High Crystallization of Perovskite Film by a Fast Electric Current Annealing Process

Abstract

High-efficiency organic-inorganic hybrid perovskite solar cells have experienced rapid development and attracted significant attention in recent years. Crystal growth as an important factor would significantly influence the quality of perovskite films and ultimately the device performance, which usually requires thermal annealing for 10 min or more. Herein, we demonstrate a new method to get high crystallization of perovskite film by electric current annealing for just 5 s. In contrast to conventional thermal annealing, a homogeneous perovskite film was formed with larger grains and fewer pinholes, leading to a better performance of the device with higher open-circuit voltage and fill factor. An average power conversion efficiency of 17.02% with electric current annealing was obtained, which is higher than that of devices with a conventional thermal annealing process (16.05%). This facile electric current annealing process with less energy loss and time consumption shows great potential in the industrial mass production of photovoltaic devices.

High-luminance perovskite light-emitting diodes with high-polarity alcohol solvent treating PEDOT:PSS as hole transport layer

“…The films have two strong and sharp diffraction peaks at 14.602 o and 29.845 o , corresponding to (100) and (200) planes, respectively. These two diffraction peaks are in good agreement with the previous report [ 27 , 28 ], which demonstrates that MAPbBr 3 crystals are highly oriented with a good cubic crystalline phase. To analyze the size of perovskite crystal, we can use Scherrer Equation as following: where L (nm) represents the crystallite size, K (0.89, spherical) represents the Scherrer constant, λ (0.154056 nm) represents the X-ray wavelength, B (rad) represents full width at half maximum of the XRD peak, and θ (rad) represents X-ray angle.…”

ZnO/SnO2 Double Electron Transport Layer Guides Improved Open Circuit Voltage for Highly Efficient CH3NH3PbI3-Based Planar Perovskite Solar Cells

“…34 After these, the gas-pumpdried film was baked on a hot plate at 100 °C for 10 min for the conventional thermal annealing method. 35 Spiro-OMeTAD solution, which is made by mixing 72.3 mg of Spiro-OMeTAD, 39 μL of TBP, and 20 μL of Li-TFSI solution (520 mg of Li-TFSI in 1 mL of acetonitrile) in 1 mL of chlorobenzene, was spin coated on the perovskite layer at 4000 rpm for 30 s. 17 All of the above processes were performed in an ambient atmosphere. Finally, a 100 nm Ag cathode was deposited by thermal evaporation at a pressure of <2.0 × 10 −3 Pa and an evaporation rate of <0.3 nm/s.…”

All-inorganic perovskite quantum dot light-emitting memories

“…1d), consistent with the distance between the (200) planes indexed in the XRD measurement. Notably, the dimensions of CsPbBr 3 QDs with high crystallization are similar to the grain size of the perovskite films produced by the precursor solution with postannealing treatment [26][27][28] , suggesting that the CsPbBr 3 QDs are suitable not only for the LEM device active layer, but also for many other perovskite optoelectronic devices 35,36 . A sharp emission peak centered at λ = 526 nm with a comparable photoluminescence (PL) intensity is observed in both the CsPbBr 3 QDs and PMMA/CsPbBr 3 QDs samples (Fig.…”

“…Here the CsPbBr 3 QDs are preferred than bulk perovskites for two reasons. First, in order to form the latter, either the perovskite precursor solution [26][27][28] or the mixed powers of PbBr 2 and CsBr [29][30][31] would need to be subject to a period of high temperature for facilitating the nucleation and crystallization of the bulk perovskites, but the heating process would introduce undesirable thermal stress to the underlying ITO and reduce the electrical conductivity of ITO 32,33 and degrade the overall LEM device performance (Supplementary Fig. 1).…”