High crystal quality wurtzite-zinc blende heterostructures in metal-organic vapor phase epitaxy-grown GaAs nanowires

Lehmann, Sebastian; Jacobsson, Daniel; Deppert, Knut; Dick, Kimberly A.

doi:10.1007/s12274-012-0232-3

Cited by 53 publications

(80 citation statements)

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“…nanodot, as observed by TEM and scanning electron microscopy (see ref 5. for structural characterization of this).…”

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confidence: 88%

“…16 We have developed a technique to produce nanowires containing exactly one polytype nanodot in GaAs with thickness control. 5 The tailored polytypic GaAs nanowires were seeded from Au aerosol particles and grown onto (111) oriented epiready GaAs substrates by metal organic vapor phase epitaxy in an AIX-TRON close-coupled showerhead machine at a set temperature of 580 • C, a reactor pressure of 100 mbar, and a total gas flow of 8 slm. Crystal structure control was achieved by using 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 was achieved by adjusting the growth times.…”

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confidence: 99%

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Confinement in Thickness-Controlled GaAs Polytype Nanodots

et al. 2015

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Polytype nanodots are arguably the simplest nanodots than can be made, but their technological control was, up to now, challenging. We have developed a technique to produce nanowires containing exactly one polytype nanodot in GaAs with thickness control. These nanodots have been investigated by photoluminescence, which has been cross-correlated with transmission electron microscopy. We find that short (4-20 nm) zincblende GaAs segments/dots in wurtzite GaAs confine electrons and that the inverse system confines holes. By varying the thickness of the nanodots we find strong quantum confinement effects which allows us to extract the effective mass of the carriers. The holes at the top of the valence band have an effective mass of approximately 0.45 m0 in wurtzite GaAs. The thinnest wurtzite nanodot corresponds to a twin plane in zincblende GaAs and gives efficient photoluminescence. It binds an exciton with a binding energy of roughly 50 meV, including central cell corrections.

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“…nanodot, as observed by TEM and scanning electron microscopy (see ref 5. for structural characterization of this).…”

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confidence: 88%

Section: Main Textmentioning

confidence: 99%

Confinement in Thickness-Controlled GaAs Polytype Nanodots

et al. 2015

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“…Верхняя граница для химических потенциалов является доста-точно резкой, т. е. вблизи µ max ННК растут либо в одной, либо в другой фазе [8][9][10][11][12][13]. Рост ННК вблизи нижней границы может происходить с образованием политипов [10,[13][14][15][16]. Для экспериментального наблю-дения химический потенциал лучше всего связывать со скоростью роста ННК.…”

Section: международный симпозиум "unclassified

XXI Международный симпозиум Нанофизика и наноэлектроника", Нижний Новгород, 13-16 марта 2017 г. Нитевидные нанокристаллы GaP/Si (111), синтезированные методом молекулярно-пучковой эпитаксии с переключением гексагональной и кубической фазy -=SUP=-*-=/SUP=-

Штром¹,

Сибирев²,

Убыйвовк³

et al. 2018

Физика И Техника Полупроводников

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A theoretical and experimental description of the synthesis of GaP nanowire crystals by molecularbeam epitaxy on Si(111) substrates with the use of gold as a catalyst is presented. The ratio between the fluxes of materials to be deposited and the substrate temperature are varied for a short time during nanowire synthesis in order to analyze the possibility of producing nanoinclusions of different polytypes. It is established that variations in the ratio between the fluxes of materials to be deposited and in the growth temperature bring about the controllable formation of inclusions, among them are structurally cubic crystalline regions. The inclusions are several nanometers thick.

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“…The growth conditions were optimized to achieved WZ GaAs NWs with a minimized number of stacking faults occurring along the ½000 " 1 1-type growth direction. Details of the growth parameters can be found elsewhere (Lehmann et al, 2012(Lehmann et al, , 2013. Au particles with a density of about 18 mm À2 and diameter of 80 nm serve as catalytic seeds to control the density and the diameter of the NWs.…”

Section: Sample Preparation and X-ray Diffraction Experimentsmentioning

confidence: 99%

“…Investigation of the scanning electron microscopy (SEM) images [see Fig. 1(a)] shows that a pyramidal base is formed at the bottom of every NW due to lateral overgrowth during the growth process which is a well known effect occurring under the conditions used (Lehmann et al, 2012). Careful adjustment of the growth and processing parameters allowed us to control both the density and the crystallographic phase of the NWs.…”

Section: Sample Preparation and X-ray Diffraction Experimentsmentioning

confidence: 99%

Characterization of individual stacking faults in a wurtzite GaAs nanowire by nanobeam X-ray diffraction

Davtyan

Lehmann

Kriegner

et al. 2017

J Synchrotron Radiat

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Coherent X-ray diffraction was used to measure the type, quantity and the relative distances between stacking faults along the growth direction of two individual wurtzite GaAs nanowires grown by metalorganic vapour epitaxy. The presented approach is based on the general property of the Patterson function, which is the autocorrelation of the electron density as well as the Fourier transformation of the diffracted intensity distribution of an object. Partial Patterson functions were extracted from the diffracted intensity measured along the ½000 " 1 1 direction in the vicinity of the wurtzite 00 " 1 1 " 5 5 Bragg peak. The maxima of the Patterson function encode both the distances between the fault planes and the type of the fault planes with the sensitivity of a single atomic bilayer. The positions of the fault planes are deduced from the positions and shapes of the maxima of the Patterson function and they are in excellent agreement with the positions found with transmission electron microscopy of the same nanowire.

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High crystal quality wurtzite-zinc blende heterostructures in metal-organic vapor phase epitaxy-grown GaAs nanowires

Cited by 53 publications

References 17 publications

Confinement in Thickness-Controlled GaAs Polytype Nanodots

Confinement in Thickness-Controlled GaAs Polytype Nanodots

Characterization of individual stacking faults in a wurtzite GaAs nanowire by nanobeam X-ray diffraction

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