Transistors

Cited by 25 publications

References 22 publications

Over 3.0 $\hbox{GW/cm}^{2}$ Figure-of-Merit GaN p-n Junction Diodes on Free-Standing GaN Substrates

Over 3.0 $\hbox{GW/cm}^{2}$ Figure-of-Merit GaN p-n Junction Diodes on Free-Standing GaN Substrates

Vertical GaN bipolar devices: Gaining competitive advantage from photon recycling

High‐performance GaN/InGaN double heterojunction bipolar transistors with power density >240 kW/cm2

Contact Info

Product

Resources

About

High‐performance GaN/InGaN double heterojunction bipolar transistors with power density >240 kW/cm²