High Current and Linearity AlGaN/GaN/-Graded-AlGaN:Si-doped/GaN Heterostructure for Low Voltage Power Amplifier Application

Yu, Qian; Shi, Chunzhou; Yang, Ling; Lu, Hao; Zhang, Meng; Wu, Mei; Hou, Bin; Jia, Fuchun; Guo, Fei; Ma, Xiaohua

doi:10.1109/led.2023.3241763

Cited by 12 publications

(6 citation statements)

References 32 publications

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“…As shown in Fig. 20, a GaN HEMT was fabricated on the epitaxial structure with a 1.5 nm AlN insertion layer to form a closely coupled double channel by Song et al [117] . The balanced electron distribution between the upper and lower channels effectively alleviates the influence of the optical scattering under the high electric field, which is useful for the g m flatness.…”

Section: Double Channelmentioning

confidence: 99%

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A review on GaN HEMTs: nonlinear mechanisms and improvement methods

Du,

Ye,

Cai

et al. 2023

J. Semicond.

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The GaN HEMT is a potential candidate for RF applications due to the high frequency and large power handling capability. To ensure the quality of the communication signal, linearity is a key parameter during the system design. However, the GaN HEMT usually suffers from the nonlinearity problems induced by the nonlinear parasitic capacitance, transconductance, channel transconductance etc. Among them, the transconductance reduction is the main contributor for the nonlinearity and is mostly attributed to the scattering effect, the increasing resistance of access region, the self-heating effect and the trapping effects. Based on the mechanisms, device-level improvement methods of transconductance including the trapping suppression, the nanowire channel, the graded channel, the double channel, the transconductance compensation and the new material structures have been proposed recently. The features of each method are reviewed and compared to provide an overview perspective on the linearity of the GaN HEMT at the device level.

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Section: Double Channelmentioning

confidence: 99%

“…20. (Color online) Cross-sectional schematic of the double-channel HEMT on the GaN on high-resistivity silicon [117] . (black curve) is lowered [30] .…”

Section: Othersmentioning

confidence: 99%

A review on GaN HEMTs: nonlinear mechanisms and improvement methods

Du,

Ye,

Cai

et al. 2023

J. Semicond.

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“…Gallium nitride(GaN) high electron mobility transistor (HEMT) has been studied over the last decade in consideration of high power and high frequency electronic applications [ 1 , 2 , 3 , 4 , 5 , 6 , 7 , 8 , 9 ]. Recently, GaN HEMT with ferroelectric insulated gate have attracted a large number of attentions.…”

Section: Introductionmentioning

confidence: 99%

A Comparative Study on the Degradation Behaviors of Ferroelectric Gate GaN HEMT with PZT and PZT/Al2O3 Gate Stacks

Chen,

Lu,

et al. 2024

Micromachines

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In this paper, the degradation behaviors of the ferroelectric gate Gallium nitride (GaN) high electron mobility transistor (HEMT) under positive gate bias stress are discussed. Devices with a gate dielectric that consists of pure Pb(Zr,Ti)O3 (PZT) and a composite PZT/Al2O3 bilayer are studied. Two different mechanisms, charge trapping and generation of traps, both contribute to the degradation. We have observed positive threshold voltage shift in both kinds of devices under positive gate bias stress. In the devices with a PZT gate oxide, we have found the degradation is owing to electron trapping in pre-existing oxide traps. However, the degradation is caused by electron trapping in pre-existing oxide traps and the generation of traps for the devices with a composite PZT/Al2O3 gate oxide. Owing to the large difference in dielectric constants between PZT and Al2O3, the strong electric field in the Al2O3 interlayer makes PZT/Al2O3 GaN HEMT easier to degrade. In addition, the ferroelectricity in PZT enhances the electric field in Al2O3 interlayer and leads to more severe degradation. According to this study, it is worth noting that the reliability problem of the ferroelectric gate GaN HEMT may be more severe than the conventional metal–insulator–semiconductor HEMT (MIS-HEMT).

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“…Besides ensuring normally-OFF, it is also desirable to have lower parasitic capacitances and higher transconductance to achieve a high operating frequency and faster speed for highpower RF applications. Despite numerous research efforts aimed at enhancing the high-power RF performance [20][21][22], high parasitic capacitance and low transconductance continue to be critical limiting factors that constrain the cutoff frequency. In order to counter these issues, several studies have reported an improvement in high-frequency performance using methods such as the T-shaped gate design, asymmetric doped channel, nanomembranes, high electron mobility transistor (HEMTs), and split-gate design [20][21][22] on various materials.…”

Section: Introductionmentioning

confidence: 99%

Design of a novel split-recessed-gate β-Ga₂O₃ MOSFET-based maximum-gain microwave amplifier

Goyal,

Patel,

Kaur

2024

J. Phys. D: Appl. Phys.

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In this study, a split recessed gate Ga2O3 MOSFET has been proposed for high frequency applications. Extensive simulations have been carried out using TCAD Silvaco to examine analog characteristics as well as critical high-frequency metrics of the proposed device. A comparison has been drawn with conventional recessed gate β – Ga2O3 MOSFET and it is demonstrated that the proposed device outperforms the conventional device in terms of high frequency metrics due to significantly lower parasitic capacitances and higher intrinsic gain. In addition to this, it has also been demonstrated that proposed device exhibits a substantial increase of 127.7 % in Johnson’s figure of merit, significantly higher i.e., 134.7 % higher Baliga’s high frequency figure of merit as well as 3.25 % increase in Baliga’s figure of merit as compared to conventional device.Furthermore, two port network analysis has been carried out for both the devices and it has been shown that the proposed device offers higher gain with a slight trade-off in the reflections at input/output ports. The scattering parameters have also been extracted and used to perform the stability analysis. It has been observed that the proposed device exhibits higher stability for the entire frequency range. Further, a maximum gain amplifier has been designed using the proposed device. An impressive gain of 11.04 dB has been demonstrated at an ultra-high frequency of 3 GHz.

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High Current and Linearity AlGaN/GaN/-Graded-AlGaN:Si-doped/GaN Heterostructure for Low Voltage Power Amplifier Application

Cited by 12 publications

References 32 publications

A review on GaN HEMTs: nonlinear mechanisms and improvement methods

A review on GaN HEMTs: nonlinear mechanisms and improvement methods

A Comparative Study on the Degradation Behaviors of Ferroelectric Gate GaN HEMT with PZT and PZT/Al2O3 Gate Stacks

Design of a novel split-recessed-gate β-Ga₂O₃ MOSFET-based maximum-gain microwave amplifier

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High Current and Linearity AlGaN/GaN/-Graded-AlGaN:Si-doped/GaN Heterostructure for Low Voltage Power Amplifier Application

Cited by 12 publications

References 32 publications

A review on GaN HEMTs: nonlinear mechanisms and improvement methods

A review on GaN HEMTs: nonlinear mechanisms and improvement methods

A Comparative Study on the Degradation Behaviors of Ferroelectric Gate GaN HEMT with PZT and PZT/Al2O3 Gate Stacks

Design of a novel split-recessed-gate β-Ga2O3 MOSFET-based maximum-gain microwave amplifier

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Design of a novel split-recessed-gate β-Ga₂O₃ MOSFET-based maximum-gain microwave amplifier